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Solid-State and Electron Devices, IEE Proceedings I

Issue 6 • Date December 1988

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Displaying Results 1 - 5 of 5
  • Goal-oriented subgraph isomorphism technique for IC device recognition

    Page(s): 141 - 150
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (1212 KB)  

    The paper describes a programmable mask analysis system to check technology rules and extract circuits in a low cost computing environment. The mask verification language (MVL) programmer is only concerned with how a device is fabricated and not with how it is actually recognised. The system includes an optimising MVL compiler that removes redundant mask operations, and efficiency is thereby maximised by minimising the volume of mask data that must be processed. A geometry processor reduces the mask set to a set of topologically interrelated entities called features. These features are analysed to recognise instances of devices using a goal oriented sub-graph isomorphism algorithm. Conventionally, the execution times of graph isomorphism algorithms are related polynomially to the problem size. However, by careful organisation of the database, and by imposing certain rules on the structure of the MVL, execution times that are almost linear are obtained. View full abstract»

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  • CMOS integrated circuit for differential monitoring of spacecraft battery cell voltages

    Page(s): 151 - 154
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (350 KB)  

    The paper describes a circuit technique that enables the differential monitoring of battery cell voltages to be combined with digital logic on a single CMOS chip. Junction isolation of the n-well and thick MOS capacitors are used to remove the high common mode voltage present at each battery cell. The resulting small voltage is ground referenced and can be processed by on-chip AD converters. View full abstract»

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  • Stabilised high power MOSFET modules

    Page(s): 155 - 158
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (279 KB)  

    A new technique is presented that restores the feature of nearly constant current (high output slope resistance) of intensively self heated power MOSFETs. Two versions are provided: one for the conventional MOSFETs; the second for the new current sensing MOSFETs. View full abstract»

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  • Effect of HCl/O2 and O2 dry environments on the distribution of boron in oxide and silicon from thermally deposited boron

    Page(s): 159 - 161
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (312 KB)  

    Step anodisation and ion microprobe techniques have been used to study the effect of HCl/O2 and O2 dry environments on the distribution of boron in oxide and silicon from thermally deposited boron. Profiles from the two methods have been compared in silicon, and it is observed that, near the Si/SiO2 interface, the two profiles do not match. In fact, the SIMS results do not show much dip at the Si/SiO2 interface to account for segregation. As well as giving an enhanced oxidation rate, the HCl/O2 ambient introduces more boron into SiO2 than the O2 dry environment, without greatly lowering interface concentration. View full abstract»

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  • Measurement of threshold voltage and channel length of submicron MOSFETs

    Page(s): 162 - 164
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (339 KB)  

    A simple method for characterisation of MOSFETs with appreciable source and drain series resistance is presented. The ratio g/g1/2m of conductance g and transconductance gm is shown to be a linear function of gate bias, whose intercept equals the threshold voltage and whose slope is proportional to the square root of the channel length. The method is illustrated using measurements on 0.4 ¿m to 1.0 ¿m channel length LDD transistors. View full abstract»

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