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IEEE Microwave and Wireless Components Letters

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Displaying Results 1 - 25 of 27

Publication Year: 2008, Page(s):C1 - C4
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• IEEE Microwave and Wireless Components Letters publication information

Publication Year: 2008, Page(s): C2
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• T-Equivalent Circuit Parameters of a Variable-Length Cylindrical Post in a Rectangular Waveguide

Publication Year: 2008, Page(s):425 - 427
Cited by:  Papers (2)
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A simple expression for the series reactance of a solid variable-length cylindrical post in a rectangular waveguide is determined from an approximate field analysis. Results are shown to be in excellent agreement with experimental measurements. When used in conjunction with an existing analysis for determining the shunt reactance, it is shown that accurate results can be calculated for the complet... View full abstract»

• Terahertz 2-D Photonic Crystal Waveguides

Publication Year: 2008, Page(s):428 - 430
Cited by:  Papers (16)
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A 2-D photonic crystal waveguide with strong passbands in the THz frequency range is demonstrated. The 2-D metallic photonic crystal waveguide structure is bounded by parallel metal plates in the vertical direction and by a square lattice of metallized cylinders on the horizontal axis. The attenuation of the photonic crystal waveguide is experimentally determined and compared to the fundamental mo... View full abstract»

• Artificial Dielectric Shields forIntegrated Transmission Lines

Publication Year: 2008, Page(s):431 - 433
Cited by:  Papers (5)
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We present a novel shielding method for on-chip transmission lines built on conductive silicon substrates. The shield consists of an artificial dielectric with a very high in-plane dielectric constant, built from two patterned metal layers isolated by a very thin dielectric film. Inserted below an integrated coplanar transmission line, the artificial dielectric layer blocks the electric field of t... View full abstract»

• DGS Dual Composite Right/LeftHanded Transmission Line

Publication Year: 2008, Page(s):434 - 436
Cited by:  Papers (17)  |  Patents (1)
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The planar dual composite right/left-handed transmission line (D-CRLH TL) using a defected ground structure (DGS) and stub with rectangular patch is presented. The required series parallel resonance tank and shunt series resonance tank for the D-CRLH TL are provided by DGS and stub with rectangular patch, respectively. Its equivalent circuit is provided to analyze D-CRLH TL. The characteristics su... View full abstract»

• Broadband Via-Free Microstrip Balun Using Metamaterial Transmission Lines

Publication Year: 2008, Page(s):437 - 439
Cited by:  Papers (31)
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A novel metamaterial broadband microstrip balun design is proposed. The broadband balun consists of a pair of identical metamaterial transmission lines. In the odd mode, a virtual ground is formed between the symmetric plane. The odd mode is allowed while the even mode is rejected. No vias are required to realize the shunt inductors of the metamaterial lines, and no power divider is used. Baluns w... View full abstract»

• Compact Corporate Power DividerUsing Metamaterial NRI-TLCoupled-Line Couplers

Publication Year: 2008, Page(s):440 - 442
Cited by:  Papers (6)
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A low-loss, planar and compact metamaterial 1:4 corporate power divider design is presented. The power divider uses a cascade of three microstrip/negative-refractive-index transmission-line coupled-line couplers allowing it to be compact in the longitudinal direction. The fabricated prototype operates at 2.10 GHz and is 11.6 cm wide-designed for feeding a four-element patch antenna array. The 3 dB... View full abstract»

• Dual-Band Wilkinson Power DividerWith Shifted Output Ports

Publication Year: 2008, Page(s):443 - 445
Cited by:  Papers (12)
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A modified Wilkinson power divider structure is presented for the dual-band operation. The divider has two output ports shifted away from the isolation resistor to the middle of the divider and an open stub at the input port. The dual-band operation can be achieved over a wide range of band-ratios with the open stub advantage. View full abstract»

• An EM Tuning Procedure for Planar Filters Based on Individual Resonator Decomposition

Publication Year: 2008, Page(s):446 - 448
Cited by:  Papers (2)
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Planar filters directly implemented by design formulas yield a distorted frequency response, especially at higher frequencies, due to dispersion and discontinuities. In this letter, an electromagnetic (EM) tuning procedure based on individual resonator decomposition for a fifth order stepped impedance resonator (SIR) filter is presented. The EM simulation of the SIR filter composed by the tuned re... View full abstract»

• Electronically Reconfigurable Dual-ModeMicrostrip Open-Loop Resonator Filter

Publication Year: 2008, Page(s):449 - 451
Cited by:  Papers (38)
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A new type of reconfigurable asymmetric frequency response bandpass filter using dual-mode open-loop resonator is investigated. It explores the unique characteristic of the dual-mode open-loop resonator whose two operating modes, i.e., the even- and odd-modes do not couple. Thus, tuning the passband frequency is accomplished by merely changing the two modal frequencies proportionally, which makes ... View full abstract»

• Passive Microwave Planar Circuitsfor Arbitrary UWB Pulse Shaping

Publication Year: 2008, Page(s):452 - 454
Cited by:  Papers (23)
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We propose and demonstrate a new technique for generating customized pulse-shapes intended for use in ultrawideband (UWB) applications. The technique employs tailored microstrip lines that have been designed using an exact analytical series solution of the synthesis problem derived from the coupled mode theory. This solution permits the synthesis of waveguides and transmission lines with arbitrary... View full abstract»

• A 10–35 GHz Low Power Bulk-DrivenMixer Using 0.13 $mu$m CMOS Process

Publication Year: 2008, Page(s):455 - 457
Cited by:  Papers (17)
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10-35 GHz doubly balanced mixer using a 0.13-mum CMOS foundry process is presented in this letter. Using the bulk-driven topology, the number of transistors of the doubly balanced mixer is reduced; thus the mixer can achieve a low supply voltage and low power consumption. This bulk-driven mixer exhibits a measured conversion gain of -1 plusmn 2 dB from 10 to 35 GHz of radio frequency (RF) with a f... View full abstract»

• A New Ka-Band Doubly BalancedMixer Based on Lange Couplers

Publication Year: 2008, Page(s):458 - 460
Cited by:  Papers (8)
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A compact Ka-band doubly balanced diode mixer with new phase relationships is demonstrated. In this design, a novel configuration was employed to have good performance while keeping compact size and simple intermediate frequency (IF) extraction. It is flexible not only in layout design, but also in the reduction of IF inductance. The chip dimension is as small as 0.851.35 mm, implemented by using ... View full abstract»

• Ka-Band Substrate IntegratedWaveguide Gunn Oscillator

Publication Year: 2008, Page(s):461 - 463
Cited by:  Papers (19)
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Based on the substrate integrated waveguide (SIW) technology, a new type of Ka-band Gunn Diode Oscillator was developed. Main emphasis was placed on SIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode devices have been analyzed. This oscillator performance is characterized by a medium level out... View full abstract»

• A Differentially-Tuned Voltage ControlledOscillator Using Symmetric Transformer

Publication Year: 2008, Page(s):464 - 466
Cited by:  Papers (6)
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This letter proposes a new voltage controlled oscillator (VCO) topology that cancels common-mode noise by adoption of differential tuning varactor. To suppress common mode noise effectively, a symmetric three-coil transformer is proposed as a differential tuning resonator. The measured phase noise shows -128.7 dBc/Hz at 1 MHz offset frequency from the 1.2 GHz oscillation frequency. Over the whole ... View full abstract»

• A 0.6 V, 4.32 mW, 68 GHz Low Phase-Noise VCO With Intrinsic-Tuned Technique in 0.13 $mu$m CMOS

Publication Year: 2008, Page(s):467 - 469
Cited by:  Papers (17)
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An intrinsic-tuned, 68 GHz voltage controlled oscillator (VCO) without an extra on-chip accumulation-mode metal oxide semiconductor (MOS)-varactor is demonstrated in a standard, 0.13 mum CMOS technology. This VCO exhibits phase noises of -98.4 dBc/Hz and -115.2 dBc/Hz at 1 and 10 MHz offset, respectively, along with a tuning range of 4.5 % even under a small power consumption of 4.32 mW. Besides, ... View full abstract»

• A Low Voltage 0.35$mu$m CMOS FrequencyDivider With the Body Injection Technique

Publication Year: 2008, Page(s):470 - 472
Cited by:  Papers (23)
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This letter proposes a new CMOS injection locked frequency divider (ILFD) fabricated in a 0.35 mum CMOS process. The ILFD circuit is realized with a cross-coupled CMOS LC-tank oscillator, and the injecticon is carried out through the bodies of cross- coupled transistors. The self-oscillating ILFD is injection-locked by second-(third-) harmonic input to obtain the division order of two (three). Mea... View full abstract»

• Self-Oscillation Free 0.35 $mu$ m Si/SiGe BiCMOS X-Band Digital Frequency Divider

Publication Year: 2008, Page(s):473 - 475
Cited by:  Papers (3)
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This letter reports a digital master-slave D-type register divide-by-512 frequency divider designed in a 0.35 Si/SiGe BiCMOS technology. The 600times1200 mum2 circuit operates up to 9.5 GHz dissipating 120 mW. Self-oscillations are avoided by the use of a radio frequency carrier detector that controls the bias of the last six registers. View full abstract»

• SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

Publication Year: 2008, Page(s):476 - 478
Cited by:  Papers (13)
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We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating t... View full abstract»

• Suppression of Second and Third Harmonics Using $lambda/$4 Low-Impedance Substrate IntegratedWaveguide Bias Line in Power Amplifier

Publication Year: 2008, Page(s):479 - 481
Cited by:  Papers (16)
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In this letter, a low-impedance substrate integrated waveguide (SIW) bias line is proposed to suppress second and third harmonics in power amplifier. Such a bias line consists of a 4 low-impedance microstrip line and a shorted SIW that can operate as a radio frequency block and suppress any harmonic signals from entering the dc source. Since the frequency of the second harmonic components is lower... View full abstract»

• A DC-11.5 GHz Low-Power, Wideband Amplifier Using Splitting-Load Inductive Peaking Technique

Publication Year: 2008, Page(s):482 - 484
Cited by:  Papers (39)
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A DC-11.5 GHz low-power amplifier is developed in commercial 0.13 mum, CMOS technology. This amplifier design is based on a three-stage shunt-feedback inverter-configuration with splitting load inductive peaking technique. The peaking inductor is placed at the gate of the nMOS to compensate gain roll-off of the inverter stage and extend its operating bandwidth. This amplifier achieves a gain flatn... View full abstract»

• Highly Linear Power Tracking Doherty Amplifierfor WCDMA Repeater Applications

Publication Year: 2008, Page(s):485 - 487
Cited by:  Papers (14)  |  Patents (1)
| | PDF (414 KB) | HTML

This letter presents a highly linear power tracking Doherty power amplifier (DPA) for wide-band code division multiple access (WCDMA) repeater system. To achieve maximum linearity without extra linearization circuits, the drain bias voltages of the carrier and peaking amplifiers as well as the gate bias voltage of the peaking amplifier are adaptively controlled using the power tracking method acco... View full abstract»

• Cross Cancellation TechniqueEmploying an Error Amplifier

Publication Year: 2008, Page(s):488 - 490
Cited by:  Papers (4)
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In this letter, we propose a new distortion cancellation mechanism for a balanced power amplifier (PA) structure using the cross cancellation technique employing an error amplifier. The proposed cross cancellation balanced linear PA is implemented in the IMT-2000 ( 2.14GHz) band. With commercial PAs with a peak power of 240 W for base-station application, the proposed system shows 18.6 dB improvem... View full abstract»

• Design of Broadband Highly Linear IQ Modulator Using a 0.5$mu$m E/D-PHEMT Process for Millimeter-Wave Applications

Publication Year: 2008, Page(s):491 - 493
Cited by:  Papers (11)
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A broadband highly linear IQ modulator using a 0.5-mum enhancement/depletion-pseudomorphic high-electron mobility transistor process is presented in this letter. An innovative broadside/edge coupler is proposed to apply to the IQ modulator. The chip size is only 1times1 mm2, including radio frequency and baseband PADs. The sideband and local oscillation suppressions of the modulator are... View full abstract»

Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

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Meet Our Editors

Editor in Chief
N. Scott Barker
Dept. Elect. Comp. Eng.
University of Virginia
Charlottesville, VA 22904
barker@virginia.edu
dsk6n@virginia.edu