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IEEE Microwave and Wireless Components Letters

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Publication Year: 2008, Page(s): C1
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• IEEE Microwave and Wireless Components Letters publication information

Publication Year: 2008, Page(s): C2
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Publication Year: 2008, Page(s):73 - 75
Cited by:  Papers (50)
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A broadband eight-way spatial combiner using coaxial probes and radial waveguides has been proposed and designed. The simple electromagnetic modeling for the radial waveguide power divider/combiner has been developed using equivalent-circuit method. The measured 10-dB return loss and 1-dB insertion loss bandwidth of this waveguide spatial combiner are all demonstrated to be about 8 GHz. View full abstract»

• An Iterative Unconditionally Stable LOD–FDTD Method

Publication Year: 2008, Page(s):76 - 78
Cited by:  Papers (21)
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We present an iterative, unconditionally stable locally-one-dimensional (LOD) finite-difference time-domain (FDTD) method based on the use of an iterative fixed-point correction to reduce the splitting error. Numerical examples are used to illustrate the gain in accuracy of the proposed method versus the conventional LOD-FDTD method and the improved computational efficiency versus the iterative al... View full abstract»

• Wide Band Metallic Waveguide With In-Line Dielectric Rods

Publication Year: 2008, Page(s):79 - 81
Cited by:  Papers (5)
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Conventional rectangular metallic waveguides are seldom used at frequencies higher than twice the cutoff frequency because of higher mode propagation. Single-mode propagation is available for a metallic waveguide with arrayed dielectric rods at the center of the waveguide in the frequency under twice the cutoff frequency region using the TE20 mode, and in the frequency over twice the cu... View full abstract»

• A Patterned Dielectric Support Process for High Performance Passive Fabrication

Publication Year: 2008, Page(s):82 - 84
Cited by:  Papers (2)
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This letter presents a micromachining process to effectively reduce substrate loss via a structure of patterned oxide/nitride fins on a silicon substrate with a resistivity of 1 Omega-cm. Experimental results demonstrate that the insertion loss of a coplanar waveguide (CPW) deposited on the structure can be lowered to the value of 4.33 dB/cm at 40 GHz. Meanwhile, an analytical model is developed t... View full abstract»

• A Dual-Band Wilkinson Power Divider

Publication Year: 2008, Page(s):85 - 87
Cited by:  Papers (94)
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A new scheme is proposed for the dual-band operation of the Wilkinson power divider/combiner. The dual band operation is achieved by attaching two central transmission line stubs to the conventional Wilkinson divider. It has simple structure and is suitable for distributed circuit implementation. View full abstract»

• Miniature Dual-Band Filter Using Quarter Wavelength Stepped Impedance Resonators

Publication Year: 2008, Page(s):88 - 90
Cited by:  Papers (44)
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A miniature dual-band filter using quarter wavelength (lambdag/4) stepped impedance resonators (SIRs) is proposed. Short and open SIRs are coupled together to realize lower and upper passbands, respectively. Miniaturization is achieved due to the use of lambdag/4 resonators and a combline coupling structure. Two transmission zeros in a mid-stopband and one in each lower and u... View full abstract»

• Design of a Wide Stopband Microstrip Bandpass Filter With Asymmetric Resonators

Publication Year: 2008, Page(s):91 - 93
Cited by:  Papers (7)
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In this letter, a novel microstrip bandpass filter (BPF) with asymmetric resonators is presented. With the asymmetric structure and capacitively loaded coupling, a wide bandwidth with sufficient rejection level can be achieved easily. A full-wave electromagnetic simulator IE3D is used, and the prototype of the BPF is fabricated and measured. Comparisons of simulated results and experimental data a... View full abstract»

• A 3.3 mW K-Band 0.18-$mu$ m 1P6M CMOS Active Bandpass Filter Using Complementary Current-Reuse Pair

Publication Year: 2008, Page(s):94 - 96
Cited by:  Papers (9)
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This letter presents a low-power active bandpass filter (BPF) at K-band fabricated by the standard 0.18 mum 1P6M CMOS technology. The proposed filter is evolved from the conventional half-wavelength resonator filter, using the complementary-conducting-strip transmission line (CCS TL) as the half-wavelength resonator. Furthermore, the complementary MOS cross-couple pair is proposed as a form of cur... View full abstract»

• Miniaturized Dual-Mode Ring Resonator Bandpass Filter With Microstrip-to-CPW Broadside-Coupled Structure

Publication Year: 2008, Page(s):97 - 99
Cited by:  Papers (7)
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A microstrip-to-coplanar waveguide broadside-coupled section is used to replace a 34-section of the conventional dual-mode 1-ring resonator filter for circuit area miniaturization. It is believed that it is a new idea to incorporate the broadside-coupled section into a ring resonator filter for size reduction. For design purpose, some important characteristics of the broadside-coupled lines are in... View full abstract»

• Lifetime Measurements on a High-Reliability RF-MEMS Contact Switch

Publication Year: 2008, Page(s):100 - 102
Cited by:  Papers (63)  |  Patents (1)
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Radio frequency microelectromechanical systems (RF MEMS) cantilever contact switches have been tested for lifetime. The mean cycles-to-failure measured on an ensemble of switches was 430 billion switch cycles. The longest lifetime exhibited without degradation of the switch was 914 billion switch cycles. The devices were switched at 20 kHz with an incident RF frequency of 10 GHz and an incident RF... View full abstract»

• An Electronic UWB Continuously Tunable Time-Delay System With Nanosecond Delays

Publication Year: 2008, Page(s):103 - 105
Cited by:  Papers (30)
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We propose and demonstrate an electronic system achieving continuously tunable time-delays with nanosecond-scale delay excursions for ultra-wideband signals. Our demonstration system yields an adjustable delay of up to 1.6 ns for input signals spanning 3 to 7 GHz. The key component is a dispersive length of microstrip line created by etching a chirped electromagnetic bandgap structure in the condu... View full abstract»

• A Full-360$^{circ}$ Reflection-Type Phase Shifter With Constant Insertion Loss

Publication Year: 2008, Page(s):106 - 108
Cited by:  Papers (14)
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A new reflection-type phase shifter with a full 360deg relative phase shift range and constant insertion loss is presented. This feature is obtained by incorporating a new cascaded connection of varactors into the impedance-transforming quadrature coupler. The required reactance variation of a varactor can be reduced by controlling the impedance ratio of the quadrature coupler. The implemented pha... View full abstract»

• A Novel Miniature 1–22 GHz 90$^{circ}$ MMIC Phase Shifter with Microstrip Radial Stubs

Publication Year: 2008, Page(s):109 - 111
Cited by:  Papers (6)
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A novel miniature ultra wide bandwidth 90 monolithic microwave integrated circuit phase shifter with microstrip radial stubs operated from 1 to 22 GHz is presented. The phase shifter exhibits a high performance. Within the whole bandwidth from 1 to 22 GHz, the phase error of the phase shifter is less than 3deg, the return losses of the different phase shift states are more than 14 dB, the insertio... View full abstract»

• Compact CPW-MS-CPW Two-Stage pHEMT Amplifier Compatible With Flip Chip Technique in V-Band Frequencies

Publication Year: 2008, Page(s):112 - 114
Cited by:  Papers (1)
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The V-band coplanar waveguide (CPW)-microstrip line (MS)-CPW two-stage amplifier with the flip-chip bonding technique is demonstrated using 0.15 mum AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. The CPW is used at input and output ports for flip-chip assemblies and the MS transmission line is employed in the interstage to reduce chip size. This two-stage amplifier emplo... View full abstract»

• An Approximation of Volterra Series Using Delay Envelopes, Applied to Digital Predistortion of RF Power Amplifiers With Memory Effects

Publication Year: 2008, Page(s):115 - 117
Cited by:  Papers (24)
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In this letter, a new model for digital predistortion (DPD) of radio frequency power amplifiers for wide-band applications is proposed. The model is based on a spline approximation of Volterra series by considering second-order cross-terms. The advantage of the spline cross-term model is a reduction in the number of model parameters. We further reduce the model order by operating on delayed envelo... View full abstract»

• A Highly Linear Wideband CMOS Low-Noise Amplifier Based on Current Amplification for Digital TV Tuner Applications

Publication Year: 2008, Page(s):118 - 120
Cited by:  Papers (16)  |  Patents (4)
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A differential wideband low-noise amplifier (LNA) based on the current amplification scheme is presented for digital TV tuners. In order to highly improve the linearity and exploit the noise cancellation, a common-gate stage with positive current feedback is integrated in parallel with a common-source stage using the current mirror amplifier. The proposed 0.18-mum CMOS LNA exhibits a power gain of... View full abstract»

• 80-GHz Tuned Amplifier in Bulk CMOS

Publication Year: 2008, Page(s):121 - 123
Cited by:  Papers (15)
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An 80-GHz six-stage common source tuned amplifier has been demonstrated using low leakage (higher VT) NMOS transistors of a 65-nm digital CMOS process with six metal levels. It achieves power gain of 12 dB at 80 GHz with a 3-dB bandwidth of 6 GHz, noise figures (NF's) lower than 10.5 dB at frequencies between 75 and 81 GHz with the lowest NF of 9 dB. IP1 dB is -21 ... View full abstract»

• A 86 to 108 GHz Amplifier in 90 nm CMOS

Publication Year: 2008, Page(s):124 - 126
Cited by:  Papers (36)
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This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date. View full abstract»

• 5.7 GHz Gilbert I/Q Downconverter Integrated With a Passive LO Quadrature Generator and an RF Marchand Balun

Publication Year: 2008, Page(s):127 - 129
Cited by:  Papers (7)
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A 5.7 GHz downconversion mixer is demonstrated in this letter using 0.35 mum SiGe BiCMOS technology. A quarter-wavelength coupled line and two center-tapped transformers are utilized to generate differential quadrature LO signals. A miniaturized Marchand balun is placed before the common-base-configured RF input stage of each Gilbert mixer to generate balanced RF signals. All the reactive passive ... View full abstract»

• A CMOS K-Band Quadrature Generator

Publication Year: 2008, Page(s):130 - 132
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This letter presents a K-band quadrature signal generator in a standard 0.13 mu m CMOS process. The quadrature generator operates from 18 to 21 GHz. A maximum output power of -3.7 dBm (per I or Q channel) is achieved, and the down converted signal suppression is >25 dB at the operating bandwidth. A measured sideband rejection ratio >30 dB is achieved from 19 to 21 GHz, with a peak of >40 ... View full abstract»

• A 12-GHz Fully Integrated Cascode CMOS $LC$ VCO With $Q$-Enhancement Circuit

Publication Year: 2008, Page(s):133 - 135
Cited by:  Papers (28)
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A fully integrated complementary metal oxide semiconductor (CMOS) cascode LC voltage controlled oscillator (VCO) with Q-enhancement technique has been designed for high frequency and low phase noise. The symmetrical cascode architecture is implemented with negative conductance circuit for improving phase noise performance in 0.18 mum CMOS technology. The measured phase noise is -110.8 dBc/Hz at th... View full abstract»

• Low Phase-Noise and Low-Power CMOS VCO Constructed in Current-Reused Configuration

Publication Year: 2008, Page(s):136 - 138
Cited by:  Papers (19)  |  Patents (1)
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A Ku-band CMOS voltage-controlled oscillator (VCO) constructed in a modified current-reused configuration is presented in this letter. Two dc level shifters combined into two metal-insulator-metal capacitors are adopted to solve the transconductance and load mismatch problems of the conventional current-reused VCO for obtaining more symmetrical oscillation signals and lowering the phase noise of o... View full abstract»

• Integrated VCO With Up/Down Converter for Si-Based 60 GHz WPAN Applications

Publication Year: 2008, Page(s):139 - 141
Cited by:  Papers (1)
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This letter presents the design and implementation of the largest reported bandwidth of a 60 GHz up/down converter with an integrated voltage controlled oscillator (VCO) in a low-cost 0.18 mum silicon-germanium process. The up/down conversion is achieved using the 2X sub-harmonic passive mixing with anti-parallel diode pairs. A 30 GHz cross-coupled VCO is designed, optimized and integrated with th... View full abstract»

Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

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Meet Our Editors

Editor in Chief
N. Scott Barker
Dept. Elect. Comp. Eng.
University of Virginia
Charlottesville, VA 22904
barker@virginia.edu
dsk6n@virginia.edu