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IEE Proceedings I - Solid-State and Electron Devices

Issue 2 • Date February 1981

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Displaying Results 1 - 7 of 7
  • Temperature dependence of threshold current in (GaIn)(AsP) DH lasers at 1.3 and 1.5 μm wavelength

    Publication Year: 1981, Page(s):37 - 43
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (914 KB)

    (Galn)(AsP) oxide-insulated stripe lasers for both 1.3 and 1.5 μm wavelength, and with varied levels of Zn doping, have been studied for the effect of temperature on threshold current, spontaneous efficiency and carrier recombination time. The spontaneous efficiency was found to decrease considerably with temperature, and this accounted quantitatively in every case for the observed large i... View full abstract»

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  • Measurement of interface state characteristics of MOS transistor utilising charge-pumping techniques

    Publication Year: 1981, Page(s):44 - 52
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (900 KB)

    The determination of both the energy and the spatial distribution of interface states of an MOS transistor utilising charge-pumping measurements is described. The energy distribution of interface states is determined by measuring the charge-pumping current as a function of gate bias at several temperatures. Although the energy profile obtained shows several maxima and minima, a gradual increase in... View full abstract»

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  • Switching properties of inversion-controlled metal-thin insulator -Si(n)-Si(p+) devices

    Publication Year: 1981, Page(s):53 - 57
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (572 KB)

    The paper discusses the physical conditions that must be fulfilled for switching to occur in metal-thin insulator-Si(n)-Si(p+) devices. It is shown that a necessary condition for the switching to occur is that the silicon surface at the insulator-semiconductor interface is inverted whatever is the originating mechanism that causes switching. Theoretical conclusions agree with experimental results. View full abstract»

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  • Modelling the optical mis thyristor

    Publication Year: 1981, Page(s):58 - 60
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (349 KB)

    The equivalence between the electrical and optical injection in the MIS thyristor (MIST) is established. Consequently, this equivalence is utilised to study the response of the device to wavelength and amplitude variations of the incident optical radiation. Compared with the punchthrough mode of operation of the MIST, the avalanche mode promises a higher sensitivity of the switching voltage to lig... View full abstract»

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  • Measurements of dipole domains in indium phosphide using a new point-contact probe

    Publication Year: 1981, Page(s):61 - 67
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (881 KB)

    Comparisons are made between previously published domain measurements using capacitive and point-contact probes. The design and characterisation of a new point-contact probe and associated differentiator are described along with an analysis of a model of the specimen and probe, showing that the two must be treatd together as one system, and that the resistance of the probe must be matched to the r... View full abstract»

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  • Proton-induced X-ray emission studies of generation impurities in silicon

    Publication Year: 1981, Page(s):68 - 72
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (613 KB)

    In the paper we consider how proton-induced X-ray emission (PIXE), using high-energy protons (MeV), can be used as a nondestructive technique for studying impurities in silicon. The basic principles behind PIXE are presented and the PIXE system used is described. Concentrations of various impurities observed in silicon wafers have been determined and comparisons made with the spectrum obtained wit... View full abstract»

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  • Book review: Thermistors

    Publication Year: 1981
    IEEE is not the copyright holder of this material | PDF file iconPDF (111 KB)
    Freely Available from IEEE