# IEEE Microwave and Wireless Components Letters

## Filter Results

Displaying Results 1 - 25 of 27

Publication Year: 2008, Page(s):C1 - C4
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• ### IEEE Microwave and Wireless Components Letters publication information

Publication Year: 2008, Page(s): C2
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• ### An Improved Implicit Split-Step Algorithm for Dispersive Band-Limited FDTD Applications

Publication Year: 2008, Page(s):497 - 499
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An improved unconditionally stable envelope finite difference time domain (FDTD) algorithm is presented for modeling open region dispersive band-limited electromagnetic applications. The algorithm is based on incorporating the split-step implicit FDTD scheme into the stretched coordinates perfectly matched layer absorbing boundary conditions. Numerical examples carried out in 2-D domains are inclu... View full abstract»

• ### Compact Bandpass Ring Resonator Filter With Enhanced Wide-Band Rejection Characteristics Using Defected Ground Structures

Publication Year: 2008, Page(s):500 - 502
Cited by:  Papers (16)
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This letter addresses a modified bandpass ring resonator filter providing compact size, low insertion-loss, wide bandwidth, sharp rejection, and suppressed higher order modes. It is demonstrated that the use of internal folded stubs translates into an overall size reduction of more than 70% through the exploitation of the internal ring area. The introduction of defected ground structures enhances ... View full abstract»

• ### Wideband Parallel-Strip Bandpass Filter Using Phase Inverter

Publication Year: 2008, Page(s):503 - 505
Cited by:  Papers (42)
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A new wideband parallel-strip bandpass filter using phase inverter with stubs is proposed. With the wideband phase inverter in the parallel-strip line structure, the measured fractional passband bandwidth is 123% with a flat group delay response. Also, over 90% impedance bandwidth is obtained for the return loss higher than 20 dB. The theoretical simulation, electromagnetic simulation, and measure... View full abstract»

• ### Stopband-Expanded Low-Pass Filters Using Microstrip Coupled-Line Hairpin Units

Publication Year: 2008, Page(s):506 - 508
Cited by:  Papers (46)
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In this letter, a class of stopband-expanded low-pass filters (LPFs) is proposed via attenuation poles of microstrip coupled-line hairpin unit. By centrally tap-connecting this coupled-line unit and adjusting its coupling strength, three attenuation poles can be excited above the desired low passband. A coupled-line-oriented closed-form model is then constructed to provide a physical insight into ... View full abstract»

• ### Combined-Phase-Shift Waveguide Polarizer

Publication Year: 2008, Page(s):509 - 511
Cited by:  Papers (10)
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A waveguide polarizer exploiting two different phase shift phenomena is presented in this letter. Iris-type discontinuities are in fact introduced in a waveguide structure having different propagation constants for the two principal polarizations. In this way, the required 90 differential phase shift is obtained combining the iris phase shift with the waveguide one. Several operative conditions ar... View full abstract»

• ### Folded Half Mode Substrate Integrated Waveguide 3 dB Coupler

Publication Year: 2008, Page(s):512 - 514
Cited by:  Papers (51)
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In this letter, novel compact 3 dB double-slot and single-slot couplers are proposed and implemented based on folded half mode substrate integrated waveguide (FHMSIW). The size of the FHMSIW coupler is reduced by nearly 50% and 75% compared with half-mode substrate integrated waveguide coupler and substrate integrated waveguide coupler, respectively. Prototype couplers at X-band are fabricated and... View full abstract»

• ### A Novel Four-Way Ka-Band Spatial Power Combiner Based on HMSIW

Publication Year: 2008, Page(s):515 - 517
Cited by:  Papers (29)
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In this letter, a simple low-loss planar spatial power-combining architecture based on half model substrate integrated waveguide (HMSIW) is proposed and studied. The power-combining structure is realized by transition between a HMSIW and parallel multiport planar microstrip lines. The power combiner is simulated and measured at 34.5-36.5 GHz. Measured results show a good agreement with simulation ... View full abstract»

• ### Ultra-Wideband Power Divider With Good In-Band Splitting and Isolation Performances

Publication Year: 2008, Page(s):518 - 520
Cited by:  Papers (97)
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An ultra-wideband (UWB) power divider on microstrip line is proposed, analyzed and designed. This divider is formed by installing a pair of stepped-impedance open-circuited stubs and parallel-coupled lines to two symmetrical output ports. In addition, a single resistor is properly placed between two output ports. After simple transmission line theory analysis, it is demonstrated that 3 dB power sp... View full abstract»

• ### A Quad-Band Wilkinson Power Divider Using Generalized NRI Transmission Lines

Publication Year: 2008, Page(s):521 - 523
Cited by:  Papers (35)
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A quad-band Wilkinson power divider using generalized negative-refractive-index transmission-line unit cells is presented. Such a band-controllable divider would be useful in most quad-band applications as it features four distinct pass bands that can be tailored. This divider also features a deep rejection band at its center frequency that can be used for isolation and noise rejection. The theory... View full abstract»

• ### Application of Composite Right/Left Handed (CRLH) Transmission Lines based on Complementary Split Ring Resonators (CSRRs) to the Design of Dual-Band Microwave Components

Publication Year: 2008, Page(s):524 - 526
Cited by:  Papers (57)
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In this letter, composite right/left handed transmission lines based on complementary split ring resonators are applied to the design of dual-band microwave components. Specifically, impedance inverters operative at two (arbitrary) different frequencies (one of them within the left-handed band and the other within the right-handed band) are designed and applied to the implementation of a dual-band... View full abstract»

• ### CRLH Delay Line Pulse Position Modulation Transmitter

Publication Year: 2008, Page(s):527 - 529
Cited by:  Papers (20)
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A composite right/left-handed delay line pulse position modulation (PPM) transmitter is proposed. This system, compared with conventional transmitters, exhibits the advantages of simple design, continuously tunable time delay and multiple order PPM capability. It is demonstrated by circuit and experimental results for both binary and quaternary PPM. View full abstract»

• ### Temperature Dependence of High Frequency Noise Behaviors for RF MOSFETs

Publication Year: 2008, Page(s):530 - 532
Cited by:  Papers (5)
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For the first time, the temperature dependences of radio frequency (RF) metal oxide semiconductor field effect transistors' intrinsic noise currents, including the induced gate noise current (ig), channel noise current (id) and their correlation noise current, are experimentally investigated. The power spectral densities for the induced gate noise current and correlation nois... View full abstract»

• ### Linearity Improved Doherty Power Amplifier Using Composite Right/Left-Handed Transmission Lines

Publication Year: 2008, Page(s):533 - 535
Cited by:  Papers (8)  |  Patents (2)
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A Doherty power amplifier using composite right/left-handed transmission lines (CRLH-TL) is proposed for linearity improvement. The lambda/4 transmission line incorporating CRLH-TL is designed to suppress the second harmonic of the output of the main amplifier. The output power of the proposed power amplifier at the fundamental frequency (2.30 GHz) shows 31.0 dBm with 13 dBm input power excited. T... View full abstract»

• ### Unequal-Cells-Based GaN HEMT Doherty Amplifier With an Extended Efficiency Range

Publication Year: 2008, Page(s):536 - 538
Cited by:  Papers (29)
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This letter reports an extended GaN HEMT Doherty power amplifier (DPA). For high efficiency over a wide output power range, the DPA is designed using two cells with unequal saturation power (Psat). A cell with lower Psat is used as the carrier cell. For experimental validations, the carrier and peaking cells are designed and implemented with 25 W GaN HEMTs at wide-band code d... View full abstract»

• ### Highly Efficient Three-Way Saturated Doherty Amplifier With Digital Feedback Predistortion

Publication Year: 2008, Page(s):539 - 541
Cited by:  Papers (19)  |  Patents (4)
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A three-way saturated Doherty power amplifier (S-DPA) based on class-F topology is proposed to improve efficiency at large backed-off output power regions. The high efficiency is demonstrated by implementing the amplifier using Eudyna EGN010MK GaN HEMTs and testing it with a continuous wave (CW) signal and a forward-link wide-band code division multiple access (WCDMA) 1-FA signal at 2.14 GHz. The ... View full abstract»

• ### A New Sub-Millimeter Wave Power Amplifier Topology Using Large Transistors

Publication Year: 2008, Page(s):542 - 544
Cited by:  Papers (8)
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In this letter, a new power amplifier topology is demonstrated which allows the use of large (120 mum/transistors) at extremely high frequency. This is accomplished by using compact matching networks consisting of coplanar waveguide transmission lines and metal-insulator-metal capacitors to match each of the three amplifier stages. The resulting amplifier achieves a peak gain of 16.5 dB at 260 GHz... View full abstract»

• ### Nonlinear Mode Analysis and Optimization of a Triple-Push Oscillator

Publication Year: 2008, Page(s):545 - 547
Cited by:  Papers (3)  |  Patents (3)
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The triple-push oscillator architecture is an attractive application of a three element coupled oscillator array for high frequency signal generation. The desired solution to combine the power at the third harmonic and reject the first and second harmonics requires a 120 phase shift among the system elements. However, depending on the coupling strength and delay between the oscillators, the phase ... View full abstract»

• ### 94 GHz Voltage Controlled Oscillator With 5.8% Tuning Range in Bulk CMOS

Publication Year: 2008, Page(s):548 - 550
Cited by:  Papers (19)  |  Patents (1)
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A 94 GHz fundamental mode voltage controlled oscillator (VCO) is demonstrated using low leakage transistors in a 65 nm digital CMOS process with six metal layers. It achieves a tuning range of 5.8% and phase noise of -106 dBc/Hz at 10 MHz offset from a 94.9 GHz carrier. The output power varies between -4 and -8 dBm over the tuning range. The VCO draws 6 mA bias current from a 1.5 V supply and 6 mA... View full abstract»

• ### A Low-Power, High-Suppression V-band Frequency Doubler in 0.13 $mu$ m CMOS

Publication Year: 2008, Page(s):551 - 553
Cited by:  Papers (24)
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A V-band frequency doubler monolithic microwave integrated circuit with a current re-use buffer amplifier is presented. The circuit is designed and fabricated using 0.13 mum CMOS technology. The buffer amplifier uses a current re-use topology, which adopts series connection of two common source amplifiers for low dc power consumption. The suppression of the fundamental frequency is obtained by shu... View full abstract»

• ### A 30–100 GHz Wideband Sub-Harmonic Active Mixer in 90 nm CMOS Technology

Publication Year: 2008, Page(s):554 - 556
Cited by:  Papers (37)  |  Patents (1)
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This letter presents a 30-100 GHz wideband and compact fully integrated sub-harmonic Gilbert-cell mixer using 90 nm standard CMOS technology. The sub-harmonic pumped scheme with advantages of high port isolation and low local oscillation frequency operation is selected in millimeter-wave mixer design. A distributed transconductance stage and a high impedance compensation line are introduced to ach... View full abstract»

• ### A 210 GHz Dual-Gate FET Mixer MMIC With ${>}$2 dB Conversion Gain, High LO-to-RF Isolation, and Low LO-Drive Requirements

Publication Year: 2008, Page(s):557 - 559
Cited by:  Papers (7)
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We demonstrate the first active mixer monolithic microwave integrated circuit (MMIC) with positive conversion gain beyond 200 GHz. The presented dual-gate topology is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. Without any pre- or post-amplification, the down-conversion mixer achieves > 2 dB conversion gain and > 16 dB local oscillation to radio... View full abstract»

• ### LC-Tank Colpitts Injection-Locked Frequency Divider With Record Locking Range

Publication Year: 2008, Page(s):560 - 562
Cited by:  Papers (11)  |  Patents (1)
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A new wide locking range injection-locked frequency divider (ILFD) using a standard 0.18-mum CMOS process is presented. The ILFD is based on a differential voltage controlled oscillator (VCO) with two embedded injection metal oxide semiconductor field effect transistors (MOSFETs) for coupling external signal to the resonators. The new VCO is composed of two single-ended VCOs coupled with cross-cou... View full abstract»

• ### A Millimeter-Wave 90-nm CMOS Self-Mixing Frequency Divider

Publication Year: 2008, Page(s):563 - 565
Cited by:  Papers (8)
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This letter presents a millimeter-wave 90 nm CMOS divide-by-four frequency divider using self-mixing technique. The output of the push-push oscillator mixes with the input signal, and the resulting intermediate frequency signal locks the fundamental oscillation frequency of the oscillator at exactly one-fourth of the input signal frequency. The frequency divider is implemented in TSMC 90 nm 1P9M d... View full abstract»

## Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

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## Meet Our Editors

Editor in Chief
N. Scott Barker
Dept. Elect. Comp. Eng.
University of Virginia
Charlottesville, VA 22904
barker@virginia.edu
dsk6n@virginia.edu