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Solid-State and Electron Devices, IEE Proceedings I

Issue 4 • Date August 1988

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Displaying Results 1 - 4 of 4
  • Sensor applications of thick-film technology

    Publication Year: 1988 , Page(s): 77 - 84
    Cited by:  Papers (6)
    Click to expandAbstract | PDF file iconPDF (1147 KB)  

    The impact of thick-film technology on the development of new, inexpensive, robust and miniaturised sensors is discussed in the light of new designs and results by the authors and others. The three aspects covered are the realisation of electronic systems within sensors, the provision of support structures for sensor materials and the development of new primary sensors in the form of strain gauges... View full abstract»

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  • Some observations on the failure locus of npn transistors and its improvement using graded collector structures

    Publication Year: 1988 , Page(s): 85 - 90
    Click to expandAbstract | PDF file iconPDF (641 KB)  

    An experimental study of the mechanisms that determine the second breakdown locus of bipolar transistors has been made and supported by a ID computer analysis. The work demonstrates the important contribution towards device ruggedness made by current gain reduction at high current densities and identifies a triggering mechanism linked to current gain restoration when high multiplication levels are... View full abstract»

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  • Output characteristic stabilisation of power MOSFETs

    Publication Year: 1988 , Page(s): 91 - 93
    Cited by:  Papers (1)
    Click to expandAbstract | PDF file iconPDF (267 KB)  

    The saturation current of a biased MOS transistor decreases as the temperature is raised. Thus self-heating results in a negative equilibrium output conductance and the possibility of instability in the circuit. Experiments are reported to show that this effect can be relieved over a wide range of bias conditions using a controlled substrate bias driven from an integrated MOS sensor. View full abstract»

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  • Temperature dependence of the MOS mobility degradation

    Publication Year: 1988 , Page(s): 94 - 96
    Cited by:  Papers (1)
    Click to expandAbstract | PDF file iconPDF (288 KB)  

    The mobility of carriers in an MOS inversion layer appears to decrease as the degree of inversion increases. An investigation using Kelvin contact specimens has separated the extrinsic effect caused by the parasitic contact resistances to the channel and the intrinsic, surface scattering effect. The temperature dependence of the intrinsic effect is reported. The intrinsic effect appears to be proc... View full abstract»

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