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IEE Proceedings I - Solid-State and Electron Devices

Issue 1 • February 1986

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Displaying Results 1 - 7 of 7
  • Voltage-controlled negative resistance in p+-i-n+ planar diodes with injection gate

    Publication Year: 1986, Page(s):1 - 5
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (579 KB)

    The electrical properties of Si p+-i-n+ diodes with a hole injecting gate are studied. The gate is placed between the anode (p+) and the cathode (n+). Under appropriate conditions of both the gate location and the positive gate voltage with respect to the cathode, these devices exhibit voltage-controlled negative resistance (VCNR). A phenomenological model for the occurrence of VCNR is proposed. T... View full abstract»

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  • Analysis of optical writing mode in solid-state imaging devices with inherent MNOS memory

    Publication Year: 1986
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (714 KB)

    A model for optical writing in solid-state imaging devices with an inherent MNOS memory is presented. It is shown that writing under low light levels is highly enhanced by the use of a proper bias-charge (fat-zero). The optimum operating condition under which wide dynamic range can be realised without degradation of the writing is also derived. Experimental results from test elements support these... View full abstract»

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  • Taper etching of the thermal oxide layer

    Publication Year: 1986, Page(s):13 - 17
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (632 KB)

    Controllable taper windows in thermally grown silicon dioxide layers are produced by depositing a thin layer of silicafilm on the thermal oxide layer before chemical etching. As the densification temperature of silicafilm is varied from 175°C to 1150°C, taper angles from 3° to 40° are obtained. Fermat' s principle of least time is employed to derive the expression for the etched profiles of th... View full abstract»

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  • Stability of Schottky barriers at high temperatures for use in GaAs MESFET technology

    Publication Year: 1986, Page(s):18 - 24
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (868 KB)

    The stability of Schottky barrier gates in GaAs MESFETS has been investigated to allow device processing at elevated temperatures. The incorporation of a Pt diffusion barrier into the TiAu structure gives stability of electrical characteristics up to 350°C and a Ti-W-Au contact is stable up to 400°C. To achieve higher temperature stability for use in a self aligned gate (SAG) technology, a more ... View full abstract»

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  • Elimination of surface current induced failure in millimetre wave Baritt diodes

    Publication Year: 1986, Page(s):25 - 27
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (361 KB)

    The influence of surface charges on the current/voltage characteristics of Baritt diodes is described and an improved Baritt diode geometry avoiding surface currents is suggested which leads to sharp I/V behaviour and hence to stable oscillation conditions. View full abstract»

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  • Book review: Quick Reference Manual for Silicon Integrated Circuit Technology

    Publication Year: 1986
    IEEE is not the copyright holder of this material | PDF file iconPDF (98 KB)
    Freely Available from IEEE
  • Acnowledgement

    Publication Year: 1986, Page(s):29 - 31
    IEEE is not the copyright holder of this material | PDF file iconPDF (179 KB)
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