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IEE Proceedings I - Solid-State and Electron Devices

Issue 5 • Date October 1981

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Displaying Results 1 - 8 of 8
  • Experimental observation of switching in MISM and MISIM devices

    Publication Year: 1981, Page(s):161 - 164
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (449 KB)

    Predictions have been made for two-state switching in metal-thin insulator-semiconductor-metal (MISIM) structures. In the paper experimental verification of such switching is provided in a V-groove and a surface geometry device. Bidirectional switching is shown for the MISIM device and three-terminal operation is demonstrated. View full abstract»

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  • Book review: Photoelectronic Image Devices: Advances in Electronics and Electron Physics Vol. 52

    Publication Year: 1981
    IEEE is not the copyright holder of this material | PDF file iconPDF (126 KB)
    Freely Available from IEEE
  • Theory of switching in MISIM structures

    Publication Year: 1981, Page(s):165 - 173
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (894 KB)

    A detailed analysis of the DC switching characteristics of metal-thin insulator-semiconductor-thin insulator-metal (MISIM) devices is presented. In contrast with conventional junction and MISM devices, they are shown to exhibit bidirectional switching. In addition, the minority-carrier concentrations are very small, and so the turn-off times should be shorter. Two distinct cases are distinguished,... View full abstract»

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  • Optical transient switching measurements on metal-insulator (tunnel)-silicon thyristor at 0.85 μm wavelength

    Publication Year: 1981, Page(s):174 - 179
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (884 KB)

    Optical transient switching measurements of the metal-insulator (tunnel)-silicon thyristor (MIST) are presented. A pulsed GaAlAs laser operating at 0.85 μm wavelength was employed to obtain the turn-on delay time and the rise and fall times of the MIST as a function of optical power level, bias and pulse width. The turn-off delay time was also measured under the same conditions, and the re... View full abstract»

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  • Large-signal circuit model for simulation of injection-laser modulation dynamics

    Publication Year: 1981, Page(s):180 - 184
    Cited by:  Papers (43)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (602 KB)

    A new large-signal circuit model of a heterojunction injection laser is presented. The model includes the current/voltage characteristics of the semiconductor heterojunction and the electro-optical dynamics of the active layer. It enables the laser and its electrical drive circuit to be analysed in a unified manner. The model can be easily implemented on general-purpose nonlinear circuit analysis ... View full abstract»

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  • Effects of masking oxide on diffusion into silicon

    Publication Year: 1981, Page(s):185 - 188
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (434 KB)

    During semiconductor processing it is common to use check slices to monitor individual process steps. Unfortunately, the sheet resistance values obtained from check slices do not always agree with actual resistor values made on slices diffused at the same time. The effect has been studied for the case of boron deposition from a vapour source and found to be real and due to the masking oxide which ... View full abstract»

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  • Publish and retrieve materials data with EMIS

    Publication Year: 1981, Page(s):189 - 191
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (423 KB)

    EMIS (electronic materials information service) is a computer-based online system currently being developed by INSPEC for launch in October 1981. It gives textual and numeric information on the properties of specified materials used in solid-state electronics and on the suppliers of such materials. The database is interrogated by a very simple interactive technique. The user gains access to EMIS u... View full abstract»

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  • Book review: Imperfections and Impurities in Semiconductor Silicon

    Publication Year: 1981
    IEEE is not the copyright holder of this material | PDF file iconPDF (143 KB)
    Freely Available from IEEE