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Solid-State and Electron Devices, IEE Proceedings I

Issue 6 • Date December 1986

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Displaying Results 1 - 5 of 5
  • Editorial

    Publication Year: 1986 , Page(s): 201 - 202
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    Freely Available from IEEE
  • Photo-induced discharge effects of ZnO semiconductor powder-resin binder layers

    Publication Year: 1986 , Page(s): 203 - 206
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (446 KB)  

    Measurements on the photo-induced discharge effects of ZnO semiconductor powder-resin binder layers show clearly their applicability as photoreceptors in low-volume xerographic machines. From the optical transmission characteristics, it can be confirmed that light is effectively guided down the binder layer as a result of multiple reflections at the semiconductor surface. An impurity or defect cen... View full abstract»

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  • Distributed charge (sub)micron MOS transistor model

    Publication Year: 1986 , Page(s): 207 - 213
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (502 KB)  

    A new enhancement MOS transistor model applicable in all operating regimes is presented in the paper. Usually, MOS transistor models are based on a global equivalent circuit. The global capacitor value determination must take into account the charge sharing, and charges must be controlled, i.e. Qs + QD + QB + QG = 0 In this model, the distributed charge model (DCM), charges are distributed along t... View full abstract»

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  • Accurate bias dependent linear model for bipolar transistors up to 6 GHz

    Publication Year: 1986 , Page(s): 214 - 220
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (571 KB)  

    A multilump linear model giving good agreement between measured and simulated 2-port parameters in the frequency range 0.5¿6 GHz and collector currents up to 20 mA is given. The collector current dependence of intrinsic elements of the model is determined. View full abstract»

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  • Quasilinear formulation with a simple remeshing scheme for the finite element based simulation of dopant diffusion in silicon

    Publication Year: 1986 , Page(s): 221 - 228
    Cited by:  Papers (2)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (785 KB)  

    The weighted residual formulation of the finite-element method is used to solve the nonlinear diffusion equation which describes dopant diffusion. Discretisation in the time domain is carried out using the Crank-Nicolson implicit scheme. A remeshing scheme based on a continuity criterion obtained by comparing the concentration values of adjacent nodes is used to introduce or eliminate nodes in the... View full abstract»

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