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IEE Proceedings I - Solid-State and Electron Devices

Issue 4 • Date August 1983

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Displaying Results 1 - 8 of 8
  • Measurement of thermal transients in semiconductor power devices and circuits

    Publication Year: 1983, Page(s):153 - 159
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2085 KB)

    A method for measuring microsecond thermal transients in devices and circuits is described and used to study the behaviour of commercially available low power (1 W) transistors. The results are used to demonstrate the usefulness of the method and show some agreement with previously published theoretical data. Hot spots which move from site to site on interdigitated bipolar transistor structures ha... View full abstract»

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  • Low-voltage direct-current electroluminescence in ZnS: RE thin films

    Publication Year: 1983, Page(s):160 - 164
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (574 KB)

    Bright direct-current electroluminescence has been obtained in ZnS: Cu: CI: RE (rare earth) thin films with good maintenance characteristics and efficiency. Different rare-earth elements have been used as dopants, either singly or together, to give devices which exhibit various colour electroluminescence. Brightness/voltage curves were measured as a function of device temperature, and electrolumin... View full abstract»

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  • Simulation and measurement of c/v doping profiles in multilayer structures

    Publication Year: 1983, Page(s):165 - 170
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (728 KB)

    C/V doping profiles are simulated through n-type multilayer structures containing heterojunctions. The perceived doping profile obtained from C/V measurements can differ markedly from the actual carrier profile in the vicinity of a hetero- or homojunction. The model is applied to conventional FET structures, high-electron-mobility transistors and superlattices. View full abstract»

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  • Mott-barrier mixer diodes with improved semiconductor profiles for cooled operation at submillimetre wavelengths

    Publication Year: 1983, Page(s):171 - 174
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (345 KB)

    The use of thick, low-doped epitaxial profiles permits lower noise, lower capacitance Mott-barrier mixer diodes to be fabricated without complicating diode manufacturing technology. The paper reports model predictions for metal-GaAs diodes made from such materials. View full abstract»

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  • Physical explanation of GaAs MESFET I/V characteristics

    Publication Year: 1983, Page(s):175 - 181
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (723 KB)

    The steady-state behaviour of a 1017 cm¿3 doped planar GaAs MESFET is simulated using 2-dimensional numerical analysis. The effect of the active-layer thickness on the existence of the negative resisitance in the I/V characteristics is discussed and a simple physical explanationis given in terms of the rotation of the velocity vector. The effect of the substrate on the I/V characteristics is also... View full abstract»

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  • Modelling DC characteristics of dual-gate GaAs MESFETs

    Publication Year: 1983, Page(s):182 - 186
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (631 KB)

    An analytical DC nonlinear model for the dual-gate GaAs MESFET is reported. Explicit solutions for the internal voltages, the various operating modes and the overall output transfer characteristics are given in terms of the applied external voltages. The model representation is particularly efficient and its defining parameters are rapidly and simply evaluated directly from the data sheet. The val... View full abstract»

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  • Integrated protection circuit against the forward biasing of the input junction in digital MOS ICs

    Publication Year: 1983, Page(s):187 - 191
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (748 KB)

    The paper presents a technique which prevents carrier injection into the substrate caused by a large negative-going signal applied to an AC-coupled input amplifier in digital MOS integrated circuits. The analysis of the phenomena and computer simulations of the proposed protection circuit are studied, showing that the injected charge is reduced to about 1 pC when the external coupling-capacitor ch... View full abstract»

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  • Novel accelerator energy convertor

    Publication Year: 1983, Page(s):192 - 195
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (489 KB)

    A new configuration of the linear accelerator has been investigated for use as a convertor of micro-wave energy to DC energy. Initial calculations suggest that the disadvantages of the conventional configuration as a convertor are overcome. A high efficiency not critical to the power level appears feasible. View full abstract»

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