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IEE Proceedings I - Solid-State and Electron Devices

Issue 6 • Date December 1983

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Displaying Results 1 - 7 of 7
  • Selenium implantation into GaAs for integrated circuits

    Publication Year: 1983, Page(s):265 - 274
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1240 KB)

    To develop GaAs integrated circuits, using direct Se-ion implantation into semi-insulating substrates, it was essential to carefully characterise the electrical activation achieved for various implantation conditions to identify the various parameters which need to be understood and controlled to achieve uniformity and reproducibility. A sophisticated apparatus based on electrochemical techniques ... View full abstract»

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  • Negative differential resistivity in field-effect transistors

    Publication Year: 1983, Page(s):275 - 280
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (786 KB)

    In some GaAs MESFETs the plot of drain current aginst drain bias shows a negative slope in the saturation region. In the paper, the author demonstrates that this is due to the transport properties of GaAs. Three MESFETs of the same geometry are simulated, but with different doping using the Monte-Carlo particle model. Two of the transistors have a p-type layer of different strength between the epi... View full abstract»

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  • Depletion mode MOSFET modelling for CAD

    Publication Year: 1983, Page(s):281 - 286
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (606 KB)

    A simple CAD model for the I/V characteristics of long-channel depletion-mode MOSFETs is presented. The model is applicable to both shallow and deep channel devices and provides a complete set of characterisation equations for eachmode of operation. The model also enhances qualitative understanding of the device behaviour and provides direct correlation between the electrical characteristics and t... View full abstract»

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  • Pb1-xSnxSe/PbSe heterostructure lasers

    Publication Year: 1983, Page(s):287 - 291
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (669 KB)

    CW operation has been readily achieved in Pb1-xSnxSe diode lasers fabricated by hot-wall epitaxy using broad area or striped geometry. Single heterostructure lasers were produced by growing bismuth-doped (50 p.p.m.) PbSe epitaxial layers on Pb1-xSnxSe substrates which had dislocation densities of ~(5 - 10) × 104 cm2. These laser devices opera... View full abstract»

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  • Theory of the triangular-barrier switch

    Publication Year: 1983, Page(s):292 - 296
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (611 KB)

    The recently observed, current controlled, negative resistance behaviour in a novel bulk GaAs structure is analysed using the basic charge neutrality and carrier transport equations. The structure is composed of a triangular barrier (TB) diode (formed by creating a plane of ionised impurities in the Crystal bulk using MBE) in the immediate vicinity of a p¿n junction in the same crystal. The switc... View full abstract»

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  • Numerical simulation of microstrip Baritt oscillators

    Publication Year: 1983, Page(s):297 - 301
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (677 KB)

    A complete numerical simulation of a Baritt diode microstrip oscillator is described, and the important effects of diode and circuit temperature are discussed. Results of the numerical simulation are compared with thermal and electrical measurements on oscillator circuits and found to be in good agreement. The circuit model was used as a basis for the design of Baritt diode Doppler modules, indica... View full abstract»

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  • Correspondance: Lateral current spreading in stripe-contact semiconductor lasers

    Publication Year: 1983, Page(s):302 - 303
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (327 KB)

    Current spreading in junction lasers is calculated from a resistive model with the condition of constant potential at the stripe. Taking the resistivity of the active layer to be small, the current spreading obtained from this model compares well with one that takes into account diffusion and recombination at thepn-junction. View full abstract»

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