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IEE Proceedings I - Solid-State and Electron Devices

Issue 2 • Date April 1986

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Displaying Results 1 - 8 of 8
  • Editorial

    Publication Year: 1986
    IEEE is not the copyright holder of this material | PDF file iconPDF (83 KB)
    Freely Available from IEEE
  • Hot, tepid and temperate electrons in bulk GaAs

    Publication Year: 1986, Page(s):35 - 46
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1135 KB)

    By means of the Monte Carlo particle model, the transport properties of bulk intrinsic GaAs have been studied for a uniform electric field ranging from 0 to 20 MV/m. As this model is based on first principles, a profound insight into the physics of the material has been obtained. The ¿, L and X minima of the conduction band have been treated like separate bands in the effective mass approximation... View full abstract»

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  • GaAs n+ ip+ in+ barrier transistor with ultra-thin p+AlGaAs base prepared by molecular beam epitaxy

    Publication Year: 1986, Page(s):47 - 48
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (301 KB)

    A GaAs n+ ip+ in+ bulk barrier transistor with an ultra-thin p+Al0.2Ga0.8 As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the ΔEc for the conduction band barrier and by the ΔEv for the valence band barrier, in addition to the pl... View full abstract»

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  • First-order parameter extraction on enhancement silicon MOS transistors

    Publication Year: 1986, Page(s):49 - 54
    Cited by:  Papers (32)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (739 KB)

    A novel transformation technique has been devised which enables the rapid evaluation of the key MOS transistor parameters, threshold voltage, gain and mobility degradation factor without recourse to the inaccurate compromise approaches previously used. In the paper, the previous methods are reviewed to highlight the errors which can occur, and then the new technique detailed. Extensions to the tec... View full abstract»

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  • Book review: Properties of Amorphous Silicon

    Publication Year: 1986
    IEEE is not the copyright holder of this material | PDF file iconPDF (141 KB)
    Freely Available from IEEE
  • Placement expanding autolayout router

    Publication Year: 1986, Page(s):55 - 60
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (785 KB)

    An automatic channel router for integrated circuits is presented. It operates, as is commonplace with this kind of router, in two stages: the global router is based on a relative placement of subcell instances and it is executed only once during the layout generation process of a specific cell. The detailed router, however, operates in an iterative mode. Initially, the subcell instances are placed... View full abstract»

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  • Novel dynamic random access memory cell using three diodes

    Publication Year: 1986, Page(s):61 - 62
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (247 KB)

    A new dynamic random access memory cell, which incorporates three diodes in a composite structure, is proposed and investigated. In the 3-diode memory cell, one diode serves as a storage capacitor and the others serve as switches. The cell requires only three interconnect lines and can be fabricated with standard bipolar technology. The write, read, and standby operations of the cell are analysed ... View full abstract»

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  • Book review: Methods and Materials in Microelectronic Technology

    Publication Year: 1986
    IEEE is not the copyright holder of this material | PDF file iconPDF (175 KB)
    Freely Available from IEEE