# IEEE Microwave and Wireless Components Letters

## Filter Results

Displaying Results 1 - 22 of 22

Publication Year: 2009, Page(s): C1
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• ### IEEE Microwave and Wireless Components Letters publication information

Publication Year: 2009, Page(s): C2
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• ### Editorial

Publication Year: 2009, Page(s):1 - 2
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• ### Improved Accuracy Factors for the Nonuniform Fast Fourier Transform (NUFFT) Algorithm

Publication Year: 2009, Page(s):3 - 5
Cited by:  Papers (3)
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Based on the regular Fourier matrix, a new set of accuracy factors is proposed for the nonuniform fast Fourier transform algorithm to improve the accuracy of transformed data. It shows that the proposed factors can reduce the errors by three to more than ten times with almost the same number of arithmetic operations. Numerical examples are shown for the applications in computational electromagneti... View full abstract»

• ### Efficient High-Order Absorbing Boundary Condition for the ADI-FDTD Method

Publication Year: 2009, Page(s):6 - 8
Cited by:  Papers (3)
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In this letter, an efficient high-order absorbing boundary condition for the alternating-direction-implicit-finite-difference time-domain (ADI-FDTD) method is developed. The proposed high-order absorbing boundary condition (ABC) has very high numerical efficiency because it can keep the tri-diagonal matrix form during the ADI iteration. The absorbing performance of the proposed ABC is analyzed the... View full abstract»

• ### Full-Periphery Surface Impedance for Skin-Effect Approximation in Electric Field Integral Equation

Publication Year: 2009, Page(s):9 - 11
Cited by:  Papers (7)
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A new surface impedance model for RL-extraction in lossy two-dimensional (2-D) interconnects of rectangular cross section is presented. The model is derived directly from the volumetric electric field integral equation under the approximation of the unknown volumetric current density as a product of the exponential factor describing the skin-effect and the unknown surface current density on the co... View full abstract»

• ### Modeling Multiple Vias With Arbitrary Shape of Antipads and Pads in High Speed Interconnect Circuits

Publication Year: 2009, Page(s):12 - 14
Cited by:  Papers (28)
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This letter successfully extends the full-wave semi-analytical approach, based on Foldy-Lax multiple scattering equations and modal expansions, to solve massively-coupled multiple vias with arbitrary shape of antipads and pads in high speed interconnect circuits. The magnetic frill current at the antipad aperture is calculated using finite difference method. Numerical examples of as many as 16-by-... View full abstract»

• ### Reduction of Transient Far-End Crosstalk Voltage and Jitter in DIMM Connectors for DRAM Interface

Publication Year: 2009, Page(s):15 - 17
Cited by:  Papers (4)
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The transient far-end crosstalk voltage and the crosstalk-induced jitter of dual in-line memory module (DIMM) connectors are reduced by about 80% by increasing the mutual capacitance between DIMM connector pins with the additional interdigitated-comb-shaped metal-stub patterns on the motherboard. It was confirmed by the far-end crosstalk voltage waveform measurements using TDR and the eye diagram ... View full abstract»

• ### A Dual-Band Bandpass Filter Based on Generalized Negative-Refractive-Index Transmission-Lines

Publication Year: 2009, Page(s):18 - 20
Cited by:  Papers (28)  |  Patents (2)
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A dual-band bandpass filter is presented. The filter is composed of generalized negative-refractive-index transmission-lines (NRI-TL) realized in microstrip. The filtering mechanism relies on all four of the generalized NRI-TLs' left-handed and right-handed passbands. Under the closed stopband condition, two passbands are achieved. A complete design procedure is described. A fabricated example mea... View full abstract»

• ### Multilayer Dual-Mode Dual-Bandpass Filter

Publication Year: 2009, Page(s):21 - 23
Cited by:  Papers (37)
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A dual-mode dual-bandpass filter for the U-NII bands is proposed and demonstrated. Its effective size reduction is achieved by using a multilayer configuration. The first and the third layers incorporate microstrip dual-mode bandpass filters with operating center-frequencies of f1 =5.2 GHz and f2 =5.8 GHz, respectively. The second layer is used as a common ground plane for bo... View full abstract»

• ### A Wideband and High Rejection Multimode Bandpass Filter Using Stub Perturbation

Publication Year: 2009, Page(s):24 - 26
Cited by:  Papers (36)  |  Patents (1)
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A novel multimode bandpass filter with high and wide rejection band is proposed by using an open stub. The open-stub has two functions in the filter: (1) perturbation for the multimode operation and (2) zero point generation at the stopband for the stopband control. With proper input/output coupling, additional two poles, i.e., four poles, can be generated for the proposed filter structure. The de... View full abstract»

• ### Compact UWB Bandpass Filter With Improved Upper-Stopband Performance

Publication Year: 2009, Page(s):27 - 29
Cited by:  Papers (47)
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In this letter, a novel ultra-wideband (UWB) bandpass filter with compact size and improved upper-stopband performance has been studied and implemented using multiple-mode resonator (MMR). The MMR is formed by attaching three pairs of circular impedance-stepped stubs in shunt to a high impedance microstrip line. By simply adjusting the radius of the circles of the stubs, the resonant modes of the ... View full abstract»

• ### Compact Ultra-Wideband Bandpass Filter Using Dual-Line Coupling Structure

Publication Year: 2009, Page(s):30 - 32
Cited by:  Papers (56)
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This letter presents a novel compact ultra-wideband (UWB) microstrip bandpass filter with spurious response suppression. A dual-mode ring resonator is constituted to allocate its first two resonant frequencies in the UWB band, and the dual-line parallel-coupled structure is used in this compact UWB filter, which is expected to achieve much tighter coupling degree. Simulated and measured results ar... View full abstract»

• ### Contactless Microwave Technique Based on a Spread-Loss Model for Dielectric Materials Characterization

Publication Year: 2009, Page(s):33 - 35
Cited by:  Papers (14)
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A free-space method without any focusing mechanisms for determining the complex permittivity of dielectric materials is demonstrated. A model based on geometrical optics is developed for the propagation of a spherical electromagnetic wave through a material. The proposed method implemented using a four-port reflectometer associated to a pyramidal horn antenna is validated through an application re... View full abstract»

• ### Tunable $({rm La},{rm Sr}){rm MnO}_{3}$ (LSMO) Ferromagnetic Thin Films for Radio Frequency Applications

Publication Year: 2009, Page(s):36 - 38
Cited by:  Papers (2)
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In this letter, an original work in tunable (La,Sr)MnO3 (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO2/Si heterostructure. Interdigitated capacitor structures are used to study the behavior of LSMO thin film materials whe... View full abstract»

• ### An Active-Inductor Injection Locked Frequency Divider With Variable Division Ratio

Publication Year: 2009, Page(s):39 - 41
Cited by:  Papers (16)
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This letter presents a wide-locking range, body-injected, injection locked frequency divider (ILFD) with tunable active inductors (TAIs) and variable division ratio. The ILFD was fabricated in the 0.18 mum 1P6M CMOS technology, and it has the modulus of 2, 3, 4, and 5, and can be used as a first-harmonic injection-locked oscillator (ILO). The divide-by-3 function is performed by injecting differen... View full abstract»

• ### A 20 to 24 GHz $+$16.8 dBm Fully Integrated Power Amplifier Using 0.18 $mu{rm m}$ CMOS Process

Publication Year: 2009, Page(s):42 - 44
Cited by:  Papers (23)
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A 20-24 GHz, fully integrated power amplifier (PA) with on-chip input and output matching is realized in 0.18 mum standard CMOS process. By cascading two cascode stages, the PA achieves 15 dB small signal gain, 10.7% power added efficiency, 16.8 dBm output saturation power and high power density per chip area of 0.137 W/mm2, which is believed to be the highest power density to our knowl... View full abstract»

• ### A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology

Publication Year: 2009, Page(s):45 - 47
Cited by:  Papers (32)
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A 50 to 70 GHz wideband power amplifier (PA) is developed in MS/RF 90 nm 1P9M CMOS process. This PA achieves a measured Psat of 13.8 dBm, P1 dB of 10.3 dBm, power added efficiency (PAE) of 12.6%, and linear power gain of 30 dB at 60 GHz under VDD biased at 1.8 V. When VDD is biased at 3 V, it exhibits Psat of 18 dBm, P1 <... View full abstract»

• ### UHF RFID Reader With Reflected Power Canceller

Publication Year: 2009, Page(s):48 - 50
Cited by:  Papers (20)
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Reflected power imposes severe linearity problems to the receiver in radio frequency identification (RFID) readers. In this letter, the design and realization of a ultra high frequency RFID reader with a reflected power canceller circuit based on quadrature feedback are presented. Theory and measurements of the signal and noise in the receiver are presented as a function of incident carrier power.... View full abstract»

Publication Year: 2009, Page(s):51 - 52
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• ### IEEE Microwave and Wireless Components Letters reviewers list

Publication Year: 2009, Page(s): C3
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• ### Blank page [back cover]

Publication Year: 2009, Page(s): C4
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## Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

Full Aims & Scope

## Meet Our Editors

Editor in Chief
N. Scott Barker
Dept. Elect. Comp. Eng.
University of Virginia
Charlottesville, VA 22904
barker@virginia.edu
dsk6n@virginia.edu