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# IEE Proceedings I - Solid-State and Electron Devices

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Displaying Results 1 - 6 of 6
• ### Automatic measurement of minority carrier lifetimes in silicon for nonuniform doped samples using the Zerbst method

Publication Year: 1987, Page(s):161 - 167
Cited by:  Papers (4)
| | PDF (736 KB)

One of the problems of automatically measuring lifetime using the Zerbst technique is the estimation of the total time required for measurement. The paper addresses this problem, and the proposed method is applicable to both uniform and nonuniformly doped samples. This enables the data to be measured in a manner which ensures that noise free plots are obtained. View full abstract»

• ### Erratum: Numerical simulation of the dynamics of field impoverishment modes

Publication Year: 1987
| PDF (53 KB)
• ### Gate controlled bulk-barrier mechanism in an MOS power transistor

Publication Year: 1987, Page(s):168 - 170
| | PDF (356 KB)

A double-gate thin base MOS structure with a lightly doped drain is characterised and shown to have potential for low on-resistance designs. The drain current is controlled by a novel gate-controlled barrier mechanism in the base, such that beyond threshold the whole base becomes strongly inverted. This bulkÂ¿ inversion gives rise to a wideÂ¿ channel which will have a much lower resistance than ... View full abstract»

• ### Versatile GaAs triangular barrier transistor structure grown by molecular beam epitaxy

Publication Year: 1987, Page(s):171 - 173
Cited by:  Papers (1)
| | PDF (311 KB)

An n-type GaAs triangular barrier transistor (TBT) has been grown by molecular beam epitaxy. Log Io against VCE and linear IC/VCE characteristics have been measured using voltage and current sources to apply the base bias. For a 100 ohm load resistor, the TBT has a power gain of 12.8. An outline theory explaining the results is presented. View full abstract»

• ### Iterative boundary method for solving elliptic partial differential equations on a topologically rectangular domain, suitable for use in electron device simulation

Publication Year: 1987, Page(s):174 - 176
| PDF (409 KB)
• ### Book review: Rate Equations in Semiconductor Electronics

Publication Year: 1987
| PDF (145 KB)