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IEE Proceedings I - Solid-State and Electron Devices

Issue 4 • Date August 1980

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Displaying Results 1 - 14 of 14
  • Transferred-electron harmonic generators for millimetre band sources

    Publication Year: 1980, Page(s):149 - 160
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1599 KB)

    Computer simulations of n+-n-n+ transferred-electron devices predict a frequency multiplier mode with favourable properties as a power source for the millimetre band. The mode is related to the l.s.a. ocillator, but waveform distortion allows operation to a considerably higher frequency. Second-harmonic generation is much more efficient than generation of higher harmonics. The dependence of the mu... View full abstract»

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  • Erratum: Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias

    Publication Year: 1980
    IEEE is not the copyright holder of this material | PDF file iconPDF (122 KB)
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  • Minority-carrier injection(dark) metal-polycrystalline silicon contacts

    Publication Year: 1980, Page(s):161 - 167
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (827 KB)

    The dependence of minority-carrier injection current Jp on applied forward-bias voltage of metalpolysilicon contacts has been calculated within a general treatment of the recombination at grain boundaries. A uniform distribution of interface states in energy at the grain boundaries is assumed throughout. It is found approximately that Jp ¿ exp (q V/KT) for (grain-boundary) recombination limited b... View full abstract»

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  • Book review: Topics in Applied Physics Vol. 38: Charge-Coupled Devices

    Publication Year: 1980
    IEEE is not the copyright holder of this material | PDF file iconPDF (129 KB)
    Freely Available from IEEE
  • V-groove isolated b.i.f.e.t. technology for micropower i.c.s

    Publication Year: 1980, Page(s):169 - 175
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (850 KB)

    This paper describes a V-groove isolated b.i.f.e.t. technology suitable for micropower integratedcircuit fabrication. The V-groove isolation technique offers considerable advantages in area and performance over standard junction isolated technology. The technology provides an ideal combination of active elements which include low pinchoff j.f.e.t.s and bipolar transistors. The characteristics of t... View full abstract»

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  • Theory of the metal-insulator-semiconductor thyristor

    Publication Year: 1980, Page(s):176 - 182
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (742 KB)

    The bistable behaviour displayed by the m.i.-n-p+ switch (designated m.i.s.s.: an acronym for metal-insulator-silicon switch) can be electrically controlled via a third gate terminal. This three-terminal device is named m.i.s.t. for metal-insulator-semiconductor thyristor. The function of the gate control is to strengthen, or weaken, the intrinsic regeneration within the m.i.s.s., by means of majo... View full abstract»

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  • Degradation behaviour of n-channel m.o.s.f.e.t.s operated at 77K

    Publication Year: 1980, Page(s):183 - 187
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (601 KB)

    N-channel m.o.s. transistors have been operated at an ambient temperature of 77K with VDS = VGS to maximise the generation of high-energy (`hot¿) electrons in the channel. All the major transistor parameters exhibited substantial shifts which can be ascribed to two degradation mechanisms, namely the well known trapping of electrons in the gate oxide near the drain, and the generation of lattice d... View full abstract»

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  • Low-noise millimetre-wave mixer diodes: results and evaluation of a test programme

    Publication Year: 1980, Page(s):188 - 198
    Cited by:  Papers (8)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1247 KB)

    The results of extensive measurements on metal-gallium arsenide Schottky-barrier diodes in a waveguide mixer are presented, with emphasis on cooled, low-noise operation. Aspects of diode design and manufacture are reviewed, particularly with a view to the better understanding of noise generation in the diode. It appears that previous current-transport and noise-generation models require modificati... View full abstract»

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  • Scaled m.o.s. circuits: performances and simulation

    Publication Year: 1980, Page(s):199 - 202
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (471 KB)

    Transient analysis simulations are used to investigate the m.o.s. device scaling theorem. Calculations are presented of the power-delay curves of loaded static NOR gates for two sets of devices: one, a control device with seven micron channel length, and the other scaled from the control by 0.6. It is shown that, when devices are scaled correctly, circuit performance scales according to the predic... View full abstract»

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  • Monte carlo particle simulation of n-type GaAs field-effect transistors with a p-type buffer layer

    Publication Year: 1980, Page(s):203 - 206
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (477 KB)

    The Monte Carlo particle model of GaAs Schottky-barrier field-effect transistors developed at Reading has been applied to describe a new f.e.t. geometry in order to establish the noise performance. The effect of introducing a p-type layer between the epilayer and the substrate is examined and the d.c. characteristics obtained are presented. By varying the thicknesses of both the epilayer and the b... View full abstract»

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  • Characteristics of isotype n Ge-n GaAs heterojunctions

    Publication Year: 1980, Page(s):207 - 211
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (476 KB)

    Isotype heterojunctions make it possible to produce new microwave devices. At present, technological problems are still important and often, there is not a full understanding of their behaviour. In the paper, the fundamental parameters of n Ge - n GaAs heterojunctions are determined from the frequency variations of their impedances Z(¿, V). To account for the large impedance variations, a heteroj... View full abstract»

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  • Conduction in sputtered a-Si-H Schottky-barrier solar cells

    Publication Year: 1980, Page(s):212 - 217
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (640 KB)

    This paper describes the conduction mechanisms in r.f.-sputtered Schottky-barrier solar cells incorporating hydrogenated amorphous Si (a-Si-H). The illumination and temperature dependence of the open-circuit voltage(VOC) and the short-circuit current (Js¿c) of the cells are discussed. The properties of the cells containing optimum and nonoptimum a-Si-H and various Schottky metals are contrasted. ... View full abstract»

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  • Site Characterisation and Aggregation of Implanted Atoms in Materials

    Publication Year: 1980
    IEEE is not the copyright holder of this material | PDF file iconPDF (172 KB)
    Freely Available from IEEE
  • Amorphous Semiconductors

    Publication Year: 1980
    IEEE is not the copyright holder of this material | PDF file iconPDF (172 KB)
    Freely Available from IEEE