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IEE Proceedings I - Solid-State and Electron Devices

Issue 4 • Date August 1981

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Displaying Results 1 - 7 of 7
  • Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication

    Publication Year: 1981, Page(s):109 - 130
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (3010 KB)

    In the review the processes of ion implantation and ion damage in GaAs and InP are considered. A survey of the basic physics of the implantation/damage processes is outlined together with detailed studies on the annealing required to activate the ions for semiconductor doping. The prospects and current achievements of this technological process in device fabrication are discussed in detail. View full abstract»

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  • Monte Carlo particle modelling of local heating in n-type GaAs FET

    Publication Year: 1981, Page(s):131 - 133
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (335 KB)

    By accounting for phonons absorbed and emitted by the charge carriers as they are being scattered by the lattice, it has been possible to map the locations of heat development in an n-type GaAs field-effect transistor. The pattern of heat development differs somewhat from the predictions of simple theory (JE), and, in some areas, heat is removed by the carriers. View full abstract»

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  • Calculated performance of monolithic hot-electron transistors

    Publication Year: 1981, Page(s):134 - 140
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (849 KB)

    The properties of monolithic hot-electron transistors, together with structures required to obtain optimum performance, are described. It is calculated that, in principle, structures in Si and GaAs can be made with delay times ¿ 1 ps, while maintaining useful emitter and collector barriers capable of injecting and collecting electrons with energies well above the conduction band edge in the base.... View full abstract»

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  • Characterisation of Al/AlInAs/GaInAs heterostructures

    Publication Year: 1981, Page(s):141 - 143
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (376 KB)

    The paper is concerned with the characterisation of Al/AlInAs/GaInAs hetrostructures. A band model is presented for the metal/semiconductor barrier, and the electrical studies are shown to be consistent with this model. Preliminary studies are reported on a DLTS investigation of the hetrostructure and a deep level situated 0.41 eV below the conduction band of the AlInAs. View full abstract»

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  • High-yield process for GaAs enhancement-mode MESFET integrated circuits

    Publication Year: 1981, Page(s):144 - 147
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (620 KB)

    The paper describes a high-yield process for the fabrication of enhancement-mode MESFET integrated circuits. The process utilises light-stimulated anodic oxidation followed with oxide removal as a means of recessing the gate of an FET for normally-off operation. The oxidation technique has an important self-limiting property allowing different amounts of GaAs to be oxidised according to local dopi... View full abstract»

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  • Local bipolar-transistor gain measurement for VLSI devices

    Publication Year: 1981, Page(s):148 - 153
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (649 KB)

    A method is proposed for measuring the gain of a bipolar transistor region as small as possible. The measurement then allows the evaluation particularly of the effect of the emitter-base junction edge and the technology-process influence of VLSI-technology devices. The technique consists in the generation of charge carriers in the transistor base layer by a focused laser beam in order to bias the ... View full abstract»

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  • Stability analysis of transverse modes in stripe - geometry injection lasers

    Publication Year: 1981, Page(s):154 - 159
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (690 KB)

    We analyse the spatial stability of transverse modes in stripe-geometry injection lasers. A parameter is derived as a measure of the potential spatial instability of the modes. The analysis follows the interaction between the optical field and the charge-carrier density as described by the carrier-diffusion and wave equations. A perturbation is applied to an initial configuration of the system, a ... View full abstract»

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