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Microwave Magazine, IEEE

Issue 3 • Date June 2008

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Displaying Results 1 - 25 of 35
  • Front cover - IEEE Microwave Magazine - Front cover

    Page(s): c1
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  • Table of contents

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  • From the editor's desk: microwave measurements come home

    Page(s): 6 - 8
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  • President's column: facing grade inflation in engineering education

    Page(s): 10 - 14
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  • Enigmas, etc

    Page(s): 14
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  • The credit crunch: Part II [Wireless Investor]

    Page(s): 18 - 28
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    First Page of the Article
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  • The IMS 2008 quiz [Microwave Surfing]

    Page(s): 30 - 31
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  • Bangers and mash [Microwave Bytes]

    Page(s): 36 - 46
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  • Studies on tumor incidence in mice exposed to GSM cell-phone radiation [Health Effects]

    Page(s): 48 - 54
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    This paper studies on tumor incidence in mice exposed to GSM cell-phone radiation. The first study of lymphomas in female Emu_Pim1 transgenic mice using frequencies and modulations specific to cellular mobile phones was conducted in Australia in which the incidence was shown to be significantly higher (odds ratio, OR = 2.4) in the exposed mice (43%) than in the sham controls (22%) [M.H. Repacholi et al., 1997] following 18 months of two 30-min periods per day exposure to 900-MHz plane-wave radiation repeated at 217 Hz [signals that mimic global system for mobile communication (GSM) digital mobile phones]. View full abstract»

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  • Multiport VNA measurement

    Page(s): 56 - 69
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    This article presents some of the most recent multiport VNA measurement methodologies used to characterize these high-speed digital networks for signal integrity. There will be a discussion of the trends and measurement challenges of high-speed digital systems, followed by a presentation of the multiport VNA measurement system details, calibration, and measurement techniques, as well as some examples of interconnect device measurements. The intent here is to present some general concepts and trends for multiport VNA measurements as applied to computer system board-level interconnect structures, and not to promote any particular brand or product. View full abstract»

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  • Introduction to measurements for power transistor characterization

    Page(s): 70 - 85
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    In this article, we will introduce you to measurements for power transistor characterization: why they matter, why they are such a complicated, highly specialized field, and where we think the technology of power transistor characterization is headed. The characterization of microwave power transistors is an important and emerging field with many interesting engineering challenges. One can basically distinguish two areas: model extraction measurements and model validation measurements. To make things simple, isothermal pulsed-bias pulsed S-parameter measurements are typically used for model extraction purposes and load-pull measurements are typically used for model validation purposes. Both areas are rapidly evolving in order to keep track of new power transistor technology. The main issue with pulsed-bias pulsed S-parameter characterization is the need to apply pulses with ever-increasing amplitude (up to 200 V and 10 A) and ever-decreasing pulse width (smaller than 400 ns). The load-pull measurements can be done with a variety of setups, with active or passive approaches, and with or without handling harmonic frequencies. The challenges of load-pull system development are to offer time-domain voltage and current waveforms at the transistor terminals-an invaluable tool to provide insight in highly nonlinear transistor behavior-in addition to the capability to present low input impedances (1 Omega) and to handle high power levels (up to 100 W). View full abstract»

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  • VNA calibration

    Page(s): 86 - 99
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    The paper presents the improvements, as well as the calibration, on state-of-the-art of measurement made using vector network analysers. View full abstract»

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  • Measurement of microwave behavior in optical links

    Page(s): 100 - 120
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    The aim of this article is to give an overview of how S-parameter techniques can be used and misused to measure the "microwave behavior" of microwave photonic components and links-a field known as lightwave component analysis. Along the way, we clarify what is meant by the term "microwave behavior" when it is applied to what in effect are nonmicrowave components. We find that while it is desirable to extend the S-parameter approach to the lightwave domain, it is not as easy as we would hope. View full abstract»

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  • Multisine signals for wireless system test and design [Application Notes]

    Page(s): 122 - 138
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    Multisine signals are used in the laboratory and in the field to provide a periodic, well-characterized waveform that can simulate complex modulated radio frequency (RF) signals. In the field of wireless telecommunications, multisines are often used to provide realistic test signals that have statistics similar to various types of digitally modulated signals. It is concluded that the multisine approach is well suited for evaluating a nonlinear system excited by real communication signals. Multisine signals enable to gather important information about the in-band distortion and to excite long-term memory effects by generating baseband components. They are periodic and straightforward to characterize, making them ideal for identifying both magnitude and phase distortion during test and verification. Using multisines to simulate standard wireless system excitations and figures of merit allows for very good laboratory nonlinear distortion measurement setups. View full abstract»

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  • 1-W high linear broadband RF power amplifier with Certesian feedback for TETRA modulation [Application Notes]

    Page(s): 140 - 147
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    Designing a high-linearity, high-efficiency RF power amplifier with wide bandwidth design is a real challenge. This article explores a technique to achieve 30 dBm output power with an adjacent channel power ratio (ACPR) of more than -65 dBc for frequency range of 800-900 MHz. A three-stage gallium arsenide heterojunction bipolar transistor (GaAs HBT) RF power amplifier with Cartesian feedback in closed-loop form is the main architecture of the design. An adaptive bias technique was used in the RF power amplifier design to achieve high linearity while preserving good efficiency. View full abstract»

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  • Educational news

    Page(s): 152 - 153
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  • Attention students

    Page(s): 153
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  • Modeling and characterization of RF and microwave power FETs [book review]

    Page(s): 154 - 156
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  • Fundamentals of engineering electromagnetics[book review]

    Page(s): 156
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  • Recently published books

    Page(s): 158
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  • Member benefits: International Microwave Symposium Workshops

    Page(s): 160 - 171
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  • MTT society news: another year of great success for the IEEE Radio and Wireless Symposium and IEEE WAMICON

    Page(s): 162 - 168
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  • MP Associates inc. named as exhibition manager for IMS 2009-2011

    Page(s): 168
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  • SIRF 2009

    Page(s): 165
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Aims & Scope

IEEE Microwave Magazine is intended to serve primarily as a source of information of interest to professionals in the field of microwave theory and techniques.

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Meet Our Editors

Editor-in-Chief
John Wood
Maxim Integrated Products, Inc.

San Jose, CA      USA
john.wood@ieee.org
Phone:+1 480 577 0927