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IEE Proceedings I - Solid-State and Electron Devices

Issue 4 • Date August 1986

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Displaying Results 1 - 9 of 9
  • Contrast variations in high-level multiplexed twisted nematic liquid-crystal displays

    Publication Year: 1986, Page(s):145 - 151
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (883 KB)

    Investigations have revealed contrast variations in twisted nematic liquid-crystal matrix displays. These are consistent with effective changes in the applied torque due to relaxation of the permittivity at the frequencies at which significant power is applied in the Fourier spectrum of the stimulus waveform. View full abstract»

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  • Book review: Applied Solid-State Science, Supplement 2: Silicon Integrated Circuits. Part C

    Publication Year: 1986, Page(s):151 - 152
    IEEE is not the copyright holder of this material | PDF file iconPDF (250 KB)
    Freely Available from IEEE
  • Interfacial problems in preparing a-Si:H FETs

    Publication Year: 1986, Page(s):153 - 160
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (660 KB)

    We compare the performance of amorphous silicon/silicon nitride field-effect transistors having either nitride or silicon deposited first. In the case of silicon being the first layer, underlying source and drain contacts of aluminium or chromium were compared (as aluminium may react or diffuse more easily than chromium). The best devices required the nitride to be deposited first, following which... View full abstract»

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  • Modelling the DC characteristics of VMOS power transistors for computer-aided design

    Publication Year: 1986, Page(s):161 - 162
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (203 KB)

    A mathematical formula is presented for the current-voltage characteristic of the VMOS power transistor. The two parameters of this model can be easily extracted from different regions in the device characteristics. By using this formula, the implementation of a new VMOS power transistor model into the source code of circuit-simulation programs, such as SPICE, is feasible. View full abstract»

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  • Large-signal field analysis of an O-type travelling wave amplifier. Part 2: Numerical results

    Publication Year: 1986, Page(s):163 - 168
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (624 KB)

    Numerical computation of induced current density, power gain, conversion efficiency, harmonic generation etc., pertaining to an O-type travelling wave amplifier based on the theory of Part 1 is presented and comparison with the results of other theories and experiments is made. View full abstract»

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  • Book review: Picosecond Optoelectronic Devices

    Publication Year: 1986
    IEEE is not the copyright holder of this material | PDF file iconPDF (152 KB)
    Freely Available from IEEE
  • Arbitrary space charge to bulk boundary model of Auger recombination for semiconductor power diodes

    Publication Year: 1986, Page(s):169 - 174
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (656 KB)

    An arbitrary semiconductor junction is used to obtain an equation for junction current density in terms of the conditions at the boundaries between the space charge and the quasineutral bulk regions on each side of the junction. Included are the effects of recombination in the space charge volume as well as bandgap narrowing and ambipolar diffusion effects in the bulk regions at these boundaries. ... View full abstract»

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  • Microcircuit Engineering '84

    Publication Year: 1986, Page(s):175 - 176
    IEEE is not the copyright holder of this material | PDF file iconPDF (299 KB)
    Freely Available from IEEE
  • VLSI Electronics: Microstructure Science. Volume 12: Silicon Materials

    Publication Year: 1986
    IEEE is not the copyright holder of this material | PDF file iconPDF (114 KB)
    Freely Available from IEEE