# IEEE Transactions on Nanotechnology

## Filter Results

Displaying Results 1 - 25 of 26

Publication Year: 2008, Page(s): C1
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• ### IEEE Transactions on Nanotechnology publication information

Publication Year: 2008, Page(s): C2
| PDF (39 KB)
• ### A Nanogripper Employing Aligned Multiwall Carbon Nanotubes

Publication Year: 2008, Page(s):389 - 393
Cited by:  Papers (13)
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Nanogripper structures using aligned multiwall carbon nanotubes (MWCNTs) are demonstrated and their electromechanical properties have been studied in this paper. The balance of electrostatic force, together with elastostatic force and van der Waals force determines the driving conditions. A triode structure drastically reduces the bias between two moving parts, which consist of MWCNTs. Low bias al... View full abstract»

• ### Two-Layer Nanocoatings in Long-Period Fiber Gratings for Improved Sensitivity of Humidity Sensors

Publication Year: 2008, Page(s):394 - 400
Cited by:  Papers (29)
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A relative humidity sensor based on the deposition of electrostatic self-assembled alumina ( Al2O3) and poly(sodium 4-styrenesulfonate) on the cladding of a long-period fiber grating (LPFG) has been designed. The sensitive material has a lower refractive index than that of the fiber cladding, which limits the sensitivity of the LPFG response. In order to enhance its sensitivi... View full abstract»

• ### Scaling and Optimization of MOS Optical Modulators in Nanometer SOI Waveguides

Publication Year: 2008, Page(s):401 - 408
Cited by:  Papers (21)  |  Patents (2)
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In this paper, a very accurate model of optical modulators in silicon-on-insulator technology is developed and validated using experimental results reported in literature. Using an optimized nanometer MOS structure, a significant bandwidth increase (around 45%), length decrease (around four times), and power consumption reduction (three times) with respect to the state-of-the-art have been obtaine... View full abstract»

• ### Structural and Magnetic Properties of Amorphous and Nanocrystalline CoFeSiB Thin Films

Publication Year: 2008, Page(s):409 - 411
Cited by:  Papers (4)
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This study examined the structural, magnetic, and transport properties of CoFeSiB films with various Co compositions. The main focus was on two samples, amorphous Co74Fe4Si14B8 and nanocrystalline Co78Fe2Si12B8 thin films. The results show that the amorphous film is a typical soft magnetic material, while the n... View full abstract»

• ### Improvement of Electrical Properties of $hbox{Ba}_{{bf 0.7}}hbox{Sr}_{bf 0.3}hbox{TiO}_{bf 3}$ Capacitors With an Inserted Nano-Cr Interlayer

Publication Year: 2008, Page(s):412 - 417
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The metal-insulator-metal (MIM) capacitors were prepared with Ba0.7Sr0.3TiO3/Cr/Ba0.7Sr0.3TiO3 (BST/Cr/BST) dielectric and Pt electrode. The multilayer BST/Cr/BST was sputtered onto Pt/Ti/SiO2/Si substrate. The presence of nano-Cr interlayer affects the electrical properties of the capacitors. The temperature coefficient ... View full abstract»

• ### Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale PMOS Devices

Publication Year: 2008, Page(s):418 - 421
Cited by:  Papers (4)
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The effect of source/drain (S/D) bias on the negative bias temperature instability (NBTI) of pMOSFETs is studied. The anomalously enhanced NBTI under S/D bias conditions is observed, which cannot be explained by the conventional reaction-diffusion model. A new mechanism based on the enhanced interfacial dissociation of equivSi-H bonds induced by the energetic holes (the hole energy Eh i... View full abstract»

• ### Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure With Large Energy Band Gap Tuning

Publication Year: 2008, Page(s):422 - 426
Cited by:  Papers (3)
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Selective postgrowth band gap tuning of self-assembled InAs/InGaAs/InP quantum dot (QD) structures has been investigated. Very large band gap blueshift of over 158 meV of the InAs QD structure has been received through the intermixing by exposing the sample under argon plasma and followed by thermal annealing at 780 degC. Selective intermixing of the InAs QD structure has been studied by depositin... View full abstract»

• ### Design Consideration of Bulk FinFETs Devices With $hbox{rm n}^{+}hbox{/}^{}hbox{rm p}^{+}hbox{/}^{}hbox{rm n}^{{+}}$ Gate and $hbox{rm p}^{+}hbox{/}^{}hbox{rm n}^{{+}}$ Gate for Sub-50-nm DRAM Cell Transistors

Publication Year: 2008, Page(s):427 - 433
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In this paper, design considerations for the n+/p+/n+ gate bulk FinFET in sub-50-nm technology nodes is extensively studied through 3D device simulation. For the comparison of electrical characteristics of n+/p+/n+ gate bulk FinFET, the electrical characteristics of p+/n+ gate bulk FinFET were also studied. The... View full abstract»

• ### Effect of Process Variation on Field Emission Characteristics in Surface-Conduction Electron Emitters

Publication Year: 2008, Page(s):434 - 439
Cited by:  Papers (8)
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In this paper, we explore the effect of process variation on field emission characteristics in surface-conduction electron emitters. The structure of Pd thin-film emitter is fabricated on the substrate and the nanometer scale gap is formed by the focused ion beam technique. Different shapes of nanogaps due to the process variations are investigated by the experiment and three-dimensional Maxwell p... View full abstract»

• ### Smart Universal Multiple-Valued Logic Gates by Transferring Single Electrons

Publication Year: 2008, Page(s):440 - 450
Cited by:  Papers (4)
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This paper proposes smart universal multiple-valued (MV) logic gates by transferring single electrons (SEs). The logic gates are based on mosfet based SE turnstiles that can accurately transfer SEs with high speed at high temperature. The number of electrons transferred per cycle by the SE turnstile is a quantized function of its gate voltage, and this characteristic is fully exploit... View full abstract»

• ### Strong Spatial Dependence of Electron Velocity, Density, and Intervalley Scattering in an Asymmetric Nanodevice in the Nonlinear Transport Regime

Publication Year: 2008, Page(s):451 - 457
Cited by:  Papers (12)
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Using a 2-D ensemble Monte Carlo method, we have studied the electron transport in a self-switching device, which is a semiconductor rectifier consisting of an asymmetric nanochannel. Apart from obtaining a good agreement between the theoretical and experimental current-voltage characteristics, the focus is to study the detailed electron transport inside the nanochannel. Our simulations reveal a d... View full abstract»

• ### Enhanced Subthreshold Slopes in Large Diameter Single Wall Carbon Nanotube Field Effect Transistors

Publication Year: 2008, Page(s):458 - 462
Cited by:  Papers (13)
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The performance of single wall carbon nanotube field effect transistors (SWNT FETs) is greatly affected by the quality of its contacts. The presence of Schottky barriers imposes a strong scaling of the gate dielectric thickness. Here, we employ large diameter SWNTs in order to fabricate ohmically contacted FETs when a lower work function but higher adhesion strength metal such as Cr is used. A sub... View full abstract»

• ### Recording Physics, Design Considerations, and Fabrication of Nanoscale Bit-Patterned Media

Publication Year: 2008, Page(s):463 - 476
Cited by:  Papers (14)
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Recording physics, design considerations, and fabrication of bit-patterned magnetic medium for next generation data storage systems is presented. (Co/Pd)N magnetic multilayers are evaluated as candidates for bit-patterned medium recording layer materials for their high and easily tunable magnetic anisotropy. The optimized patterned multilayers used in this study had coercivities in exce... View full abstract»

• ### Limitations of Au Particle Nanoassembly Using Dielectrophoretic Force—A Parametric Experimental and Theoretical Study

Publication Year: 2008, Page(s):477 - 479
Cited by:  Papers (11)
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When a gold colloidal suspension is subjected to ac electric field, ldquogold pearl chainsrdquo will form due to the dielectrophoretic (DEP) force. Our latest experiments show that the formation rate of gold pearl chains, which tends to zero at high and low frequency limits and has a maximum at a narrow mid range of frequency, is dependent on the applied field frequency. This letter analyzes the f... View full abstract»

• ### Nonvolatile Memory via Spin Polaron Formation

Publication Year: 2008, Page(s):480 - 483
Cited by:  Papers (3)
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A nonvolatile memory is explored theoretically by utilizing the magnetic exchange interaction between localized holes and an adjacent ferromagnetic (FM) material. The active device consists of a buried semiconductor quantum dot (QD) and an FM insulating layer that share an interface. The hole population in the QD is controlled by particle transfer with a reservoir of itinerant holes over a permeab... View full abstract»

• ### Quantum Boolean Circuits are 1-Testable

Publication Year: 2008, Page(s):484 - 492
Cited by:  Papers (6)
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Recently, a systematic procedure was proposed to derive a minimum input quantum circuit for any given classical logic with the generalized quantum Toffoli gate, which is universal in Boolean logic. Since quantum Boolean circuits are reversible, we can apply this property to build quantum iterative logic array (QILA). QILA can be easily tested in constant time (C-testable) if stuck-at fault model i... View full abstract»

• ### Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nanotubes

Publication Year: 2008, Page(s):493 - 495
Cited by:  Papers (19)  |  Patents (3)
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Group III-V semiconductor nanotubes (SNTs) are formed when strained planar bilayers are released from the substrate. Compared to other nanotechnology building blocks, one of the main advantages of SNTs is the capability of precise positioning due to the top-down fabrication approach. In this letter, we demonstrate large-area assembly of ordered arrays of InxGa1-xAs/GaAs nanot... View full abstract»

• ### Chalcogenide-Nanowire-Based Phase Change Memory

Publication Year: 2008, Page(s):496 - 502
Cited by:  Papers (33)  |  Patents (1)
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We report fabrication of phase change random access memory (PRAM) using nanowires (NWs) of GeTe and In2Se3. NWs were grown by a vapor-liquid-solid technique and ranged from 40 to 80 nm in diameter and several micrometers long. A dynamic switching ratio (on/off ratio) of 2200 and 2 times 105 was realized for GeTe and indium selenide devices, respectively. The progra... View full abstract»

• ### The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-Emitting Diodes for Color Conversion

Publication Year: 2008, Page(s):503 - 507
Cited by:  Papers (7)
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We have demonstrated the fabrication and characterization of hybrid CdSe/ZnS quantum dot (QD)-InGaN blue LEDs. The chemically synthesized red light (lambda = 623 nm) QD solutions with different concentrations were dropped onto the blue InGaN LEDs with an emission peak of 453 nm and the turn-on voltage of 2.6 V. In this configuration, the CdSe/ZnS core/shell QDs played the role of a color-conversio... View full abstract»

• ### Engineering Multiwalled Carbon Nanotubes Inside a Transmission Electron Microscope Using Nanorobotic Manipulation

Publication Year: 2008, Page(s):508 - 517
Cited by:  Papers (18)
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This paper provides a review of recent experimental techniques developed for shell engineering individual multiwalled carbon nanotubes (MWNTs). Basic processes for the nanorobotic manipulation of MWNTs inside a transmission electron microscope are investigated. MWNTs, bamboo-structured carbon nanotubes (CNTs), Cu-filled CNTs, and CNTs with quantum dots attached are used as test structures for mani... View full abstract»

• ### Order form for reprints

Publication Year: 2008, Page(s): 518
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Publication Year: 2008, Page(s):519 - 520
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• ### IEEE Transactions on Nanotechnology Information for authors

Publication Year: 2008, Page(s): C3
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## Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.