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IEE Proceedings I - Solid-State and Electron Devices

Issue 6 • Date December 1981

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Displaying Results 1 - 8 of 8
  • Microwave switching performance of high -speed optoelectronic switches: An efficiency comparison of the basic types

    Publication Year: 1981, Page(s):193 - 196
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (459 KB)

    Presently, four basic types of optoelectronic switches are known to be successfully applicable for high-speed optoelectronic microwave switching. A comparison of these devices in terms of maximum power transmission coefficient as a function of optical wavelength is reported. It is found that the substrate edge excitation method offers the highest overall efficiency, and is, therefore, especially p... View full abstract»

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  • Photovoltaic properties of cadmium-telluride/langmuir-film solar cells

    Publication Year: 1981, Page(s):197 - 201
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (650 KB)

    We report the properties of metal-insulator-semiconductor (MIS) solar cells based on n-type CdTe and an anthracene derivative deposited by the Langmuir-Blodgett technique. The incorporation of the organic insulating layer between a gold electrode and the CdTe is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under i... View full abstract»

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  • Schottky-barrier diodes incorporating langmuir-film interfacial monolayers

    Publication Year: 1981, Page(s):202 - 206
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (690 KB)

    n+-GaP/stearic-acid/Au MIS structures have been fabricated by depositing monolayers on the chemically etched semiconductor surface using the Langmuir-Blodgett technique. Their electronic and photoelectronic properties are compared with those of n+-GaP/Au diodes. A single monolayer of stearic acid increases the open-circuit photovoltage developed by such devices from 400mV to 900mV without signific... View full abstract»

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  • Indium phosphide oxide on Inp for MOSFET applications

    Publication Year: 1981, Page(s):207 - 210
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (659 KB)

    Oxide films have been deposited on InP by sputtering InP in an oxygen DC-excited plasma. The rate of sputtering was enhanced by applying a magnetic field. Preliminary microprobe and Auger analysis of the films has indicated equal proportions of indium and phosphorus with a good incorporation of oxygen and a moderately uniform composition. Measurements on MOS devices have shown a film resistivity o... View full abstract»

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  • Switching transients in metal-insulator (tunnel) - silicon thyristor under base voltage drive

    Publication Year: 1981, Page(s):211 - 217
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (755 KB)

    The transient switching characteristics of the metal-insulator (tunnel)-silicon thyristor under base voltage drive are examined. In the monostable common emitter mode measurements are carried out to establish the dependence of the turn-on delay and rise and fall times on base drive, pulsewidth and bias point. The turn-off delay time is also examined, and the results are explained qualitatively. Th... View full abstract»

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  • Simple model and study of charge handling and injection in charge-coupled devices

    Publication Year: 1981, Page(s):218 - 224
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (961 KB)

    An accurate simulation of charge transport in a charge-coupled device requires estimate to be made of fringing and self-induced fields. This has involved a two-dimensional solution for the potential distribution in the substrate, which can be expensive on computing time. The algorithm presented here restricts the calculation to a single set of nodal points along the surface of the device, and has ... View full abstract»

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  • Analytical modelling of depletion-mode MOSFET with short- and narrow-channel effects

    Publication Year: 1981, Page(s):225 - 238
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1445 KB)

    As we move into the VLSI era, many investigations have been performed on enhancement-mode MOS transistors, and the results have often been used for the depletion-mode device. In order to evaluate the differences from the usual enhancement-mode device, and to understand its own behaviour, we have first made an accurate modelling of a large and wide buried-channel device, assuming a step doping prof... View full abstract»

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  • CASMOS-an accurate MOS model with geometry-dependent parameters: I

    Publication Year: 1981, Page(s):239 - 247
    Cited by:  Papers (10)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (934 KB)

    The overall objective of this work has been to identify an MOS model that would meet the needs of circuit designers for CAD, and for which the parameters were easily derived and could be related to process variables, and so contribute to process control. The models in SPICE and MOSAID were evaluated but found unsatisfactory. A new model, CASMOS, has been developed which accurately represents MOS d... View full abstract»

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