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IEE Proceedings I - Solid-State and Electron Devices

Issue 5 • Date October 1984

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Displaying Results 1 - 4 of 4
  • Large-signal field analysis of an O-type travelling-wave amplifier. Part 1: theory

    Publication Year: 1984, Page(s):145 - 152
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (619 KB)

    A rigorous method of analysing the large-signal behaviour of a travelling-wave amplifier is presented, starting from the Maxwell equations in the Eulerian form and the electron ballistic equation in the Lagrangian form. The key step in the method is a representation of the field components as functionals of the electron-arrival time through a Green's function sequence for the slow-wave circuit. Su... View full abstract»

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  • Hot-carrier effects in submicrometre MOS VLSIs

    Publication Year: 1984, Page(s):153 - 162
    Cited by:  Papers (27)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (770 KB)

    Hot-carrier effects in submicrometre MOS VLSI circuits are described in terms of (a) the hot-carrier injection mechanisms, (b) the device degradation, (c) the hot-carrier resistant device structures and (d) the hot-carrier phenomena under a bias of less than 3 V. Two significant hot-carrier injection mechanisms are proposed which are different from those of the channel hot-electron (CHE) and subst... View full abstract»

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  • Refractive index to gain derivative ratio in GaAs/GaAIAs semiconductor injection lasers

    Publication Year: 1984, Page(s):163 - 169
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (591 KB)

    A linear dependence of refractive index n¿ and gain coefficient g on carrier density N has been widely used by many authors in the investigation of the dynamic behaviour of semiconductor injection lasers. In the paper, it is proposed that the variation of real refractive index with carrier density should be linear, while the variation of gain coefficient with carrier density should be logarithmic... View full abstract»

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  • High-precision MOS current mirror

    Publication Year: 1984, Page(s):170 - 175
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (462 KB)

    Matching accuracies of current mirrors using SIMOX technology are discussed. The variation in matching errors has been both qualitatively and quantitatively analysed for MOS current mirrors. Matching errors at low operating currents are dominated by variations in threshold voltage and are inversely proportional to the drain current. In high-current operations, however, they are not dependent on dr... View full abstract»

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