IEE Proceedings I - Solid-State and Electron Devices

Issue 2 • April 1987

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Displaying Results 1 - 6 of 6
  • Analytical method for selecting random scattering angle for polar or acoustic phonon scattering of central valley conduction band electrons in GaAs

    Publication Year: 1987, Page(s):45 - 50
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (859 KB)

    The introduction of nonparabolicity to the electron conduction band structure of GaAs produces scattering angle probability distributions which seem to be non-invertible for finding the scattering angle ß from a uniformly distributed random number r. The paper shows that an exact analytical inversion can be obtained for the acoustic phonon-electron scattering process in the central (000) valley b... View full abstract»

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  • Measurement of thermal resistance using electrical methods

    Publication Year: 1987, Page(s):51 - 56
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (823 KB)

    The electrical method of measuring thermal resistance is examined in detail and compared with results obtained using infra-red thermal imaging. It is shown that the measurement of thermal resistance using electrical methods can be very inaccurate, particularly when used to measure multicell structures or very large area devices. View full abstract»

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  • Wave propagation modes in transferred electron devices: a phase-plane analysis

    Publication Year: 1987, Page(s):57 - 62
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (557 KB)

    A simple phase-plane analysis of charge domain propagation is presented. It results from the continuity equation, where a waveform solution for the field is imposed. A field independent diffusion coefficient is considered. A piecewise linear approximation of the velocity field negative differential mobility relationship is used. Several propagation modes are thus predicted. For example, the experi... View full abstract»

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  • Efficient design rule checking using a scanline algorithm

    Publication Year: 1987, Page(s):63 - 69
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (985 KB)

    Design rule checking of integrated circuits requires many operations which manipulate and test geometric figures. Closer examination often reveals that some effort is duplicated by different operations on the same mask data. The paper describes a scanline based design rule checker which structures the mask data to allow common administrative operations to be separated from the main checking proces... View full abstract»

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  • Pulsed ruby laser diffusion of tin into GaAs

    Publication Year: 1987, Page(s):71 - 74
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (636 KB)

    Spin-on tin silica films deposited on semi-insulating undoped GaAs were irradiated by a ruby laser at various incident energies. The resulting tin diffused layers, characterised by Hall effect measurements, show the formation of an n+ layer. The surfaces of the tin doped layers were observed in a scanning electron microscope and analysed in an electron microprobe. The concentration of tin in laser... View full abstract»

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  • Switching applications of hysteresis in magnetoresistive devices

    Publication Year: 1987, Page(s):75 - 76
    IEEE is not the copyright holder of this material | PDF file iconPDF (279 KB)
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Aims & Scope

Published from 1980-1988, IEE Proceedings I contained significant and original contributions on solid-state and electron devices.

Full Aims & Scope