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Solid-State and Electron Devices, IEE Proceedings I

Issue 2 • Date April 1980

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Displaying Results 1 - 11 of 11
  • Small-signal analysis of the travelling-wave gyrotron using pierce parameters

    Publication Year: 1980 , Page(s): 45 - 52
    Cited by:  Papers (12)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (828 KB)  

    By comparing the travelling-wave gyrotron with the conventional travelling-wave tube, it is shown that the gyrotron interaction mechanism can be described using Pierce-type parameters. These parameters are subsequently employed to highlight some gain and frequency characteristics of the travelling-wave gyrotron, attention being focused particularly on harmonic operation. View full abstract»

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  • Comparison of methods used for determining base spreading resistance

    Publication Year: 1980 , Page(s): 53 - 61
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (959 KB)  

    A study of the many methods used for measuring base spreading resistance, rbb' has shown that some of them are inaccurate or unfeasible when applied to planar transistors. Methods investigated cover the d.c.to microwave frequency range and include coherent and incoherent signal measurements. Comparisons are also made of measured and theoretical values for several types of device. The thermal-noise method appears best because of its accuaracy and wide applicability. View full abstract»

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  • Depletion-mode m.o.s.f.e.t. model including a field-dependent surface mobility

    Publication Year: 1980 , Page(s): 62 - 66
    Cited by:  Papers (7)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (454 KB)  

    This paper presents an analytical model for depletion-mode m.o.s. transistors which is particularly suitable for c.a.d. applications, and improves the current state of the art by including the effect of the surface-mobility degradation induced by the transverse field. The model is used to fit experimental data obtained on long-channel devices, and turns out to give good results; the mean square error over the whole ID/VDS plane, for several values of the gate- and bulk-source voltages, is of the order of 1% View full abstract»

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  • Punch-through diode as a power device

    Publication Year: 1980 , Page(s): 67 - 71
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (494 KB)  

    The punch-through diode is a bidirectional nonlinear device whose speed of response makes it suitable for the suppression of very fast transients. It is autoprotecting above a minimum current density. A simple model to estimate the influence of design parameters on thermal properties is presented, and discrepancies in existing criteria for maximum power-handling capability are discussed. View full abstract»

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  • Large-signal behaviour and capability of the transistor transit-time oscillator

    Publication Year: 1980 , Page(s): 72 - 77
    Cited by:  Papers (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (482 KB)  

    The transistor transit-time oscillator (t.t.t.) feasibility has been demonstrated in recent years. Small signal, negative resistance and oscillations were obtained and the main limitations were reported. The present paper gives device potential performances under large-signal c.w. operations and proposes an optimised structure for 10 GHz. View full abstract»

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  • Baritt diodes for ka-band frequencies

    Publication Year: 1980 , Page(s): 78 - 80
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (378 KB)  

    Design rules for uniformly doped Baritt diodes in the frequency range 8 to 40 GHz are derived. The fabrication of Ka-band Baritt diodes which deliver up to 1.7 mW is described. The theoretical and experimental results of the investigated diodes fit very well. View full abstract»

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  • Techniques for analytically determining surface potential and mobility of an m.o.s. transistor

    Publication Year: 1980 , Page(s): 81 - 86
    Cited by:  Papers (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (651 KB)  

    Techniques for evaluating the surface potential and the effective surface mobility of a m.o.s. transistor are described. These techniques include determination of the fixed oxide charge density, the surface-state charge density and the average donor concentration. The surface potential is evaluated as a function of gate voltage, because this dependence is necessary in order to calculate the density of surface states from charge-pumping measurements. The effective surface mobility is evaluated as a function of bias, because this dependence is necessary in order to develop a bias-dependent 1/f noise model of a m.o.s. transistor. View full abstract»

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  • Bias-dependent 1/f noise model of an m.o.s. transistor

    Publication Year: 1980 , Page(s): 87 - 93
    Cited by:  Papers (2)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (758 KB)  

    A 1/f noise model of an m.o.s. transistor is developed which verifies previously observed dependences on the geometry and the density of surface states, but in addition predicts an explicit bias dependence. This model predicts that input 1/f voltage noise gradually increases as the gate voltage increases near threshold and continues to increase for gate voltages well above threshold. It also predicts a gradual decrease in noise as the drain voltage increases to saturation. These prediction are experimentally verified. View full abstract»

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  • Filament displacement and refraction losses in a stripe-geometry AIGaAs d.h. laser

    Publication Year: 1980 , Page(s): 94 - 97
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (436 KB)  

    The far-field, near-field and waist-intensity distributions are investigated in the nonlinear flux-current regime (kink) of a stripe-geometry d.h. laser at each of its two facets. The results are interpreted as a displacement of a deformable light guide or filament within the laser stripe, which acts as an additional built-in antiguide. Asymmetries in the far-field side-lobe intensities indicate enhanced refraction losses of the displaced filament towards that antiguide boundary towards which the near field moves and the far-field main lobe turns. View full abstract»

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  • GaAs diode/f.e.t. logic circuits for high-speed-frequency-divider applications

    Publication Year: 1980 , Page(s): 98 - 99
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (284 KB)  

    This research note reports an improved circuit for GaAs diode/f.e.t. logic that is particularly suited for high-speed-frequency-divider applications. It is also demonstrated that there is a substantial power-reduction advantage in diode/f.e.t. logic over buffered-f.e.t. logic, even on single uniformly doped GaAs active layers. Comparisons have been made on these two logic approaches on i.c.s using nominally two-micrometre-gate-length f.e.t.s.. Propagation delays of 200 to 300 ps at 3 to 4 mW power consumption have been measured on diode/f.e.t. logic gates. Similar propagation delays are observed on buffered-f.e.t. logic, but at up to six times the bias power. View full abstract»

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  • Preprocessing of data from spreading-resistance measurements

    Publication Year: 1980 , Page(s): 100 - 104
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (478 KB)  

    Spreading-resistance measurements often exhibit a lot of noise which can hinder their analysis. A method is presented for automated elimination of strongly deviating values, and smoothing of the resistance curve, leading in a few filter steps to a more accurate determination of the concentration profile. It is shown that the accuracy of the spreading-resistance technique can be increased by combining several profiles of a sample. View full abstract»

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