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IEE Proceedings I - Solid-State and Electron Devices

Issue 5 • Date October 1986

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Displaying Results 1 - 6 of 6
  • Negative differential output conductance of self heated power MOSFETs

    Publication Year: 1986, Page(s):177 - 179
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (316 KB)

    Pulsed and continuous operational curves for MOS power transistors are compared. The latter show pronounced negative differential output conductance of the drain, which is explained in terms of a mathematical model. The potential hazards of this phenomenon are discussed. View full abstract»

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  • Book review: The Design and Analysis of VLSI circuits

    Publication Year: 1986
    IEEE is not the copyright holder of this material | PDF file iconPDF (152 KB)
    Freely Available from IEEE
  • High-injection open-circuit voltage decay in pn-junction diodes with lightly doped bases

    Publication Year: 1986, Page(s):181 - 184
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (560 KB)

    Results of experimental studies of open-circuit voltage decay (OCVD) in a high resistivity (3000 ¿ cm) base (i.e. lightly doped) pn-junction diode are reported. For moderate values of applied junction voltage, a rapid initial decay followed by a slow decay is observed. As the applied junction voltage increases to higher values, the initial drop becomes more rapid, it is followed by a plateau and ... View full abstract»

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  • Effect of boundaries on the space charge potential in coupled cavity travelling wave tubes

    Publication Year: 1986, Page(s):185 - 188
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (464 KB)

    In the theory of microwave linear beam tubes, it has hitherto been assumed that the space charge potential for a cylindrical electron beam passing through a concentric, earthed, conducting tunnel broken by interaction gaps can be calculated by supposing that the tunnel is continuous. In this paper, the effects of the gaps are computed for both an electron beam and a disc of charge. It is shown tha... View full abstract»

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  • Isolated AI-SiN-(p)Si-(n)Si MISS device

    Publication Year: 1986, Page(s):189 - 192
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (465 KB)

    A new MISS switching device structure was designed and fabricated, which consists of Al/thin thermal nitride/pn+ (buried)-p-Si layers and is isolated by diffusing n-well to the buried n-layer. Furthermore, a n+-shield ring which confines the carrier flow to the MIS interface and a p+-injector which injects carriers from p to n layers were successfully implemented. The device reveals that switching... View full abstract»

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  • MOTA: a MOSFET timing simulator

    Publication Year: 1986, Page(s):193 - 200
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (743 KB)

    MOTA: a new NMOS and CMOS timing simulator, is presented. Basically, it employs a one sweep nonlinear Gauss-Seidal relaxation technique to decouple node equations, and this results in a linear performance on the computation time over the number of the gates of the circuit. It has three distinct features: (a) it provides a `SUBCIRCUIT¿ capability to simulate tightly-coupled circuit blocks. This so... View full abstract»

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