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Solid-State and Electron Devices, IEE Proceedings I

Issue 1 • Date February 1985

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Displaying Results 1 - 12 of 12
  • Novel travelling-wave energy convertor

    Publication Year: 1985 , Page(s): 1 - 4
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (428 KB)  

    A new configuration of the travelling-wave microwave to DC convertor using distributed DC retardation has been investigated, and has been found to overcome the disadvantages of the conventional configuration. A high efficiency, not critically dependent on the power level, appears attainable. View full abstract»

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  • Effects of dust on the performance of concentrator photovoltaic cells

    Publication Year: 1985 , Page(s): 5 - 8
    Cited by:  Papers (3)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (439 KB)  

    The effect of dust on the performance of photovoltaic concentrators has been investigated. The dust concentration in the air was measured continuously during the test period, and the rate of dust accumulation on the concentrator's surface was determined. For the purpose of comparison, an identical concentrator, the surface of which was kept clean, was evaluated simultaneously with the dusty concentrator. The change of the I/V characteristics as a result of dust accumulation was related to the amount of dust accumulated per unit area of the collector surface (g/m2). It has been shown that the major reductions in the short-circuit current, cell temperature and the efficiency occur as the dust starts to deposit onto the collector surface, but the rate of decrease is slower for dust accumulations beyond 2 g/m2. It is argued that the dust accumulation per unit area is a more representative parameter than the exposure time for such studies. View full abstract»

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  • In situ study of electromigration by joule displacement microscopy

    Publication Year: 1985
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (524 KB)  

    The applicability of a novel scheme¿Joule displacement microscopy¿to the characterisation of electromigration is demonstrated. It involves the detection of local changes to electric resistivity. The relative influence of four parameters which govern the electromigration process-current density, temperature, and their spatial divergences, are examined. It is shown that it is thereby possible to understand the differences in the impact of electromigration observed in films of aluminium and gold. View full abstract»

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  • Layout related deformations of meander-type MOS transistor I/V characteristics

    Publication Year: 1985 , Page(s): 13 - 16
    Cited by:  Papers (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (405 KB)  

    The I/V characteristics of an n-channel silicon-gate folded MOS transistor, having a large value of gate width/length ratio, has been investigated. Significant deformations of these characteristics are reported and an explanation of the observed inconsistency with typical transistor models is proposed. View full abstract»

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  • Modelling of a new high current gain bipolar transistor with n-doped hydrogenated silicon emitter

    Publication Year: 1985 , Page(s): 17 - 22
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (880 KB)  

    The limitation of the maximum current gain attainable in a silicon bipolar transistor is due to many factors whose main effect is to prevent the blocking of minority carrier injection in the emitter. In the paper we show that blocking of minority carrier injection in the emitter, and hence a large increase of the current gain, can be achieved with a new type of npn bipolar transistor, where the emitter is made of n-doped hydrogenated amorphous silicon (a-Si: H). It is demonstrated that the very low mobility of carriers and the large bandgap (around 1.8 eV) in amorphous silicon are the two main factors involved in the improvement of the gain. The feasability and the potential interest of the device are studied in detail on the basis of the up-to-date known electrical properties of doped a-Si: H. View full abstract»

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  • Experimental 1 Mbit DRAM using power reduction techniques

    Publication Year: 1985 , Page(s): 23 - 28
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (906 KB)  

    One of the serious problems which must be overcome in realising a 1 Mbit DRAM is high-power dissipation associated with data-line charging and discharging. To solve this problem, this paper proposes the following three techniques, which permit power reduction by about one-quarter: a multidivided data-line structure, 512 refresh cycles and an on-chip voltage limiter circuit. These techniques are proven to be useful through the design and evaluation of an experimental n-MOS 1 Mbit DRAM with a 46 mm2 chip size. The chip fabricated provides a 295 mW operating power at a 260 ns cycle time despite the fast access time of 90 ns. The possibility of further power reduction is also described. View full abstract»

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  • Prediction of self-sustained oscillations in buried-heterostructure stripe lasers

    Publication Year: 1985 , Page(s): 29 - 33
    Cited by:  Papers (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (562 KB)  

    A laser model for narrow-striped DH lasers, in which there is good carrier confinement as well as good optical confinement, is proposed and analysed. Such conditions are encountered in the buried-heterostructure laser, the stripe buried-heterostructure laser, and the buried-optical-waveguide-structure laser. It is found that the model is stable, showing no self-sustained oscillations, when the value of the factor h is greater than 350. The factor h = (2¿Le/W)2, where Le is the effective diffusion length of carriers in the active layer and W is the stripe width. A device is proposed, which will generate high-speed optical pulses in a predictable and reproducible manner. View full abstract»

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  • Operation of a single-phase CCD on GaAs at 560 MHz

    Publication Year: 1985 , Page(s): 34 - 36
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (380 KB)  

    A 32 bit, two/single phase CCD has been fabricated on GaAs using a simple four-stage fabrication process. Its operation is described at frequencies of up to 560 MHz. The charge transfer efficiency was estimated to be in excess of 0.998 per transfer below 100 MHz. View full abstract»

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  • Simulation of near ballistic electron transport in a submicron GaAs diode with Alx Ga1-x As/GaAs heterojunction cathode

    Publication Year: 1985 , Page(s): 37 - 41
    Cited by:  Papers (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (607 KB)  

    A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an AlxGa1-x As/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson's equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed. View full abstract»

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  • Quasisaturation effect in high-voltage VDMOS transistors

    Publication Year: 1985 , Page(s): 42 - 46
    Cited by:  Papers (8)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (589 KB)  

    In this paper dealing with the so-called quasisaturation current limitation in high-voltage VDMOS transistors, the authors have given a linear law on the dependence of the on-state conductance on the square-root of the drain bias. A four-section model, taking into account the pinching of the drain epilayer by the space-charge extensions and the current spreading in the bulk, accounts for the quasisaturation phenomenon, and the linear behaviour of the empirical law is well verified. Finally, the scaling-up effects on the high-voltage-device current capability are discussed. View full abstract»

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  • Book review: Transmission Electron Microscopy of Silicon VLSI Circuits and Structures

    Publication Year: 1985
    Save to Project icon | PDF file iconPDF (152 KB)  
    Freely Available from IEEE
  • Recent datareview from EMIS. lonisation coefficient in GaAs, doping dependence

    Publication Year: 1985 , Page(s): 47 - 48
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (98 KB)  

    First Page of the Article
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