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IEE Proceedings I - Solid-State and Electron Devices

Issue 3 • June 1982

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Displaying Results 1 - 8 of 8
  • Various colour electroluminescence of rare-earth-implanted ZnS diodes

    Publication Year: 1982, Page(s):85 - 88
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (465 KB)

    Single-crystal zinc sulphide has been implanted with one or two rare-earth elements and used to fabricate light-emitting diodes. The dependence of electroluminescence brightness on current, temperature and implantation fluence has been studied, and cathodoluminescence and electroluminescence emission spectra have been measured. Different relative proportions of two implanted rare-earth elements in... View full abstract»

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  • Book review: Physics of Semiconductor Devices

    Publication Year: 1982
    IEEE is not the copyright holder of this material | PDF file iconPDF (136 KB)
    Freely Available from IEEE
  • Theoretical analysis of current spreading in stripe-geometry injection lasers

    Publication Year: 1982, Page(s):89 - 95
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (906 KB)

    Iterative techniques have been used to solve the current spreading problem in stripe contact injection lasers. The effects of n- and p-passive layers, contact resistance, and carrier diffusion in the active layer are considered. The results are presented in normalised form, facilitating their use in device design. View full abstract»

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  • Factors affecting probability distribution and yield of silicon dioxide defects

    Publication Year: 1982
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (862 KB)

    It is now possible, using nondestructive liquid crystal technique, to test the distribution and the yield of a particular but important type of defect across the wafer surface, the oxide defect. It is shown that, for defects in silicon dioxide grown in dry oxygen, the probability distribution obeys Poisson statistics for different chip sizes, different times of field application, different oxide t... View full abstract»

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  • Depth inhomogeneity of CVD Si3N4 layers

    Publication Year: 1982, Page(s):103 - 104
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (267 KB)

    The potential distribution, the effective resistivity and the etch rate of the Si3 N4 layers have been studied as a function of the nitride thickness in bevelled etched MNOS structures. An unexpectedly high level of nonuniformity has been found in thin (< 70 nm) nitride layers. This level strongly depends on the annealing conditions and may be connected with the inhomogeneous depth distribution... View full abstract»

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  • Electron - beam annealing of B-, P-, As-, Sb-, and Ga-implanted silicon by multiple-scan method

    Publication Year: 1982, Page(s):105 - 110
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (740 KB)

    Data are presented on the sheet resistance of ion-implanted silicon following isothermal electron-beam annealing by the multiple-scan method. Anneals were performed on implanted 5 mm square chips for times around 5 s, with anneal temperatures up to 1350°C. Implants of As, P, B, Sb and Ga were annealed, ranging in doses from 1013 cm¿2 to 1016 cm¿2 in both (100) and (111) orientation silicon, and... View full abstract»

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  • Generalised thermionic-emission theory of carrier transport through thin base of bipolar transistor

    Publication Year: 1982, Page(s):111 - 115
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (587 KB)

    Carrier transport through the very thin, inhomogeniusly doped base of a bipolar transistor is analysed. Use is made of the analogy between the Schottky diode and thin base transistor model to find the current/voltage characteristic. So the advanced, generalised thermionic-emission theory of Schottky barrier, taking into account quantum-mechanical effects, is easily adopted for transistor model. Th... View full abstract»

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  • Edge effects in glass-passivated collector-base junctions of high-voltage transistors

    Publication Year: 1982, Page(s):116 - 120
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (704 KB)

    A study of edge effects in glass-passivated collector-base junctions of multiepitaxial transistors is carried out by means of a two-dimensional finite element simulation of the electric field in reverse-biased junctions. The influence, on the field distribution, due to the geometrical parameters and the presence of both charges within dielectrics and equipotential rings over the external surfaces ... View full abstract»

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