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Solid-State and Electron Devices, IEE Proceedings I

Issue 3 • Date June 1981

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Displaying Results 1 - 9 of 9
  • Characterisations and design considerations of lambda bipolar transistor(LBT)

    Publication Year: 1981 , Page(s): 73 - 80
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (822 KB)  

    A novel integrated A-type voltage-controlled negative-differential-resistance device consisting of a bipolar-junction transistor merged with a metal-oxide-semiconductor field-effect transistor, which has been called the lambda bipolar transistor (LBT), is studied in detail both experimentally and theoretically. By considering the effects of the current gain degradation, the DC model of the device ... View full abstract»

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  • Most transconductance multipliers for array applications

    Publication Year: 1981 , Page(s): 81 - 86
    Cited by:  Papers (8)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (916 KB)  

    The MOST transconductance multiplier is a useful device for vector-product computation in integrated form. The theory and practice of this multiplier are developed here, and its use is exemplified in monolithic programmable filters containing 256-point arrays. Multiplication accuracies of 1% and bandwidths of 1 MHz are shown to be feasible, and projections are made of the ultimate capabilities of ... View full abstract»

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  • Compatible VVMOS and NMOS technology for power MOS ICs

    Publication Year: 1981 , Page(s): 87 - 91
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (796 KB)  

    The paper describes a technology for simultaneously realising both power VVMOSTs and small signal planar NMOS devices, that together can form a power MOS IC. Device and circuit constraints are discussed and experimental results from a test IC are presented. A fully developed process, based on such a concept, could find application in such circuits as switching regulators and amplifiers. View full abstract»

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  • Circuit switching analysis for optically excited metal-insulator (tunnel)-silicon thyristor (MIST)

    Publication Year: 1981 , Page(s): 92 - 96
    Cited by:  Papers (2)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (640 KB)  

    A simple equivalent circuit is employed to model the optically induced switching conditions of the MIST, thereby permitting the delay time, rise time and fall time to be calculated. The model also enables easy examination of the dependence of the MIST's transient behaviour to both optical power overdrive and device capacitance and resistance. Experimental verification of the theory is undertaken. View full abstract»

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  • Characterisation of ion-implanted layers for GAAS FETs

    Publication Year: 1981
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (449 KB)  

    The problem of measuring very steep doping profiles, of the type usually present in ion-implanted GaAs FETs, is critically examined in the light of numerical solutions of the Poisson equation for some typical layers. It is found that the most popular techniques (C/V and saturation-current measurements) may be quite misleading or, at least, appreciable corrections are typically required. View full abstract»

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  • Circuit model of double-heterojunction laser below threshold

    Publication Year: 1981 , Page(s): 101 - 106
    Cited by:  Papers (8)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (717 KB)  

    A new circuit model of a stripe-geometry double-heterojunction injection laser below threshold is presented. The model is derived from the physics of the semiconductor heterojunction, and takes into account the effects of active-layer carrier degeneracy, high-level injection, and nonradiative recombination along the stripe edge. Turn-on delay characteristics and small-signal input resistance chara... View full abstract»

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  • Integrated Injection Logic

    Publication Year: 1981 , Page(s): 106 - 107
    Save to Project icon | PDF file iconPDF (318 KB)  
    Freely Available from IEEE
  • The Hall Effect and its Applications

    Publication Year: 1981
    Save to Project icon | PDF file iconPDF (176 KB)  
    Freely Available from IEEE
  • Crystals: Growth, Properties and Applications, vol. 2

    Publication Year: 1981
    Save to Project icon | PDF file iconPDF (176 KB)  
    Freely Available from IEEE