IEE Proceedings I - Solid-State and Electron Devices

Issue 1 • February 1983

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Displaying Results 1 - 11 of 11
  • Editorial

    Publication Year: 1983
    IEEE is not the copyright holder of this material | PDF file iconPDF (100 KB)
    Freely Available from IEEE
  • Stability of amorphous-silicon thin-film transistors

    Publication Year: 1983, Page(s):2 - 4
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (394 KB)

    The stability of amorphous-silicon/silicon-nitride thin-film transistors has been investigated by measuring the time dependence of the source-drain current decay under a constant DC gate bias at a fixed temperature. At all temperatures (25¿100°C) and gate voltages (6¿36V) used in our experiments, the current decay is due entirely to a shift in the threshold voltage caused by electron trapping i... View full abstract»

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  • Practical comparison of optoelectronic sampling systems and devices

    Publication Year: 1983
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1807 KB)

    Three different sampling systems using optoelectronic switching have been constructed and compared. The first system used two wavelengths of light: one to switch between conductors and the other to switch to ground. Sampling measurements were made on an X-band trapatt diode. The second system used a single wavelength (0.53¿m) to effect the switching between conducting lines or to ground. This new... View full abstract»

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  • Numerical solutions for surface electric field distributions in avalanching p-i-n power diodes

    Publication Year: 1983, Page(s):17 - 23
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (736 KB)

    The results of a two-dimensional finite-difference analysis of the electric field distribution near the surface of reverse-biased p-i-n power diodes are presented. The boundary conditions encountered in fully passivated and encapsulated devices have been modelled as closely as possible, thereby enabling the effects of device polarity, electrode overhang and dielectric coating to be investigated. O... View full abstract»

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  • Two-dimensional finite-element simulation of a permeable-base transistor

    Publication Year: 1983, Page(s):24 - 28
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (389 KB)

    Permeable-base-transistor modelling in two dimensions by the finite-element method is reported. The results of the applications presented demonstrate the capabilities of this simulation. View full abstract»

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  • Empirical model for gallium arsenide MESFETs

    Publication Year: 1983, Page(s):29 - 32
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (412 KB)

    The paper describes an accurate nonlinear model for GaAs MESFETs suitable for inclusion in general circuit simulation programs such as SPICE. To run efficiently, programs such as SPICE require simple models that can be described by as few parameters as possible, yet still meeting the accuracy criteria, and it is for this reason that an entirely empirical approach has been taken. The DC model for d... View full abstract»

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  • AC model for MOS transistors from transient-current computations

    Publication Year: 1983, Page(s):33 - 36
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (379 KB)

    It is shown how the terminal transient currents in an MOS transistor can be computed from analytical expressions together with the DC model under quasistatic conditions. The channel drift current is solved assuming that the increase in channel charges is supplied from source and drain contacts. Capacitances derived from our AC model agree closely with those in Ward's model using an accurate channe... View full abstract»

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  • Comparison between two-dimensional short-channel MOSFET models

    Publication Year: 1983, Page(s):37 - 46
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1492 KB)

    The miniaturisation of MOSFETs in MOS LSI to achieve high packing density, high speed, low cost and an ultra high performance has led to the development of very-short-channel MOS devices. This has given rise to several important small-geometry effects on MOSFET characteristics which cannot be described by the conventional one-dimensional analysis. A comprehensive review is presented of the various... View full abstract»

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  • Erratum: Direct-gap group IV semiconductors based on tin

    Publication Year: 1983
    IEEE is not the copyright holder of this material | PDF file iconPDF (154 KB)
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  • MOS (Metal Oxide Semiconductor) Physics and Technology

    Publication Year: 1983
    IEEE is not the copyright holder of this material | PDF file iconPDF (154 KB)
    Freely Available from IEEE
  • Deep Levels in Semiconductors

    Publication Year: 1983
    IEEE is not the copyright holder of this material | PDF file iconPDF (97 KB)
    Freely Available from IEEE

Aims & Scope

Published from 1980-1988, IEE Proceedings I contained significant and original contributions on solid-state and electron devices.

Full Aims & Scope