By Topic

IEE Proceedings I - Solid-State and Electron Devices

Issue 4 • Date August 1984

Filter Results

Displaying Results 1 - 8 of 8
  • Characteristics of double heterostructure PbS1-xSex diode lasers prepared by compositional interdiffusion

    Publication Year: 1984, Page(s):113 - 120
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (858 KB)

    The performance and characteristics of graded band-gap double heterostructure PbS1-xSex diode lasers fabricated by a two-stage compositional interdiffusion technique have been studied. CW operation in these lasers was achieved easily when they were operated while immersed in liquid helium, when a minimum threshold current density of 10 A cm-2 and a maximum CW outpu... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • NMOS silicon gate transistors in large-area laser-crystallised silicon layers

    Publication Year: 1984, Page(s):121 - 124
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (518 KB)

    The properties of NMOS polycrystalline silicon gate transistors, fabricated in large-area laser-crystallised silicon layers on an insulating substrate, are described. The transistor characteristics reveal the influence of parasitic side transistors. The influence of the side-channel transistors becomes more pronounced with decreasing channel width, and has to be considered in the mobility calculat... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Dependence of the Schottky barrier height of GaP/polymer/Au diodes on the area per carboxylic acid group

    Publication Year: 1984, Page(s):125 - 128
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (402 KB)

    Langmuir-Blodgett monolayers of derivatives of poly(styrene/maleic anhydride) were deposited on n-type gallium phosphide. The Schottky barrier height of the resulting devices was shown to depend on the area per carboxylic acid group at the semiconductor-insulator interface. The barrier height changes were attributed to an interfacial dipole layer formed by the reaction of the headgroups with the n... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Distortion in CMOS operational amplifier circuits

    Publication Year: 1984, Page(s):129 - 134
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (815 KB)

    The paper presents a nonlinear distortion analysis of three basic CMOS inverter circuits, namely PMOS load, constant-current source load and push-pull inverter, and compares their performance experimentally. The analysis is based on a small-signal MOSFET model including the channel-length modulation effect. The theoretical predictions are compared with measurements made on inverters, and incorpora... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Charge control model for switching transients of metal-tunnel oxide-semiconductor thyristor

    Publication Year: 1984, Page(s):135 - 141
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (638 KB)

    A charge control model is employed to derive the expressions for the switching transients of the pn+ MIST operated in both common-emitter monostable and bistable modes. The dependence of the transients on the magnitude of driving pulse, load resistance, minority-carrier lifetime and device area is considered. The optimisation of the switching times is then discussed. Finally, the experimental veri... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An Introduction to MOS LSI Design

    Publication Year: 1984
    IEEE is not the copyright holder of this material | PDF file iconPDF (141 KB)
    Freely Available from IEEE
  • Charged Particle Interactions with Solids

    Publication Year: 1984
    IEEE is not the copyright holder of this material | PDF file iconPDF (141 KB)
    Freely Available from IEEE
  • Semiconductor and Electronic Devices

    Publication Year: 1984, Page(s):142 - 143
    IEEE is not the copyright holder of this material | PDF file iconPDF (169 KB)
    Freely Available from IEEE