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IEE Proceedings I - Solid-State and Electron Devices

Issue 1 • February 1982

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Displaying Results 1 - 5 of 5
  • Metal-semiconductor contacts

    Publication Year: 1982
    Cited by:  Papers (15)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2120 KB)

    A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with p-n junctions. View full abstract»

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  • Properties of integrated injection logic fabricated under different process conditions

    Publication Year: 1982, Page(s):15 - 20
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (772 KB)

    Nonoptimised, conventional I2L can be fabricated in processes established for other types of logic, or those for analogue circuitry. These processes vary widely in the properties of epilayer, base doping and other process parameters. To explain I2L behaviour in such processes, the static and dynamic properties of I2L have been investigated over a wide range of epilayer doping concentration and thi... View full abstract»

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  • Dependence of avalanche-induced minority current on multiplication factor

    Publication Year: 1982, Page(s):21 - 27
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (791 KB)

    The mechanism proposed by Matsunaga et al. to explain their observation of the injection of minority carriers into the substrate of a saturated n-channel MOST does not explain similar experimental results obtained using n-p-n bipolar transisitors. The alternative optical model proposed by Childs et al. does, however, apply to both measurements if it is assumed that the probability of an electron e... View full abstract»

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  • Effect of feedback carrier excitation on LED external quantum efficiency

    Publication Year: 1982, Page(s):28 - 32
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (588 KB)

    Self-absorption of photons generated by prior luminescence processes affects both the steady-state and transient characteristics of LEDs. In this study we confine ourselves to one of the most important steadystate parameters-external quantum efficiency. It is shown that the photon self-absorption increases the injected carrier concentration, and consequently the emitted photon flux. This results i... View full abstract»

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  • Correlation of LED device performance with materials and processing using CL and EBIC techniques

    Publication Year: 1982, Page(s):33 - 40
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1657 KB)

    The presence of linear features commonly known as `dark-line defects¿ is known to have a detrimental effect on the luminescence efficiency of some light-emitting diodes. The paper demonstrates the value of using SEM-CL and SEM-EBIC techniques, both for materials assessment before diode fabrication, and for evaluating the effect of various processing parameters. It is shown that commercial device-... View full abstract»

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