By Topic

Solid-State and Electron Devices, IEE Proceedings I

Issue 4 • Date August 1984

Filter Results

Displaying Results 1 - 8 of 8
  • Characteristics of double heterostructure PbS1-xSex diode lasers prepared by compositional interdiffusion

    Publication Year: 1984 , Page(s): 113 - 120
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (858 KB)  

    The performance and characteristics of graded band-gap double heterostructure PbS1-xSex diode lasers fabricated by a two-stage compositional interdiffusion technique have been studied. CW operation in these lasers was achieved easily when they were operated while immersed in liquid helium, when a minimum threshold current density of 10 A cm-2 and a maximum CW output power of 100 μW were observed. Despite the very low threshold current density, the devices did not emit continuously when operated while mounted on the cold finger of a liquid helium cryostat. This was attributed to the active region being overheated as a consequence of the high dislocation density (≫ 106 cm-2) of the substrates used in the device fabrication. A thermal analysis of the diode lasers has yielded a figure of merit which should be low for stable CW operation to be achieved. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • NMOS silicon gate transistors in large-area laser-crystallised silicon layers

    Publication Year: 1984 , Page(s): 121 - 124
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (518 KB)  

    The properties of NMOS polycrystalline silicon gate transistors, fabricated in large-area laser-crystallised silicon layers on an insulating substrate, are described. The transistor characteristics reveal the influence of parasitic side transistors. The influence of the side-channel transistors becomes more pronounced with decreasing channel width, and has to be considered in the mobility calculations. The electron mobility is channel-length dependent, and varies from 780 cm2 V¿1 s¿1 at L = 5 ¿m to 200 cm2 V¿1 s¿1 at L = 100 ¿m. Leakage currents at VD = 4.9 V are typically 15 pA/¿m, although 20% of transistors with channel length less than 10 ¿m show leakage currents in excess of 1 ¿A. The threshold voltage depends on the drain voltage, as is typical for silicon-on-insulator structures. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Dependence of the Schottky barrier height of GaP/polymer/Au diodes on the area per carboxylic acid group

    Publication Year: 1984 , Page(s): 125 - 128
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (402 KB)  

    Langmuir-Blodgett monolayers of derivatives of poly(styrene/maleic anhydride) were deposited on n-type gallium phosphide. The Schottky barrier height of the resulting devices was shown to depend on the area per carboxylic acid group at the semiconductor-insulator interface. The barrier height changes were attributed to an interfacial dipole layer formed by the reaction of the headgroups with the native oxide/hydroxide surface layer on the semiconductor. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Distortion in CMOS operational amplifier circuits

    Publication Year: 1984 , Page(s): 129 - 134
    Cited by:  Papers (3)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (815 KB)  

    The paper presents a nonlinear distortion analysis of three basic CMOS inverter circuits, namely PMOS load, constant-current source load and push-pull inverter, and compares their performance experimentally. The analysis is based on a small-signal MOSFET model including the channel-length modulation effect. The theoretical predictions are compared with measurements made on inverters, and incorporated in an operational amplifier, fabricated in an n-well CMOS polysilicon-gate 6 ¿m technology. The results confirm that the distortion depends on the signal level, quiescent bias, channel-length modulation effect, device geometries and processing parameters. The push-pull inverter has higher gain and lower distortion than the other output circuits. Only third-harmonic distortion exists in the operational amplifier using the push-pull inverter as its output stage. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Charge control model for switching transients of metal-tunnel oxide-semiconductor thyristor

    Publication Year: 1984 , Page(s): 135 - 141
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (638 KB)  

    A charge control model is employed to derive the expressions for the switching transients of the pn+ MIST operated in both common-emitter monostable and bistable modes. The dependence of the transients on the magnitude of driving pulse, load resistance, minority-carrier lifetime and device area is considered. The optimisation of the switching times is then discussed. Finally, the experimental verification of the theory is presented. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An Introduction to MOS LSI Design

    Publication Year: 1984
    Save to Project icon | PDF file iconPDF (141 KB)  
    Freely Available from IEEE
  • Charged Particle Interactions with Solids

    Publication Year: 1984
    Save to Project icon | PDF file iconPDF (141 KB)  
    Freely Available from IEEE
  • Semiconductor and Electronic Devices

    Publication Year: 1984 , Page(s): 142 - 143
    Save to Project icon | PDF file iconPDF (169 KB)  
    Freely Available from IEEE