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IEE Proceedings I - Solid-State and Electron Devices

Issue 2 • April 1983

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Displaying Results 1 - 9 of 9
  • Anisotropic etching of silicon. a model diffusion-controlled reaction

    Publication Year: 1983, Page(s):49 - 56
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (873 KB)

    In conventional isotropic etching of metals, it has been found that narrower slots take longer to etch than wider ones. This has been attributed largely to the restricted access of fresh etchant to the metal surface. Spent etchant remains at the metal surface and forms a physical etch-retarding barrier. Anisotropic etching of single crystals differs from isotropic etching, in that it is orientatio... View full abstract»

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  • Modified strong-inversion potential for accurate modelling of long-channel MOS transistors

    Publication Year: 1983, Page(s):57 - 60
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (409 KB)

    In long-channel MOS transistor modelling, the classical strong-inversion surface potential ¿S,i (y1=2¿F+V(y), where ¿F denotes the Fermi potential of the bulk material and V(y) the local potential in the channel with respect to the source electrode, is widely used. It is demonstrated in the paper that this expression for the surface potential in strong inversion may be inaccurate in certain cas... View full abstract»

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  • Book review: Solid State Devices and Integrated Circuits

    Publication Year: 1983
    IEEE is not the copyright holder of this material | PDF file iconPDF (121 KB)
    Freely Available from IEEE
  • Static model of DH laser

    Publication Year: 1983, Page(s):61 - 66
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (733 KB)

    A method of complex analysis of the double-heterostructure stripe-geometry laser, based on a new static model, is presented. The optical field distribution in the active region of the laser is described by the wave equation. The interaction between the optical field and free-charge carriers is expressed by the set of rate equations describing also the carrier-concentration profile. Owing to the in... View full abstract»

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  • Book review: Numerical Analysis for Semiconductor Devices

    Publication Year: 1983
    IEEE is not the copyright holder of this material | PDF file iconPDF (163 KB)
    Freely Available from IEEE
  • Representation of coupled-cavity slow-wave structures by equivalent circuits

    Publication Year: 1983, Page(s):67 - 72
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (673 KB)

    The slow-wave structures used in high-power travelling-wave tubes may be represented by equivalent circuits. It is shown that, by a suitable choice of equivalent circuit parameters, a good fit can be obtained between calculated curves and measured data points. The equivalent circuits may be used to represent the slow-wave structure in computer models of high-power travelling-wave tubes. If empiric... View full abstract»

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  • Power MOSFET dynamic large-signal model

    Publication Year: 1983, Page(s):73 - 79
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (904 KB)

    A large-signal dynamic circuit model for the double-diffused vertical power MOSFET is reported. The model is physically based and its parameters are readily determined from static curve tracer measurements and small-signal measurements using simple data-reduction techniques. The equivalent circuit can be implemented in general purpose nonlinear circuit analysis computer programs, such as SPICE 2, ... View full abstract»

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  • Corrigendum. Optimum designs for InGaAsP/InP (λ = 1.3 μm) planoconvex waveguide lasers under lasing conditions

    Publication Year: 1983
    IEEE is not the copyright holder of this material | PDF file iconPDF (141 KB)
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  • Physical frequency limitations of 2-terminal devices

    Publication Year: 1983, Page(s):80 - 92
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1586 KB)

    The usual causes of power limitations for microwave 2-terminal devices are first analysed; other physical limitations, which assume particular importance in the millimetre-wave range, are then systematically studied. The influence of the nonstationary effects of electron dynamics on the behaviour of millimetre 2-terminal devices is summarised. For this purpose, several recent theoretical models ar... View full abstract»

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