# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 30

Publication Year: 2009, Page(s):C1 - C4
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2009, Page(s): C2
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• ### What is in a page charge?

Publication Year: 2009, Page(s): 1
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• ### Addressing Cu/Low-$k$ Dielectric TDDB-Reliability Challenges for Advanced CMOS Technologies

Publication Year: 2009, Page(s):2 - 12
Cited by:  Papers (47)
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Low-k dielectrics, which are beneficial for chip resistance-capacitance (RC) delay improvement, crosstalk-noise minimization, and power-dissipation reduction, are indispensable for the continuous scaling of advanced VLSI circuits, particularly that of high-performance logic circuits. In this paper, several critical challenges for Cu/low-k time-dependent dielectric-breakdown (T... View full abstract»

• ### Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Publication Year: 2009, Page(s):13 - 19
Cited by:  Papers (43)
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This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of the dispersion in the I-V plane, which is confined to the ldquokneerdquo region, is observed in both RF waveform and pulsed I-V measurements. The effect is... View full abstract»

• ### A Charge-Based OTFT Model for Circuit Simulation

Publication Year: 2009, Page(s):20 - 30
Cited by:  Papers (20)
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In this paper, a mathematical model for the dc/dynamic current of organic thin-film transistors is proposed. The model is based on the variable-range hopping transport theory, i.e., thermally activated tunneling of carriers between localized states, and the mathematical expression of the current is formulated by means of the channel accumulation charge. It accurately accounts for below-threshold, ... View full abstract»

• ### Performance Improvement of Carbon-Nanotube-Incorporated Transparent Conducting Anode Film for Organic Device Application

Publication Year: 2009, Page(s):31 - 37
Cited by:  Papers (6)
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Carbon nanotubes (CNTs) were incorporated into indium tin oxide and polythiophene by mixing and then spin coating or screen printing to form the transparent conducting electrode (TCE). With only approximately 0.005%, by weight, of CNTs in the TCE, the sheet resistance was found to drop by about 25% to 40%, without any significant decrease in the transmittance. Organic light-emitting devices (OLEDs... View full abstract»

• ### SPICE Optimization of Organic FET Models Using Charge Transport Elements

Publication Year: 2009, Page(s):38 - 42
Cited by:  Papers (10)
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We report on a modeling technique that uses charge transport equations to calculate channel current in organic field effect transistors (OFETs) by numerical solution in the SPICE simulation program. SPICE is also used to optimize the model and achieve a fit to measured characteristics within 5% error. The overall modeling technique is a bridge between physical models of charge transport and a SPIC... View full abstract»

• ### Measurement of Subnanosecond Delay Through Multiwall Carbon-Nanotube Local Interconnects in a CMOS Integrated Circuit

Publication Year: 2009, Page(s):43 - 49
Cited by:  Papers (15)
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Due to their excellent electrical properties and small size, metallic carbon nanotubes (CNTs) are promising materials for interconnect wires in future integrated circuits. Indeed, simulations have firmly established CNTs as strong contenders for replacing or complementing copper interconnects. In this paper, we analyze the performances of a prototype 0.25-mum CMOS digital integrated circuit with s... View full abstract»

• ### Photosensitivity Analysis of Low-Temperature Poly-Si Thin-Film Transistor Based on the Unit-Lux-Current

Publication Year: 2009, Page(s):50 - 56
Cited by:  Papers (7)
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In this paper, the photosensitive effect of n-type low-temperature polycrystalline-silicon thin-film transistors (TFTs) is investigated. A novel layout is adopted to demonstrate that the photo leakage current occurs in the depletion region at the drain junction. Based on the Poole-Frenkel effect lowering of a coulombic barrier and phonon-assisted tunneling, it is discovered that the photosensitivi... View full abstract»

• ### Effects of Hydrogenation on Optoelectronic Properties of a-C:H Thin-Film White-Light-Emitting Diodes With Composition-Graded Carrier-Injection Layers

Publication Year: 2009, Page(s):57 - 64
Cited by:  Papers (2)
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In this paper, thin-film white-light-emitting diodes (TFWLEDs) were fabricated with a hydrogenated intrinsic amorphous carbon (i-a-C:H) film as the luminescent layer and a composition-graded (CG) hydrogenated intrinsic amorphous silicon carbide (i-a-SiC:H) film as the carrier-injection layers. The demonstrated TFWLEDs could be operated under direct-current (dc) forward or reverse bias or sinusoida... View full abstract»

• ### Estimate Threshold Voltage Shift in a-Si:H TFTs Under Increasing Bias Stress

Publication Year: 2009, Page(s):65 - 69
Cited by:  Papers (7)
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A method of estimating threshold voltage shift in hydrogenated amorphous silicon (a-Si:H) transistors under increasing bias stress is proposed. Although the threshold voltage shift in a-Si:H thin-film transistor (TFT) has been modeled well under constant bias stress, its property with increasing bias stress, which occurs in many a-Si:H-based compensating circuits, still cannot be quantified withou... View full abstract»

• ### A General and Reliable Model for Charge Pumping—Part I: Model and Basic Charge-Pumping Mechanisms

Publication Year: 2009, Page(s):70 - 77
Cited by:  Papers (11)
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Starting from a rigorous analysis of the charge-pumping (CP) mechanisms, a general CP model, which accounts for capture time constant distribution (TCD) that exists at Si -SiO2 interface, is derived. By doing so, CP curves of state-of-the-art MOS devices are extremely well simulated. It is remarkable as this is achieved in a large range of experimental conditions, confirming the reliabi... View full abstract»

• ### A General and Reliable Model for Charge Pumping—Part II: Application to the Study of Traps in $hbox{SiO}_{2}$ or in High- $kappa$ Gate Stacks

Publication Year: 2009, Page(s):78 - 84
Cited by:  Papers (7)
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The knowledge of the oxide trap characteristics, i.e., density, energy, and depth position, is of great interest not only for MOSFET with SiO2 but also for those with high-kappa gate stacks. Using the general charge pumping model derived in Part I, this paper focuses on capture by tunneling and on the energy and depth regions probed in the experimental conditions that may allow the extr... View full abstract»

• ### Proposal of Single Metal/Dual High-$k$ Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

Publication Year: 2009, Page(s):85 - 92
Cited by:  Papers (3)
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We have proposed a single metal/dual high-k gate stack for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The threshold voltage is controlled by the dual high-k dielectrics, such as MgO- and Al2O3-containing HfSiON for n- and p-type MISFETs, respectively. The gate profile is precisely controlled by taking adva... View full abstract»

• ### Asymmetric Schottky Tunneling Source SOI MOSFET Design for Mixed-Mode Applications

Publication Year: 2009, Page(s):93 - 99
Cited by:  Papers (32)
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Schottky barrier MOSFETs have recently attracted attention as a viable alternative to conventional CMOS transistors for sub-65-nm technology nodes. An asymmetric Schottky tunneling source SOI MOSFET (STS-FET) is proposed in this paper. The Schottky tunneling source SOI MOSFET has the source/drain regions replaced with silicide as opposed to highly doped silicon in conventional devices. The main fe... View full abstract»

• ### Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- $kappa$ Gate Dielectrics

Publication Year: 2009, Page(s):100 - 108
Cited by:  Papers (64)
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The tunnel field-effect transistor (tunnel FET) is a promising candidate for future CMOS technology. Its device characteristics have been subject to a variety of experimental and theoretical studies. In this paper, we evaluate the influence of using a high-kappa gate dielectric in the tunnel FET compared to a standard silicon oxide with same equivalent oxide thickness, which exhibits a quite diffe... View full abstract»

• ### A Model for Predicting On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Polysilicon Thin-Film Transistors

Publication Year: 2009, Page(s):109 - 115
Cited by:  Papers (4)
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A model for predicting on-current degradation caused by drain-avalanche hot carriers in NMOS low-temperature polysilicon thin-film transistors (TFTs) is described. The amount of trapped charge caused by hot-carrier stress was estimated by using a model describing the lightly doped drain region as an imaginary TFT, and it was found that the amount of trapped charge saturates as voltage-stress time ... View full abstract»

• ### Analytical Model of $I$– $V$ Characteristics of Arbitrarily Shallow p-n Junctions

Publication Year: 2009, Page(s):116 - 125
Cited by:  Papers (11)
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For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode expressions. In the crossover region, where the shallow d... View full abstract»

• ### Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for Low-Noise Applications

Publication Year: 2009, Page(s):126 - 131
Cited by:  Papers (1)
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The epitaxial structure of 130- nm gate-length InGaAs/InAlAs/InP high electron mobility transistors (HEMTs) has been studied in order to optimize the device performance when biased under low-noise conditions. Three essential epitaxial parameters have been varied: the In channel content ([In]: 53%, 70%, and 80%), the delta-doping concentration (delta: 3, 5, and 7 times 1012 cm-2 View full abstract»

• ### Physics of Carrier Backscattering in One- and Two-Dimensional Nanotransistors

Publication Year: 2009, Page(s):132 - 139
Cited by:  Papers (32)
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The physics of carrier backscattering in 1-D and 2-D transistors is examined analytically and by numerical simulation. An analytical formula for the backscattering coefficient is derived for elastic scattering in a 1-D channel. This formula shows that the critical length for backscattering is somewhat longer than the kT length, and it depends on the shape of the channel potential profile. For inel... View full abstract»

• ### Electron Optics Simulator: A Three-Dimensional Finite-Element Electron Gun and Collector Design Tool

Publication Year: 2009, Page(s):140 - 148
Cited by:  Papers (32)
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This paper reports the development of a fully 3-D finite-element (FE) design tool for the design of electron guns and collectors called the electron optics simulator (EOS). It is a module of the microwave tube simulator suite (MTSS) developed by the University of Electronic Science and Technology of China. EOS specifically targets problem classes including axisymmetric gun, gridded gun, multibeam ... View full abstract»

• ### MAGIC3D Simulations of a 500-W Ka-Band Coupled-Cavity Traveling-Wave Tube

Publication Year: 2009, Page(s):149 - 155
Cited by:  Papers (17)
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The 3-D particle-in-cell (PIC) simulations of a Ka-band coupled-cavity traveling-wave tube (CCTWT) are shown. The computational analysis of the Ka-band coupled-cavity slow-wave structure was conducted through the use of an electromagnetic PIC code MAGIC3D. The choice of a double-slot staggered RF cavity circuit was made because of a wide frequency bandwidth, moderate interaction impedance, and exc... View full abstract»

• ### Corrections to "Reducing the Power Consumption in the EL Displays"

Publication Year: 2009, Page(s): 156
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In the above paper [H. Kang et al., 2007], the author would like to make the following corrections. Due to a lack of knowledge of the common practice of professional publications, the author has included Rongyu Li, Xin Yang, and Tian Xiao as coauthors without their consent or knowledge. Hao Kang should be the sole author of the paper [H. Kang et al., 2007] and is responsible for all the contents. ... View full abstract»

• ### Corrections to “Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [Nov 08 3001-3011]

Publication Year: 2009, Page(s): 156
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In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy