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IEE Proceedings I - Solid-State and Electron Devices

Issue 3 • June 1988

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Displaying Results 1 - 5 of 5
  • Discretionary channel routing using score function

    Publication Year: 1988, Page(s):49 - 57
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (940 KB)

    For discretionary channel routing problems, some but not all the pins in the channel are required to be connected by their respective nets. It is solved in two phases: a selection phase, in which a set of pins that must be connected for each net is identified, and a connection phase, in which selected pins are interconnected to their respective nets. A new selection phase algorithm based on a simp... View full abstract»

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  • Book review: The Physics of VLSI Systems

    Publication Year: 1988
    IEEE is not the copyright holder of this material | PDF file iconPDF (93 KB)
    Freely Available from IEEE
  • Large-signal field analysis of an O-type travelling wave amplifier. Part 3: Three-dimensional electron motion

    Publication Year: 1988, Page(s):59 - 66
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (721 KB)

    A large-signal field analysis of an O-type travelling-wave amplifier employing a practical focusing-field arrangement is presented, based on a coupled Eulerian-Lagrangian formulation of the problem. The resulting three-dimensional electron trajectories give rise to a beam that varies with the axial co-ordinate and time. It is shown that the boundary conditions on the moving (a priori unknown) beam... View full abstract»

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  • Optical annealing of ohmic contacts for GaAs high-speed integrated circuits using a zirconium diboride barrier layer

    Publication Year: 1988, Page(s):67 - 70
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (413 KB)

    Optical annealing and zirconium diboride barrier layers have been optimised for Ni, Au, Ge alloyed ohmic contacts to n-GaAs. Contact resistances of below 0.06 ¿mm with a standard deviation of 0.02 ¿mm were attained across a 50 mm diameter wafer. MESFETs produced using this new technology have shown very good characteristics and minimal degradation after temperature stressing at 300°C for 100 h.... View full abstract»

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  • Transient analysis of schottky-barrier diodes

    Publication Year: 1988, Page(s):71 - 75
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (562 KB)

    The turnon and turnoff transients of Schottky-barrier diode are determined by analysis based on thermionic emission across the metal-semiconductor barrier and a displacement current within the space charge region. The results of the analysis are compared to those from device simulator and are shown to be in excellent agreement. 10%; time constants for both turnon and turnoff transients are shown t... View full abstract»

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