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Solid-State and Electron Devices, IEE Proceedings I

Issue 5 • Date October 1986

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Displaying Results 1 - 6 of 6
  • Negative differential output conductance of self heated power MOSFETs

    Publication Year: 1986 , Page(s): 177 - 179
    Cited by:  Papers (6)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (316 KB)  

    Pulsed and continuous operational curves for MOS power transistors are compared. The latter show pronounced negative differential output conductance of the drain, which is explained in terms of a mathematical model. The potential hazards of this phenomenon are discussed. View full abstract»

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  • Book review: The Design and Analysis of VLSI circuits

    Publication Year: 1986
    Save to Project icon | PDF file iconPDF (152 KB)  
    Freely Available from IEEE
  • High-injection open-circuit voltage decay in pn-junction diodes with lightly doped bases

    Publication Year: 1986 , Page(s): 181 - 184
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (560 KB)  

    Results of experimental studies of open-circuit voltage decay (OCVD) in a high resistivity (3000 ¿ cm) base (i.e. lightly doped) pn-junction diode are reported. For moderate values of applied junction voltage, a rapid initial decay followed by a slow decay is observed. As the applied junction voltage increases to higher values, the initial drop becomes more rapid, it is followed by a plateau and finally the slow decay. At very high applied voltages, a peak is observed in the decay curve after the initial rapid drop. The final slow decay rate remains the same in all cases. The initial rapid decay and the final slow decay can be explained with the help of the high-injection theory of Schlangenotto and Gerlach. According to this theory, the excess carriers recombine not only in the base (as in the low-injection theory of a base dominated diode) but they migrate to the emitter and recombine there also. Mathematically, this emitter base coupling is described by a parameter ß. The initial rapid decay and the final slow decay can be explained using a constant value of ß as assumed by Schlangenotto and Gerlach. It is, however, necessary to assume that ß decreases with time to explain the observed peak. Possible physical reasons for the decrease in ß are given. The final slow decay rate is used to obtain a value of 0.4 ms for the minority carrier lifetime in the base. View full abstract»

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  • Effect of boundaries on the space charge potential in coupled cavity travelling wave tubes

    Publication Year: 1986 , Page(s): 185 - 188
    Cited by:  Papers (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (464 KB)  

    In the theory of microwave linear beam tubes, it has hitherto been assumed that the space charge potential for a cylindrical electron beam passing through a concentric, earthed, conducting tunnel broken by interaction gaps can be calculated by supposing that the tunnel is continuous. In this paper, the effects of the gaps are computed for both an electron beam and a disc of charge. It is shown that for a uniform electron beam these effects can be represented by replacing the actual boundary with an equivalent continuous tunnel, the radius of which is termed the effective tunnel radius. An empirical equation has been derived from which the effective tunnel radius can be calculated to an accuracy of better than ±3%. The effective tunnel radius is a function of the tunnel radius, the gap length and the gap separation but is independent of the beam radius. For a disc of charge, it is found that the effective tunnel radius depends on the position of the disc relative to the gaps but that the average value of the effective tunnel radius as the disc moves through the gapped tunnel is equal to the value computed for a uniform electron beam. This average value of the effective tunnel radius is independent of the disc thickness. View full abstract»

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  • Isolated AI-SiN-(p)Si-(n)Si MISS device

    Publication Year: 1986 , Page(s): 189 - 192
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (465 KB)  

    A new MISS switching device structure was designed and fabricated, which consists of Al/thin thermal nitride/pn+ (buried)-p-Si layers and is isolated by diffusing n-well to the buried n-layer. Furthermore, a n+-shield ring which confines the carrier flow to the MIS interface and a p+-injector which injects carriers from p to n layers were successfully implemented. The device reveals that switching and holding voltages (Vs and VH) decrease with increasing area of the MIS junction Aj and with decreasing np-junction area Aj and thin dielectric thickness di, respectively. The holding and switching currents (IHand Is) increase with increasing AJ/Ai but decrease with increasing dielectric thickness di. The fringing effect is minimised due to the confined structure. View full abstract»

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  • MOTA: a MOSFET timing simulator

    Publication Year: 1986 , Page(s): 193 - 200
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (743 KB)  

    MOTA: a new NMOS and CMOS timing simulator, is presented. Basically, it employs a one sweep nonlinear Gauss-Seidal relaxation technique to decouple node equations, and this results in a linear performance on the computation time over the number of the gates of the circuit. It has three distinct features: (a) it provides a `SUBCIRCUIT¿ capability to simulate tightly-coupled circuit blocks. This solves the inaccuracy and the instability problems which are usually encountered in existing timing simulators, (b) it employs a physical table model for MOS devices with only 250 storage points, and (c) it utilises a simple variable time step control scheme and internal and external bypass schemes to increase the simulation speed. The run examples show that it is approximately 60 times faster than SPICE2G-5 while giving comparable precision. View full abstract»

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