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IEE Proceedings I - Solid-State and Electron Devices

Issue 1 • Date February 1987

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Displaying Results 1 - 5 of 5
  • Transient current instabilities in a-Si: Hp+ni structures

    Publication Year: 1987, Page(s):1 - 6
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (775 KB)

    It has been demonstrated that amorphous silicon p+ni junctions exhibit nonvolatile polarity dependent memory switching after initial conditioning by means of a high applied potential (`forming├é┬┐). The memory on-state is due to the presence of a highly conducting filament, whose physical properties are not well understood. Recent work has shown that in junctions where the i-layer is either thin or ... View full abstract»

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  • Analysis and understanding of GaAs MESFET behaviour in power amplification

    Publication Year: 1987
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (990 KB)

    The paper provides new understanding and analysis of the behaviour of GaAs MESFETs under large signal conditions. It uses an experimental study carried out on an active load bench of the Takayama type with devices made by various methods and a numerical dynamic simulation based on a completely physical description taking into account the nonstationary electronic dynamics, the 2-dimensional effects... View full abstract»

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  • Bulk unipolar diodes in the limit of large p-region widths

    Publication Year: 1987, Page(s):17 - 22
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (837 KB)

    A unified quantitative theory is developed to analyse the electrical properties of bulk unipolar diodes. This theory is also able to account for the transition between the limiting cases of p-plane barrier devices, camel diodes and the conventional bipolar devices. The effect of the minority-carrier charges and currents on the various performances of the devices is included in the theory. The vali... View full abstract»

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  • Thermal analysis of a dual-in-line package using the finite-element method

    Publication Year: 1987, Page(s):23 - 31
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1090 KB)

    The thermal failure of electronic systems is becoming an increasingly difficult design problem, because of the trend to increase the packing density of components. This paper describes research in which the finite-element method (FEM) is used to investigate steady-state heat transfer in dual-in-line microelectronic package (DIP). Although the paper provides data for the specialist in package desig... View full abstract»

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  • Alpha particle induced soft errors in NMOS RAMS: a review

    Publication Year: 1987, Page(s):32 - 44
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1843 KB)

    The paper aims to explain the alpha particle induced soft error phenomenon using the NMOS dynamic random access memory (RAM) as a model. It discusses some of the many techniques experimented with by manufacturers to overcome the problem, and gives a review of the literature covering most aspects of soft errors in dynamic RAMs. Finally, the soft error performance of current dynamic RAM and static R... View full abstract»

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