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IEE Proceedings I - Solid-State and Electron Devices

Issue 5 • Date October 1985

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Displaying Results 1 - 7 of 7
  • Small signal bias dependent model for high frequency transistors

    Publication Year: 1985, Page(s):201 - 204
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (330 KB)

    Equivalent circuits for two high-frequency transistors in the range 40¿1200 MHz have been determined. The circuit is extended for different bias conditions by varying certain parameters of the model. View full abstract»

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  • Modelling bulk and surface recombination in the sidewall space-charge layer of an emitter-base junction

    Publication Year: 1985, Page(s):205 - 209
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (663 KB)

    The sidewall space-charge region of an emitter-base junction is of importance in the determination of low current gain fall-off where both bulk and surface recombination dominate. The paper discusses the behaviour of this region using results from two different numerical analyses. A previously defined modelling parameter to represent surface recombination effects is computed from physical data and... View full abstract»

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  • Comparison of five high speed bistables by computer simulation

    Publication Year: 1985, Page(s):210 - 216
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (668 KB)

    The paper describes five different emitter-coupled logic (ECL) bistable designs and their comparison, both in the divide by 2 and transmission modes of operation, using computer simulation techniques. By adopting a single transistor model, performance differences due to processing variations have been eliminated. Factors affecting the operating rate of a bistable are discussed, and the simulations... View full abstract»

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  • Monte carlo particle simulation of a GaAs MESFET with a gate trench sloping towards the source

    Publication Year: 1985, Page(s):217 - 223
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (828 KB)

    A MESFET design with a shallow gate trench that slopes towards the source is proposed. Its characteristics have been simulated by means of the Monte Carlo particle model and compared to those of a planar and uniformly recessed gate structure of similar geometry. The sloped gate should reduce the resistance in the conduction channel and improve the noise figure. It is found that this device combine... View full abstract»

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  • Emis data reviews. Properties of amorphous silicon: a book of EMIS data reviews

    Publication Year: 1985, Page(s):224 - 226
    IEEE is not the copyright holder of this material | PDF file iconPDF (521 KB)
    Freely Available from IEEE
  • Microelectronic ion sensors: A critical survey

    Publication Year: 1985, Page(s):227 - 236
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1532 KB)

    Microelectronic ion sensors based on monolithic silicon integrated circuit (IC) and hybrid circuit technologies have been the subject of considerable research and development over the past 15 years. This paper reviews the conceptual background and history of both kinds of device, comparing their operation with those of conventional ion-selective electrodes and coated-wire electrodes. Attention is ... View full abstract»

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  • Book review: Essentials of Solid-State Electronics

    Publication Year: 1985
    IEEE is not the copyright holder of this material | PDF file iconPDF (160 KB)
    Freely Available from IEEE