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Quantum Electronics, IEEE Journal of

Issue 10 • Date Oct. 2008

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Displaying Results 1 - 19 of 19
  • Table of contents

    Publication Year: 2008 , Page(s): 903 - 904
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  • Design and Optimization of High- Q Surface Mode Cavities on Patterned Metallic Surfaces

    Publication Year: 2008 , Page(s): 905 - 910
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (960 KB) |  | HTML iconHTML  

    In this paper, we show that patterned metallic surfaces can support localized resonant modes if a suitable defect in the periodicity of the structure is introduced. For those modes, optical losses due to radiative leakage perpendicular to the metallic plane can be significantly reduced by properly tuning the geometry of the defect-mode surface cavity. A design strategy based on the investigation of the electromagnetic field in the reciprocal space is suggested. View full abstract»

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  • Efficient Pulse Stretching of Q-Switched Lasers

    Publication Year: 2008 , Page(s): 911 - 915
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (562 KB) |  | HTML iconHTML  

    We present a new and simple technique for efficient stretching of Q-switched laser pulses using a novel ring resonator and a variable Pockels cell Q-switch driven by a simple circuit. The production of 10-mJ flat-topped Q-switched pulses with a duration that can be stretched by a factor of 4.5-1.8 mus without loss of pulse energy is demonstrated. We show that the pulse stretching agrees well with predictions of a numerical model. View full abstract»

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  • GaN-Based Schottky Barrier Photodetectors With a 12-Pair Mg _{\rm x} N _{\rm y} –GaN Buffer Layer

    Publication Year: 2008 , Page(s): 916 - 921
    Cited by:  Papers (25)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (777 KB) |  | HTML iconHTML  

    GaN-based ultraviolet (UV) photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair MgxNy-GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN-based UV PDs by using the 12-pair MgxNy-GaN buffer layer. With a -2-V applied bias, it was found that the reverse leakage currents measured from PDs with a single LT GaN buffer layer and that with a 12-pair MgxNy-GaN buffer layer were 4.57 times 10-6 and 1.44 times 10-12 A, respectively. It was also found that we could use the 12-pair MgxNy-GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level, and enhance the detectivity. View full abstract»

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  • High-Speed Wavelength-Tunable Optical Filter Using Cascaded Mach–Zehnder Interferometers With Apodized Sampled Gratings

    Publication Year: 2008 , Page(s): 922 - 930
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1265 KB) |  | HTML iconHTML  

    A high-speed wavelength-tunable optical filter is a key device for selecting different wavelength optical packets on a packet-by-packet basis in a photonic packet switching system. In this paper, we describe a high-speed tunable filter using apodized sampled gratings which can achieve the required filter characteristics at low cost. A sampled grating structure that exhibits a comb-like filter response is adopted to obtain a wide tuning range, implemented in InGaAsP-InP deep-ridge waveguides with vertical-groove surface gratings. In addition, apodization is applied to the sampled grating to achieve a high extinction ratio. We fabricate the filter by integrating the sampled gratings within Mach-Zehnder interferometers. The filter exhibits a tuning range of 16 nm, an extinction ratio of 20 dB, a 3-dB transmission bandwidth of 32 GHz, and a switching time of less than 8 ns. View full abstract»

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  • Time-Domain Standing-Wave Approach Based on Cold Cavity Modes for Simulation of DFB Lasers

    Publication Year: 2008 , Page(s): 931 - 937
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (416 KB) |  | HTML iconHTML  

    A standing-wave model based on ldquocoldrdquo cavity mode expansion is proposed and presented for simulation of distributed feedback (DFB) semiconductor lasers. The model is validated against the well-established traveling-wave model in terms of the static and dynamic characteristics of typical DFB lasers. Effects such as the longitudinal variation of carrier and photon densities and nonlinear gain saturation, known as the spatial and spectral hole burning, respectively, are all included in this model. Simulation examples show that the proposed approach is computationally more efficient than the traveling-wave model. The impact of the expansion mode truncation on the accuracy and efficiency is also investigated and discussed. View full abstract»

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  • Numerical Study of a DFB Semiconductor Laser and Laser Array With Chirped Structure Based on the Equivalent Chirp Technology

    Publication Year: 2008 , Page(s): 938 - 945
    Cited by:  Papers (15)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (940 KB) |  | HTML iconHTML  

    We propose that a Bragg grating with a chirp profile in a semiconductor distributed feedback (DFB) laser can be designed and fabricated through nonuniform sampling of a uniform grating based on the equivalent chirp technology (ECT). The characteristics, including the relationship between the input current and output power, the light distribution within the laser cavity, the lasing spectrum, and the linewidth, are numerically analyzed and compared with a DFB laser with a true chirped grating. The study shows that the proposed DFB laser with an equivalent chirp provides an identical performance to that of a conventional DFB laser. Based on the ECT, different chirp gratings in a DFB laser array can also be fabricated by simply using different sampling functions, with the grating period in all gratings kept constant. The key advantage of the proposed technique is that a DFB laser or laser array can be fabricated based on the conventional holography technology, which would simplify the fabrication. View full abstract»

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  • Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3- \mu\hbox {m} InAs–GaAs Quantum-Dot Lasers

    Publication Year: 2008 , Page(s): 946 - 951
    Cited by:  Papers (17)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (300 KB) |  | HTML iconHTML  

    Quantum-dot (QD) lasers exhibit many useful properties such as low threshold current, temperature and feedback insensitivity, chirpless behavior, and low linewidth enhancement factor (alphaH-factor). Although many breakthroughs have been demonstrated, the maximum modulation bandwidth remains limited in QD devices, and a strong damping of the modulation response is usually observed pointing out the role of gain compression. This paper investigates the influence of the gain compression in a 1.3-mum InAs-GaAs QD laser and its consequences on the above-threshold alphaH-factor. A model is used to explain the dependence of the alphaH-factor with the injected current and is compared with AM/FM experiments. Finally, it is shown that the higher the maximum gain, the lower the effects of gain compression and the lower the alphaH-factor. This analysis can be useful for designing chirpless QD lasers with improved modulation bandwidth as well as for isolator-free transmission under direct modulation. View full abstract»

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  • 210- \mu J Picosecond Pulses From a Quasi-CW Nd:YVO _{4} Grazing-Incidence Two-Stage Slab Amplifier Package

    Publication Year: 2008 , Page(s): 952 - 957
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (508 KB) |  | HTML iconHTML  

    A single-pass two-stage Nd:YVO4 amplifier was used to increase the energy of a 7.7-ps seed pulse from < 1 nJ to 210 muJ (11-ps time duration), maintaining the input spatial quality of the pulse. The laser-diode side-pumped grazing-incidence Nd:YVO4 slab amplifier was optimized for minimum amplified spontaneous emission noise and for maximum energy extraction, with single-pass small-signal gain of 59 dB. Diffraction-limited operation up to 1 kHz is possible. Conversion efficiency of 75 % at 532 nm and 40% at 266 nm was observed. View full abstract»

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  • Precompensation Techniques to Suppress the Thermally Induced Wavelength Drift in Tunable DBR Lasers

    Publication Year: 2008 , Page(s): 958 - 965
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (941 KB) |  | HTML iconHTML  

    Wavelength drift caused by thermal transients is a major problem in optical routers which use semiconductor tunable lasers for packet switching. Wavelength drift is induced by the temperature variations in laser sections caused by switching of the tuning currents. A thermal model is used to analyze the optical frequency drifts due to the thermal characteristics of the laser chip and its mount. We investigate the impact of thermal effects on switching behavior of a three-section distributed Bragg reflector laser and show numerically that the wavelength drift can be counteracted by using precompensation of passive section currents. Results from numerical simulation show that the wavelength drifts can be suppressed by more than 80%. View full abstract»

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  • Gain-Switched Pulse Response of Quantum-Well Lasers

    Publication Year: 2008 , Page(s): 966 - 975
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1048 KB) |  | HTML iconHTML  

    An analytical model is established for the gain-switched pulse response of quantum-well lasers (QWLs). The electron and photon rate equations are coupled through the dynamic variations of the laser gain represented by the stimulated lifetime in terms of the Fermi energies. The gain switching response is obtained analytically using approximate quiescent boundary conditions and a perturbation technique which enables solution of the differential equations. A theoretical sech2(t) pulse shape for the photon response is obtained analytically for the first time. The condition for obtaining identical repetitive pulses is discussed and found to be determined by both the electrical direct current (dc) bias and alternating current (ac) pulse amplitude and width. The analytical solution is shown to be excellent by comparison to a numerical solution of the standard equation. To establish the utility of the model, pulse data on vertical cavity surface emitting lasers (VCSELs) were taken and found to be well predicted within the error of the measurement. View full abstract»

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  • Theory and Simulation of Passive Multifrequency Mode-Locking With Waveguide Arrays

    Publication Year: 2008 , Page(s): 976 - 983
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (448 KB) |  | HTML iconHTML  

    The periodic application of a multinotch frequency filter in a laser cavity operating with normal or anomalous dispersion is used to achieve stable and robust multifrequency passive mode-locking. The stable mode-locking produces nonlinear bound-states which propagate at the average group-velocity of the mode-locked frequencies. An averaged model which includes the frequency filtering is also considered. This model has exact solutions for which stability can be explicitly calculated, thus rendering insight into the underlying stability properties of multifrequency mode-locking. The model suggests a promising source for multi- frequency photonic applications. View full abstract»

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  • Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

    Publication Year: 2008 , Page(s): 984 - 989
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (2056 KB) |  | HTML iconHTML  

    In this paper, we demonstrate a novel method to integrate photonic crystals (PhCs) on GaN-based blue light-emitting diodes (LEDs) using a silicon substrate as a mold for forming the PhCs. This method starts with fabricating a 2D grooved Si substrate as that mold. Subsequently, GaN-based epitaxial layers are grown on the Si mold-substrate, which effectively reduces the dislocation density in GaN by enhanced lateral epitaxial growth. After the epitaxial layers are bonded onto a highly reflective substrate, the Si mold-substrate is removed. This substrate-transfer technique replicates PhC from the mold-substrate on the LED surface free from processing damages. The resultant LEDs with PhC have outperformed the LEDs without PhC in the optical output power by 80%, taking advantage of the enhanced light extraction by PhC. View full abstract»

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  • Semiconductor Lasers [advertisement]

    Publication Year: 2008 , Page(s): 990
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    Freely Available from IEEE
  • IEEE copyright form

    Publication Year: 2008 , Page(s): 991 - 992
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    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics information for authors

    Publication Year: 2008 , Page(s): C3
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    Freely Available from IEEE
  • Blank page [back cover]

    Publication Year: 2008 , Page(s): C4
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    Freely Available from IEEE
  • [Front cover]

    Publication Year: 2008 , Page(s): C1
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    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics [publication information]

    Publication Year: 2008 , Page(s): C2
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    Freely Available from IEEE

Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University