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Microwave and Wireless Components Letters, IEEE

Issue 1 • Date Jan. 2009

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Displaying Results 1 - 22 of 22
  • Table of contents

    Page(s): C1
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  • IEEE Microwave and Wireless Components Letters publication information

    Page(s): C2
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  • Editorial

    Page(s): 1 - 2
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  • Improved Accuracy Factors for the Nonuniform Fast Fourier Transform (NUFFT) Algorithm

    Page(s): 3 - 5
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (335 KB) |  | HTML iconHTML  

    Based on the regular Fourier matrix, a new set of accuracy factors is proposed for the nonuniform fast Fourier transform algorithm to improve the accuracy of transformed data. It shows that the proposed factors can reduce the errors by three to more than ten times with almost the same number of arithmetic operations. Numerical examples are shown for the applications in computational electromagnetics. View full abstract»

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  • Efficient High-Order Absorbing Boundary Condition for the ADI-FDTD Method

    Page(s): 6 - 8
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (281 KB) |  | HTML iconHTML  

    In this letter, an efficient high-order absorbing boundary condition for the alternating-direction-implicit-finite-difference time-domain (ADI-FDTD) method is developed. The proposed high-order absorbing boundary condition (ABC) has very high numerical efficiency because it can keep the tri-diagonal matrix form during the ADI iteration. The absorbing performance of the proposed ABC is analyzed theoretically. To verify the performance of the proposed high-order ABC, a rectangular waveguide problem which has very strong dispersion characteristic is analyzed with the ADI-FDTD method. Numerical results show that the proposed high-order ABC has excellent absorbing performance. View full abstract»

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  • Full-Periphery Surface Impedance for Skin-Effect Approximation in Electric Field Integral Equation

    Page(s): 9 - 11
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (224 KB) |  | HTML iconHTML  

    A new surface impedance model for RL-extraction in lossy two-dimensional (2-D) interconnects of rectangular cross section is presented. The model is derived directly from the volumetric electric field integral equation under the approximation of the unknown volumetric current density as a product of the exponential factor describing the skin-effect and the unknown surface current density on the conductor's periphery. By proper accounting for the coupling between the boundary elements situated on the top and bottom surfaces of conductor with the elements located on the side-walls, the model maintains accuracy from dc to multi-GHz frequencies as well as for conductors with both large and small thickness/width ratios. View full abstract»

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  • Modeling Multiple Vias With Arbitrary Shape of Antipads and Pads in High Speed Interconnect Circuits

    Page(s): 12 - 14
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (399 KB) |  | HTML iconHTML  

    This letter successfully extends the full-wave semi-analytical approach, based on Foldy-Lax multiple scattering equations and modal expansions, to solve massively-coupled multiple vias with arbitrary shape of antipads and pads in high speed interconnect circuits. The magnetic frill current at the antipad aperture is calculated using finite difference method. Numerical examples of as many as 16-by-16 via array demonstrate that this approach is able to model the multiple vias problem at about five thousand times faster than Ansoft HFSS and yet is within 5% difference of accuracy up to 20 GHz. View full abstract»

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  • Reduction of Transient Far-End Crosstalk Voltage and Jitter in DIMM Connectors for DRAM Interface

    Page(s): 15 - 17
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (339 KB) |  | HTML iconHTML  

    The transient far-end crosstalk voltage and the crosstalk-induced jitter of dual in-line memory module (DIMM) connectors are reduced by about 80% by increasing the mutual capacitance between DIMM connector pins with the additional interdigitated-comb-shaped metal-stub patterns on the motherboard. It was confirmed by the far-end crosstalk voltage waveform measurements using TDR and the eye diagram measurements at the data rates of 15 Mbps, 100 Mbps, and 3 Gbps. This reduction technique can be applied to the connectors where the inductive coupling ratio is larger than the capacitive coupling ratio. View full abstract»

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  • A Dual-Band Bandpass Filter Based on Generalized Negative-Refractive-Index Transmission-Lines

    Page(s): 18 - 20
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (260 KB) |  | HTML iconHTML  

    A dual-band bandpass filter is presented. The filter is composed of generalized negative-refractive-index transmission-lines (NRI-TL) realized in microstrip. The filtering mechanism relies on all four of the generalized NRI-TLs' left-handed and right-handed passbands. Under the closed stopband condition, two passbands are achieved. A complete design procedure is described. A fabricated example measures 0.25lambdao0.25lambdao, where omegao is the wavelength of the center frequency of the stopband. Maximum insertion loss in the passbands (centered around 4 GHz) is measured at 1.5 dB. View full abstract»

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  • Multilayer Dual-Mode Dual-Bandpass Filter

    Page(s): 21 - 23
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (415 KB) |  | HTML iconHTML  

    A dual-mode dual-bandpass filter for the U-NII bands is proposed and demonstrated. Its effective size reduction is achieved by using a multilayer configuration. The first and the third layers incorporate microstrip dual-mode bandpass filters with operating center-frequencies of f1 =5.2 GHz and f2 =5.8 GHz, respectively. The second layer is used as a common ground plane for both filters, which also serves as a decoupling interface. Capacitive coupling transition is used to connect both filters to I/O coplanar waveguide (CPW) ports. Single and dual-band passband filter prototypes are designed, fabricated, and measured in this work, thus validating the design principle. Designed topologies of single passband filters with center frequencies of 5.2 and 5.8 GHz exhibit an out-of-band rejection better than 40 dB with a 3 dB bandwidth of 5.8% and 6%, respectively. The proposed multilayer dual-passband response with center frequencies of 5.2 and 5.8 GHz provide band-to-band isolation better than 30 dB. Measured insertion losses are lower than 2.76 dB, with 3 dB bandwidth lower than 5%. View full abstract»

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  • A Wideband and High Rejection Multimode Bandpass Filter Using Stub Perturbation

    Page(s): 24 - 26
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (268 KB) |  | HTML iconHTML  

    A novel multimode bandpass filter with high and wide rejection band is proposed by using an open stub. The open-stub has two functions in the filter: (1) perturbation for the multimode operation and (2) zero point generation at the stopband for the stopband control. With proper input/output coupling, additional two poles, i.e., four poles, can be generated for the proposed filter structure. The design is then verified by experiment. The single structure four-mode filter has low insertion loss, good stopband performance, and compact size and linear phase. View full abstract»

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  • Compact UWB Bandpass Filter With Improved Upper-Stopband Performance

    Page(s): 27 - 29
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (266 KB) |  | HTML iconHTML  

    In this letter, a novel ultra-wideband (UWB) bandpass filter with compact size and improved upper-stopband performance has been studied and implemented using multiple-mode resonator (MMR). The MMR is formed by attaching three pairs of circular impedance-stepped stubs in shunt to a high impedance microstrip line. By simply adjusting the radius of the circles of the stubs, the resonant modes of the MMR can be roughly allocated within the 3.1-10.6 GHz UWB band while suppressing the spurious harmonics in the upper-stopband. In order to enhance the coupling degree, two interdigital coupled-lines are used in the input and output sides. Thus, a predicted UWB passband is realized. Meanwhile, the insertion loss is higher than 30.0 dB in the upper-stopband from 12.1 to 27.8 GHz. Finally, the filter is successfully designed and fabricated. The EM-simulated and the measured results are presented in this work where excellent agreement between them is obtained. View full abstract»

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  • Compact Ultra-Wideband Bandpass Filter Using Dual-Line Coupling Structure

    Page(s): 30 - 32
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (133 KB) |  | HTML iconHTML  

    This letter presents a novel compact ultra-wideband (UWB) microstrip bandpass filter with spurious response suppression. A dual-mode ring resonator is constituted to allocate its first two resonant frequencies in the UWB band, and the dual-line parallel-coupled structure is used in this compact UWB filter, which is expected to achieve much tighter coupling degree. Simulated and measured results are found in good agreement with each other, showing a wide passband from 4.9 to 10.9 GHz, 15 dB return loss bandwidth of about 5 GHz, minimum insertion loss of 0.49 dB at 7.3 GHz, and wide upper stopband with more than 20 dB attenuation up to 20 GHz. View full abstract»

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  • Contactless Microwave Technique Based on a Spread-Loss Model for Dielectric Materials Characterization

    Page(s): 33 - 35
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (179 KB) |  | HTML iconHTML  

    A free-space method without any focusing mechanisms for determining the complex permittivity of dielectric materials is demonstrated. A model based on geometrical optics is developed for the propagation of a spherical electromagnetic wave through a material. The proposed method implemented using a four-port reflectometer associated to a pyramidal horn antenna is validated through an application related to the moisture measurement of a sample of cellular concrete. View full abstract»

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  • Tunable ({\rm La},{\rm Sr}){\rm MnO}_{3} (LSMO) Ferromagnetic Thin Films for Radio Frequency Applications

    Page(s): 36 - 38
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (284 KB) |  | HTML iconHTML  

    In this letter, an original work in tunable (La,Sr)MnO3 (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO2/Si heterostructure. Interdigitated capacitor structures are used to study the behavior of LSMO thin film materials when a dc electrostatic field bias is applied. With increasing the dc voltage bias, the differential resistance of the film decreases. This change is pronounced in the measured scattering parameters of the device. The presented structure exhibits a tunable wide resistance. View full abstract»

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  • An Active-Inductor Injection Locked Frequency Divider With Variable Division Ratio

    Page(s): 39 - 41
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (576 KB) |  | HTML iconHTML  

    This letter presents a wide-locking range, body-injected, injection locked frequency divider (ILFD) with tunable active inductors (TAIs) and variable division ratio. The ILFD was fabricated in the 0.18 mum 1P6M CMOS technology, and it has the modulus of 2, 3, 4, and 5, and can be used as a first-harmonic injection-locked oscillator (ILO). The divide-by-3 function is performed by injecting differential a signal to the bodies of cross-coupled transistors in the VCO. At the supply voltage of 1.5 V, the free-running divider is tunable from 0.53 to 1.72 GHz. At the incident power of 0 dBm the operation range in the first-harmonic ILO is from the incident frequency 0.53 to 3.2 GHz. The operation range in the divide-by-3 (divide-by-2) mode is about 3.59 (4.13) GHz, from the incident frequency 1.55 to 5.14 (0.87 to 5.0) GHz. View full abstract»

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  • A 20 to 24 GHz + 16.8 dBm Fully Integrated Power Amplifier Using 0.18 \mu{\rm m} CMOS Process

    Page(s): 42 - 44
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (404 KB) |  | HTML iconHTML  

    A 20-24 GHz, fully integrated power amplifier (PA) with on-chip input and output matching is realized in 0.18 mum standard CMOS process. By cascading two cascode stages, the PA achieves 15 dB small signal gain, 10.7% power added efficiency, 16.8 dBm output saturation power and high power density per chip area of 0.137 W/mm2, which is believed to be the highest power density to our knowledge. The whole chip area with pads is 0.35 mm2, which is the smallest one compared to all reported paper. View full abstract»

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  • A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology

    Page(s): 45 - 47
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (516 KB) |  | HTML iconHTML  

    A 50 to 70 GHz wideband power amplifier (PA) is developed in MS/RF 90 nm 1P9M CMOS process. This PA achieves a measured Psat of 13.8 dBm, P1 dB of 10.3 dBm, power added efficiency (PAE) of 12.6%, and linear power gain of 30 dB at 60 GHz under VDD biased at 1.8 V. When VDD is biased at 3 V, it exhibits Psat of 18 dBm, P1 dB of 12 dBm, PAE of 15%, and linear gain of 32.4 dB at 60 GHz. The MMIC PA also has a wide 3 dB bandwidth from 50 to 70 GHz, with a chip size of 0.66 times 0.5 mm2. To the author's knowledge, this PA demonstrates the highest output power, with the highest gain among the reported CMOS PAs in V-band. View full abstract»

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  • UHF RFID Reader With Reflected Power Canceller

    Page(s): 48 - 50
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (382 KB) |  | HTML iconHTML  

    Reflected power imposes severe linearity problems to the receiver in radio frequency identification (RFID) readers. In this letter, the design and realization of a ultra high frequency RFID reader with a reflected power canceller circuit based on quadrature feedback are presented. Theory and measurements of the signal and noise in the receiver are presented as a function of incident carrier power. The receiver sensitivity is even better than without the canceller with high incident carrier power: A noise spectral density at the data band is -140 dBm/Hz at +12 dBm incident carrier power. At the same time, input compression point of +15 dBm is achieved. The dynamic range of the receiver is improved by 10 dB. View full abstract»

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  • IEEE copyright form

    Page(s): 51 - 52
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  • IEEE Microwave and Wireless Components Letters reviewers list

    Page(s): C3
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  • Blank page [back cover]

    Page(s): C4
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Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

Full Aims & Scope