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IEE Proceedings I - Solid-State and Electron Devices

Issue 3 • June 1984

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Displaying Results 1 - 10 of 10
  • Visual indication of locally varying photoconductivity

    Publication Year: 1984, Page(s):77 - 80
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (689 KB)

    The paper deals with the visual indication of a locally varying carrier density or photoconductivity, which is optically generated within a semiconductor substrate and extends over a distance of some millimetres up to some tens of millimetres. The induced profile is conventionally displayed on a CRT using a special substrate-edge excited microstrip device that works as the sensing element. The tec... View full abstract»

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  • Book review: Thin Film Solar Cells

    Publication Year: 1984
    IEEE is not the copyright holder of this material | PDF file iconPDF (79 KB)
    Freely Available from IEEE
  • Computer-aided thermal analysis of reverse-biased PIN diodes

    Publication Year: 1984, Page(s):82 - 86
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (433 KB)

    A nonlinear heat-flow equation, taking into account the temperature dependence of specific heat and thermal conductivity, is solved using the implicit finite-difference method to obtain the temperature profiles in the reverse-biased PIN diodes dissipating pulsed RF power. The peak temperature in the diode, under both reverse- and forward-bias conditions, is estimated for equal pulse-power dissipat... View full abstract»

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  • Calculation of amplification factor μ of static induced transistor

    Publication Year: 1984, Page(s):87 - 93
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (459 KB)

    This paper has analysed the amplification factor μ of a static induced transistor (SIT), summarised all the factors affecting μ and derived practical formulas. The calculated results agree well with experimental data. View full abstract»

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  • Dynamical thermal properties of stripe-geometry laser diodes

    Publication Year: 1984
    Cited by:  Papers (8)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (818 KB)

    The dynamical thermal properties of stripe-geometry double-heterostructure GaAs¿(AlGa)As laser diodes have been analysed in this paper. For short current pulses (t ¿ 0.5 ¿s) the nonhomogeneous GaAs-(AlGa)As structure of the laser diode is reduced to the thermally equivalent homogeneous (AlGa)As structure. The dynamical thermal conduction equation is solved for this case. With the exception of a... View full abstract»

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  • Monte-carlo particle model study of a microwave photodetector

    Publication Year: 1984, Page(s):103 - 106
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1664 KB)

    We have simulated a microwave photodetector for use in photoreceivers. The detector is exposed to a flash of duration less than 25 fs. It responds with a current pulse of a few picoseconds duration; the delay in response is about 1 ps. Only a fraction of the generated carriers contribute to this response; the rest remain resident inside the device in the form of a stationary electron-hole plasma, ... View full abstract»

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  • Distribution of modulated power among longitudinal modes of a semiconductor laser

    Publication Year: 1984, Page(s):107 - 109
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (326 KB)

    Good light/current linearity semiconductor lasers may have a broad spectrum of longitudinal modes. The paper shows that these lasers may give rise to a distortion which is due to the modulation frequency dependence on the distribution of modulated power among the excited longitudinal modes. The spectral distribution of the modulated power broadens with modulation frequency. View full abstract»

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  • Band structure of δ-Sn and Ge-Sn alloys

    Publication Year: 1984, Page(s):109 - 110
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (269 KB)

    C.H.L. Goodman contains statements which, if correct, would cast doubt upon much of the experimental work done prior to 1981 on a-Sn, the diamond lattice, semiconducting phase of tin. In this article, we review the evidence and argue that there already exists in the literature ample rebuttal of Goodman's thesis. View full abstract»

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  • GaAs FET Principles and Technology

    Publication Year: 1984, Page(s):111 - 112
    IEEE is not the copyright holder of this material | PDF file iconPDF (247 KB)
    Freely Available from IEEE
  • MOS Device and Circuit Design

    Publication Year: 1984
    IEEE is not the copyright holder of this material | PDF file iconPDF (108 KB)
    Freely Available from IEEE