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Solid-State and Electron Devices, IEE Proceedings I

Issue 6 • Date December 1983

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Displaying Results 1 - 7 of 7
  • Selenium implantation into GaAs for integrated circuits

    Publication Year: 1983 , Page(s): 265 - 274
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (1240 KB)  

    To develop GaAs integrated circuits, using direct Se-ion implantation into semi-insulating substrates, it was essential to carefully characterise the electrical activation achieved for various implantation conditions to identify the various parameters which need to be understood and controlled to achieve uniformity and reproducibility. A sophisticated apparatus based on electrochemical techniques was used to determine the carrier concentration and mobility profiles. Finally, the measured profiles are related directly to the DC parameters of test FETs measured on the integrated circuit chips. View full abstract»

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  • Negative differential resistivity in field-effect transistors

    Publication Year: 1983 , Page(s): 275 - 280
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (786 KB)  

    In some GaAs MESFETs the plot of drain current aginst drain bias shows a negative slope in the saturation region. In the paper, the author demonstrates that this is due to the transport properties of GaAs. Three MESFETs of the same geometry are simulated, but with different doping using the Monte-Carlo particle model. Two of the transistors have a p-type layer of different strength between the epilayer and the substrate, the third one is without the p-type layer. The doping of the epilayer is the same for all three transistors. It was found that the stronger the p-type layer, the more it was able to contain the carrier in the epilayer; and the electric field at the source side of the gate region was correspondingly stronger. An increase in this field causes more carriers to be excited into the upper conduction bands. where their velocity decreases due to their larger effective mass. The net result is that the current decreases with increased drain bias All MESFETs tend towards negative differential resistivity, but, when the carriers can enter the substrate, this effect is counteracted by the substrate currents; often to such a degree that a positive differential resistivity will result. The transistor with the smallest substrate currents has the smallest noise figure, constant transconductance down to pinch-off and the smallest high-frequency feedback: and is, therefore, a promising candidate for microwave applications. View full abstract»

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  • Depletion mode MOSFET modelling for CAD

    Publication Year: 1983 , Page(s): 281 - 286
    Cited by:  Papers (3)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (606 KB)  

    A simple CAD model for the I/V characteristics of long-channel depletion-mode MOSFETs is presented. The model is applicable to both shallow and deep channel devices and provides a complete set of characterisation equations for eachmode of operation. The model also enhances qualitative understanding of the device behaviour and provides direct correlation between the electrical characteristics and the physical, technological and geometrical design parameters of the MOSFETs. Good agreement between the simplified model and measured device characteristics justifies its validity. View full abstract»

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  • Pb1-xSnxSe/PbSe heterostructure lasers

    Publication Year: 1983 , Page(s): 287 - 291
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (669 KB)  

    CW operation has been readily achieved in Pb1-xSnxSe diode lasers fabricated by hot-wall epitaxy using broad area or striped geometry. Single heterostructure lasers were produced by growing bismuth-doped (50 p.p.m.) PbSe epitaxial layers on Pb1-xSnxSe substrates which had dislocation densities of ~(5 - 10) × 104 cm2. These laser devices operated CW at temperatures up to 72 K with an overall tuning range of 217 cm-1. The pulse threshold current density was 54 A cm-2 at 5 K and 550 A cm-2 at 77 K. These values are lower than the values reported at these temperatures for the best double heterostructure Pb1-xSnxSe lasers. This good performance in single heterostructure Pb1-xSnxSelasers was achieved primarily due to an improved method of substrate preparation using a new electrolytic polishing procedure developed at the University of Hull. Further improvements could be anticipated of a double heterostructure device configuration. View full abstract»

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  • Theory of the triangular-barrier switch

    Publication Year: 1983 , Page(s): 292 - 296
    Cited by:  Papers (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (611 KB)  

    The recently observed, current controlled, negative resistance behaviour in a novel bulk GaAs structure is analysed using the basic charge neutrality and carrier transport equations. The structure is composed of a triangular barrier (TB) diode (formed by creating a plane of ionised impurities in the Crystal bulk using MBE) in the immediate vicinity of a p¿n junction in the same crystal. The switching phenomena in this `TB switch¿ is attributed to a regenerative feedback interaction between the p¿n junction and the TB diode. Simple closed-form expressions for the main device parameters are derived. View full abstract»

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  • Numerical simulation of microstrip Baritt oscillators

    Publication Year: 1983 , Page(s): 297 - 301
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (677 KB)  

    A complete numerical simulation of a Baritt diode microstrip oscillator is described, and the important effects of diode and circuit temperature are discussed. Results of the numerical simulation are compared with thermal and electrical measurements on oscillator circuits and found to be in good agreement. The circuit model was used as a basis for the design of Baritt diode Doppler modules, indicating how frequency drift with ambient temperature may be improved. A C-band Doppler module was constructed which drifts less than 10 MHz between ¿20°C and +40°C. View full abstract»

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  • Correspondance: Lateral current spreading in stripe-contact semiconductor lasers

    Publication Year: 1983 , Page(s): 302 - 303
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (327 KB)  

    Current spreading in junction lasers is calculated from a resistive model with the condition of constant potential at the stripe. Taking the resistivity of the active layer to be small, the current spreading obtained from this model compares well with one that takes into account diffusion and recombination at thepn-junction. View full abstract»

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