# IEEE Transactions on Device and Materials Reliability

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Displaying Results 1 - 25 of 31
• ### [Front cover]

Publication Year: 2008, Page(s): C1
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• ### IEEE Transactions on Device and Materials Reliability publication information

Publication Year: 2008, Page(s): C2
| PDF (35 KB)

Publication Year: 2008, Page(s):237 - 238
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• ### Introduction to the Special Issue on GaN and Related Nitride Compound Device Reliability

Publication Year: 2008, Page(s): 239
Cited by:  Papers (2)
| PDF (41 KB) | HTML
• ### Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

Publication Year: 2008, Page(s):240 - 247
Cited by:  Papers (55)
| | PDF (384 KB) | HTML

The physical mechanisms underlying RF current- collapse effects in AlGaN-GaN high-electron-mobility transistors are investigated by means of measurements and numerical device simulations. This paper suggests the following conditions: 1) both surface and buffer traps can contribute to RF current collapse through a similar physical mechanism involving capture and emission of electrons tunneling from... View full abstract»

• ### Reliability of Deep-UV Light-Emitting Diodes

Publication Year: 2008, Page(s):248 - 254
Cited by:  Papers (11)
| | PDF (276 KB) | HTML

This paper analyzes the performance and reliability of deep-ultraviolet light-emitting diodes (LEDs) on AlGaN emitting at 280 and 295 nm. By means of detailed electroluminescence characterization, we show that the optical properties of the LEDs are strongly influenced by the presence of deep-level-related radiative transitions, and we separately evaluate the contribution of each of these recombina... View full abstract»

• ### Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

Publication Year: 2008, Page(s):255 - 264
Cited by:  Papers (49)
| | PDF (434 KB) | HTML

This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/ GaN HEMTs in terms of the following: 1) thermal resistance and 2) ohmic series resistance (at low drain bias). Despite their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The e... View full abstract»

• ### High-Temperature Very Low Frequency Noise-Based Investigation of Slow Transients in AlGaN/GaN MODFETs

Publication Year: 2008, Page(s):265 - 271
Cited by:  Papers (9)
| | PDF (683 KB) | HTML

The variations of the very low frequency noise (i.e., 100 mHz to 100 kHz) and the dc characteristics of unpassivated AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with temperature from 300 to 500 K are investigated. The rise in temperature to 500 K is shown to reveal generation-recombination (G-R) noise characteristics within the 100 mHz to 1 Hz frequency range. It is experimentall... View full abstract»

• ### Aging and Stability of GaN High Electron Mobility Transistors and Light-Emitting Diodes With $hbox{TiB}_{2}$- and Ir-Based Contacts

Publication Year: 2008, Page(s):272 - 276
Cited by:  Papers (4)
| | PDF (430 KB) | HTML

There is interest in developing more stable contacts to a variety of GaN-based devices. In this paper, we give two examples of devices that show improved thermal stability when boride or Ir diffusion barriers are employed in ohmic-contact stacks. AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated with Ti/Al/X/Ti/Au source-drain ohmic (where X is or Ir) contacts and were subjected... View full abstract»

• ### The Effect of Gate-Bias Stress and Temperature on the Performance of ZnO Thin-Film Transistors

Publication Year: 2008, Page(s):277 - 282
Cited by:  Papers (22)
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The stability of ZnO thin-film transistors is investigated by using gate-bias stress. It is found that the application of positive and negative stress results in the device transfer characteristics shifting in positive and negative directions, respectively. It is postulated that this device instability is a consequence of charge trapping at or near the channel/insulator interface. In addition, the... View full abstract»

• ### Degradation Uniformity of RF-Power GaAs PHEMTs Under Electrical Stress

Publication Year: 2008, Page(s):283 - 288
Cited by:  Papers (9)
| | PDF (752 KB) | HTML

We have studied the electrical degradation of RF-power PHEMTs by means of in situ 2-D light-emission measurements. Electroluminescence originates in the recombination of holes that have been generated by impact ionization. The local light intensity, thus, maps the electric-field distribution at the drain side of the device. This allows us to probe the uniformity of electrical degradation due to el... View full abstract»

• ### Hot-Carrier-Related Increase in Drain Resistance and Its Suppression by Reducing Contaminants in InP-Based HEMTs

Publication Year: 2008, Page(s):289 - 296
Cited by:  Papers (2)
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We examined the issue of reliability of InP-based high-electron mobility transistors (HEMTs), focusing on the increase of drain resistance Rd. In investigations of the mechanism of Rd increase, we took note of contaminant incorporation and of the relations between the device lifetime and the strength of the channel electric field. In the fabrication process, reducing contamin... View full abstract»

• ### Thermal and Mechanical Analysis of High-Power LEDs With Ceramic Packages

Publication Year: 2008, Page(s):297 - 303
Cited by:  Papers (20)
| | PDF (693 KB) | HTML

In this paper, we present the thermal and mechanical analysis of high-power light-emitting diodes (LEDs) with ceramic packages. Transient thermal measurements and thermomechanical simulations were performed to study the thermal and mechanical characteristics of ceramic packages. Thermal resistances from the junction to the ambient were decreased from 79.6 to 46.7degC/W by replacing the plastic mol... View full abstract»

• ### Accelerated Life Test of High Brightness Light Emitting Diodes

Publication Year: 2008, Page(s):304 - 311
Cited by:  Papers (95)  |  Patents (2)
| | PDF (513 KB) | HTML

Short-term accelerated life test activity on high brightness light emitting diodes is reported. Two families of 1-W light-emitting diodes (LEDs) from different manufacturers were submitted to distinct stress conditions: high temperature storage without bias and high dc current test. During aging, degradation mechanisms like light output decay and electrical property worsening were detected. In par... View full abstract»

• ### Performance Degradation of High-Brightness Light Emitting Diodes Under DC and Pulsed Bias

Publication Year: 2008, Page(s):312 - 322
Cited by:  Papers (62)
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This paper presents the results of an experimental investigation of the performance of commercially available high-brightness light emitting diodes (HBLEDs). Three different families of white HBLEDs from three different manufacturers are considered. The main issues taken into account and reported in detail are the following: quality of the emitted light, impact of the driving strategy on the expec... View full abstract»

• ### A Review on the Reliability of GaN-Based LEDs

Publication Year: 2008, Page(s):323 - 331
Cited by:  Papers (140)
| | PDF (370 KB) | HTML

We review the degradation mechanisms that limit the reliability of GaN-based light-emitting diodes (LEDs). We propose a set of specific experiments, which is aimed at separately analyzing the degradation of the properties of the active layer, of the ohmic contacts and of the package/phosphor system. In particular, we show the following: 1) low-current density stress can determine the degradation o... View full abstract»

• ### Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Publication Year: 2008, Page(s):332 - 343
Cited by:  Papers (313)
| | PDF (1301 KB) | HTML

Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests are presented, which demonstrate a close correlation between failure modes and bias point. Maximum degradation was found in "semi-on" conditions, close to the maximum of hot-electron generation which was detected with the aid of electroluminescence (EL) measurements. This... View full abstract»

• ### Improved Reliability Performances of SONOS-Type Devices Using Hot-Hole Erase Method by Novel Negative FN Operations

Publication Year: 2008, Page(s):344 - 351
Cited by:  Papers (1)
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Several novel negative Fowler-Nordheim (FN) operations for hot-hole-erased SONOS-type devices are studied. By using p+-poly gate instead of n+-poly gate, gate injection is greatly suppressed, and the device shows self-convergent VT after -FN. By using this self-converging property, -FN operation can be applied to both erased and programmed states in various sequenc... View full abstract»

• ### Time-to-Breakdown Weibull Distribution of Thin Gate Oxide Subjected to Nanoscaled Constant-Voltage and Constant-Current Stresses

Publication Year: 2008, Page(s):352 - 357
Cited by:  Papers (25)
| | PDF (406 KB) | HTML

In this paper, we report, for the first time, the statistical distribution of thin-gate-oxide breakdown characterized by using conductive atomic force microscopy (C-AFM) in conjuncdion with the semiconductor parameter analyzer Agilent 4156C. Nanoscaled constant-voltage stress (CVS) and constant-current stress (CCS) were applied to the samples, and the time-to-breakdown Tbd Weibull plots were obtai... View full abstract»

• ### A New Flip-Flop-Based Transient Power Supply Clamp for ESD Protection

Publication Year: 2008, Page(s):358 - 367
Cited by:  Papers (10)
| | PDF (583 KB) | HTML

As CMOS technology is scaled, the design of a robust electrostatic-discharge (ESD) protection circuit that is transparent to the main circuit is becoming more challenging. For high- frequency applications where minimum parasitic capacitance is required, diodes along with clamps are a popular ESD protection method. The main challenge in the clamp design is to keep the clamp in "on" mode for the who... View full abstract»

• ### Propensity of Copper Dendrite Growth on Subassembly Package Components Used in Quad Flat Package

Publication Year: 2008, Page(s):368 - 374
Cited by:  Papers (7)  |  Patents (2)
| | PDF (821 KB) | HTML

Cu dendrite growth of quad flat package linked to epoxy molding compound (EMC), leadframe, and leadframe adhesive tape is comprehensively investigated. Cu dendrite grows particularly in the lead pitch smaller than les 130 mum covering with a leadframe tape, and in turn, it results in a resistive short. Such an appearance is attributed to test procedure of the precondition (30degC/60% relative humi... View full abstract»

• ### Reliability estimation for large-area solder joints using explicit modeling of damage

Publication Year: 2008, Page(s):375 - 386
Cited by:  Papers (15)
| | PDF (1035 KB) | HTML

The issues of available cyclic fatigue models in life prediction of large-area solder joints using finite-element analysis (FEA) are discussed. In this paper, a new FEA approach called successive initiation (SI) is modified and introduced in conjunction with energy partitioning (E-P) damage model to resolve some of the issues with available damage models such as geometry and scale dependency and p... View full abstract»

• ### In-Depth Electrical Analysis to Reveal the Failure Mechanisms With Nanoprobing

Publication Year: 2008, Page(s):387 - 393
Cited by:  Papers (14)
| | PDF (1188 KB) | HTML

This paper highlights the use of a localized probing technique, nanoprobing, to reveal some of the subtle defects affecting the yield of integrated circuits in the nanometer generation nodes. The tool is equipped with the capability to isolate and characterize the exact failing transistors of the malfunctioned devices. As a result, the identification process of the failure mechanisms, and hence th... View full abstract»

• ### Impact of MOSFET Gate-Oxide Reliability on CMOS Operational Amplifier in a 130-nm Low-Voltage Process

Publication Year: 2008, Page(s):394 - 405
Cited by:  Papers (6)  |  Patents (1)
| | PDF (631 KB) | HTML

The effect of the MOSFET gate-oxide reliability on operational amplifier is investigated with the two-stage and folded-cascode structures in a 130-nm low-voltage CMOS process. The test operation conditions include unity-gain buffer (close-loop) and comparator (open-loop) configurations under the dc stress, ac stress with dc offset, and large-signal transition stress. After overstress, the small-si... View full abstract»

• ### MOS Technology Drivers

Publication Year: 2008, Page(s):406 - 415
Cited by:  Papers (9)
| | PDF (1083 KB) | HTML

The semiconductor industry has entered a new revolution where connectivity, applications, and an overall pervasive market drives the need for increased circuit density, improved performance, and a decrease in power dissipation. These issues are the backbone for some of the latest silicon technology advancements, including the integration of stress-enabled transistors and advanced silicon-on-insula... View full abstract»

## Aims & Scope

IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.