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IEE Proceedings I - Solid-State and Electron Devices

Issue 6 • December 1985

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Displaying Results 1 - 14 of 14
  • Editorial. Power semiconductor devices

    Publication Year: 1985
    IEEE is not the copyright holder of this material | PDF file iconPDF (174 KB)
    Freely Available from IEEE
  • High-voltage high-current GTO thyristors

    Publication Year: 1985, Page(s):238 - 243
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (818 KB)

    The basic design criteria for high-power gate turn-off (GTO) thyristors are discussed. Results of a Study of the influence of the p-base on gate avalanche voltage show that only a narrow range of voltages are possible. The importance of the cell array in determining debiasing effects on the gate electrode, and its effects on gate current density, are illustrated. Finally, the switching performance... View full abstract»

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  • GTO with monolithic antiparallel diode

    Publication Year: 1985, Page(s):245 - 247
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (317 KB)

    The integration of a monolithic antiparallel diode into the inactive cathode bond-pad area of a gate turnoff thyristor (GTO) has been investigated with computer modelling followed by experimental work, using as a vehicle the BTV60, a 120A GTO optimised for AC motor control. It is shown that this is feasible and is especially suitable for second generation GTO technology (fine interdigitation, unsh... View full abstract»

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  • A model for MOS transistors

    Publication Year: 1985, Page(s):248 - 252
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (603 KB)

    A model is presented for the operation of MOS transistors which is applicable to many power and short channel devices. This improved 1-dimensional charge control model allows for the effects of the mobility reduction due to the gate-channel field and to velocity saturation of the channel carriers under the high drainsource field. Experiments have verified the model for n and p channel devices. The... View full abstract»

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  • One-dimensional numerical simulation of complementary power Schottky structures

    Publication Year: 1985, Page(s):253 - 256
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (520 KB)

    A short review of the history and modelling of Schottky structures is given. A one-dimensional numerical model including tunnelling and avalanche breakdown effects for the Schottky structures is described. Simulation results on complementary power Schottky structures for the three different barrier heights (data for Cr, W, Al) are carried out for DC and transient response. View full abstract»

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  • The performance of high-voltage field relieved Schottky barrier diodes

    Publication Year: 1985, Page(s):257 - 260
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (418 KB)

    A Schottky barrier diode with field relief p+-rings which modify the surface field in the device is described. The leakage reduction per unit area is a function of geometry and for the smallest ring spacing amounted to a factor of approximately 10. The data were fitted to a simple theory of the field reduction expected from the geometrical considerations. The limits of the technique are discussed. View full abstract»

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  • 50 A 1200 Vn-channel IGT

    Publication Year: 1985, Page(s):261 - 263
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (388 KB)

    A 1200 V n-channel insulated gate transistor (IGT) has been designed and evaluated. To reduce the Miller capacitive coupling of the input and the output terminals during the transient conditions, the terraced gate design has been implemented. As a result, the Miller capacitance is lowered 4¿5 times compared to conventional gate design. Also, the gate pad is placed at the centre of the pellet so t... View full abstract»

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  • Power devices in gallium arsenide

    Publication Year: 1985, Page(s):264 - 271
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1069 KB)

    The use of gallium arsenide for power devices has recently been the subject of a number of papers. The paper examines the properties of gallium arsenide relevant to power device behaviour together with published results on power devices made in gallium arsenide. View full abstract»

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  • Erratum: An accurate and simple technique of determination of the maximum power point and measurement of some solar cell parameters

    Publication Year: 1985
    IEEE is not the copyright holder of this material | PDF file iconPDF (94 KB)
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  • Asymptotes for boundary determined current density of PIN diodes

    Publication Year: 1985, Page(s):272 - 276
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (488 KB)

    A general boundary determined equation is used to obtain the physical asymptotes for the current density of PIN diodes. Application of this equation indicates that lower level injection regions are degenerate versions of the higher level regions. Other methods depend upon precise knowledge of the carrier density profile whereas the present approach only requires a notional indication of the ratio ... View full abstract»

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  • A brief analysis of the transient forward voltage drop in fast diodes

    Publication Year: 1985, Page(s):277 - 280
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (422 KB)

    The transient forward voltage drop of fast diodes for medium power circuits is investigated using a computer model. Fast diodes, of both pn and PIN structures, are experimentally examined for a range of electrical and physical parameters. A multiple curvilinear statistical regression was used on the results and an empirical relationship is presented. View full abstract»

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  • Characterisation and modelling of SIPOS on silicon high-voltage devices

    Publication Year: 1985, Page(s):281 - 284
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (419 KB)

    The paper describes the way a semiconducting coating, such as SIPOS, controls the spread of the depletion region near the surface of simple planar high-voltage diodes. This is important to achieve the optimum breakdown performance for high-voltage devices. When an insulating oxide separates the SIPOS from the silicon, the surface layer acts as a resistive field plate and spreads a thin depletion r... View full abstract»

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  • A numerical analysis of the resurf diode structure

    Publication Year: 1985, Page(s):285 - 290
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (729 KB)

    The results of a 2-dimensional numerical analysis of medium and high-voltage diode structures that incorporate a `resurf¿ field reduction layer are presented. The work illustrates the effect of surface charge on the optimisation of the design and indicates the requirements that will ensure bulk breakdown for a wide range of surface charge densities. The results are used to assess the analytical d... View full abstract»

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  • A double etched profile for improved breakdown voltage in pn-junctions: theory and practice

    Publication Year: 1985, Page(s):291 - 294
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (448 KB)

    A poorly designed geometry at the junction edge can severely limit the blocking capability of high voltage pn-junctions. The work presented involves the design of a double groove where we attempt to spread the electric field along the plateau region formed between two grooves. This leads to reduced surface field values, giving enhanced voltage breakdown. Although the value of the peak electric fie... View full abstract»

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Aims & Scope

Published from 1980-1988, IEE Proceedings I contained significant and original contributions on solid-state and electron devices.

Full Aims & Scope