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IEE Proceedings I - Solid-State and Electron Devices

Issue 5 • October 1982

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Displaying Results 1 - 10 of 10
  • Gigabit logic a review

    Publication Year: 1982, Page(s):157 - 172
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2467 KB)

    The current state of gigabit logic is presented. Recent developments have made a significant contribution to this field, and it is the purpose of this' work to compare these new developments with the more traditional approaches. The relationships between device and circuit parameters are derived in an Appendix, and these relationships are used to explore the conditions which must be satisfied by t... View full abstract»

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  • High-voltage device termination techniques a comparative review

    Publication Year: 1982, Page(s):173 - 179
    Cited by:  Papers (14)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (912 KB)

    High-voltage power device performance is often limited by the ability to approach nearly ideal behaviour at the edges of the chip. Consequently, a large number of termination techniques have been explored to reduce the surface electric field at the edges of devices, and so to maximise the breakdown voltage. The paper provides a review of these techniques. A comparison between the various approache... View full abstract»

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  • Book review: Discrete Electronic Components

    Publication Year: 1982
    IEEE is not the copyright holder of this material | PDF file iconPDF (173 KB)
    Freely Available from IEEE
  • Effects of laser radiation on glow-discharge amorphous-silicon diodes

    Publication Year: 1982, Page(s):180 - 184
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (715 KB)

    Both ruby laser and CW argon ion laser irradiation increase the electrical conductance of doped hydrogenated amorphous-silicon films. The ruby laser produces the larger effect, not only due to activation of phosphorus dopant in the film, but also as the films are crystallised. These permanent conductivity changes are distinct from the reversible changes observed in lightly doped or undoped films. ... View full abstract»

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  • Book review: Reliability and Degradation of Semiconductor Devices and Circuits

    Publication Year: 1982
    IEEE is not the copyright holder of this material | PDF file iconPDF (189 KB)
    Freely Available from IEEE
  • Semiempirical expression for direct transconductance and equivalent saturated velocity in short-gate-length MESFETs

    Publication Year: 1982, Page(s):185 - 188
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (532 KB)

    A very simple and straightforward relationship has been derived between the direct transconductance and the apparent electron saturation drift velocity in GaAs MESFETs. From a comparison with experimental data it was found that this velocity may exceed the usual equilibrium velocity value. A new semiempirical relationship between the apparent non equilibrium velocity and the gate length is suggest... View full abstract»

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  • Book review: Integrated Circuits: Materials, Devices and Fabrication

    Publication Year: 1982
    IEEE is not the copyright holder of this material | PDF file iconPDF (165 KB)
    Freely Available from IEEE
  • Direct-gap group IV semiconductors based on tin

    Publication Year: 1982, Page(s):189 - 192
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (697 KB)

    The MBE growth on InSb (and CdTe) of thin films of tin with diamond structure led to two unexpected findings: (i) photovoltaic behaviour suggesting an energy gap of 0.12eV, (ii) stabilisation of the diamond structure to about 70°C (compared with 13°C for bulk material). One explanation of semiconductivity is a strain-induced splitting of the Groves-Paul degeneracy which has been taken to confer ... View full abstract»

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  • Switched optoelectronic microwave load

    Publication Year: 1982, Page(s):193 - 198
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (820 KB)

    The paper presents the analysis of a switched optoelectronic microwave load which can work either as a laser-controlled, matched or adjustable, resistive load or as a high-speed optoelectronic microwave switch. The device consists of a GaAs microstrip section controlled by a pulse-operated laser diode via substrate-edge-excitation. The exponential decay of photoconductivity across a longitudinal s... View full abstract»

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  • High-power leaky-mode operation of quaternary buried-heterostructure galnpas/lnp injection laser

    Publication Year: 1982, Page(s):199 - 200
    IEEE is not the copyright holder of this material | PDF file iconPDF (291 KB)
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