By Topic

Proceedings of the IEEE

Issue 2 • Feb. 2008

Filter Results

Displaying Results 1 - 20 of 20
  • [Front cover]

    Publication Year: 2008, Page(s): C1
    Request permission for commercial reuse | PDF file iconPDF (571 KB)
    Freely Available from IEEE
  • Proceedings of the IEEE publication information

    Publication Year: 2008, Page(s): C2
    Request permission for commercial reuse | PDF file iconPDF (53 KB)
    Freely Available from IEEE
  • Table of contents

    Publication Year: 2008, Page(s):193 - 194
    Request permission for commercial reuse | PDF file iconPDF (217 KB)
    Freely Available from IEEE
  • Fiber-to-the-Home (FTTH) Costs Are Now In!

    Publication Year: 2008, Page(s):195 - 197
    Cited by:  Papers (2)
    Request permission for commercial reuse | PDF file iconPDF (364 KB) | HTML iconHTML
    Freely Available from IEEE
  • A Future of Integrated Electronics: Moving Off the Roadmap

    Publication Year: 2008, Page(s):198 - 200
    Request permission for commercial reuse | PDF file iconPDF (117 KB) | HTML iconHTML
    Freely Available from IEEE
  • Carbon Nanotubes for High-Performance Electronics—Progress and Prospect

    Publication Year: 2008, Page(s):201 - 211
    Cited by:  Papers (180)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1097 KB) | HTML iconHTML

    Carbon nanotube devices offer intrinsic advantages for high-performance logic device applications. The ultrasmall body of a carbon nanotube-the tube diameter-is the key feature that should allow aggressive channel length scaling, while the intrinsic transport properties of the nanotube ensure at the same time high on-currents. In addition, the narrowness of the tube is critical to implementation o... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Nanoarchitectonics for Heterogeneous Integrated Nanosystems

    Publication Year: 2008, Page(s):212 - 229
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1572 KB) | HTML iconHTML

    Based on projections of the International Roadmap for Semiconductors (ITRS), the continued scaling of complementary metal-oxide semiconductor (CMOS) devices will face severe technical challenges. Among the most critical are power dissipation and device-level variabilities that will make circuit design very difficult. Potential device-level solutions that take advantage of new functional materials,... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Nanoelectronic and Nanophotonic Interconnect

    Publication Year: 2008, Page(s):230 - 247
    Cited by:  Papers (122)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2559 KB) | HTML iconHTML

    A significant performance limitation in integrated circuits has become the metal interconnect, which is responsible for depressing the on-chip data bandwidth while consuming an increasing percentage of power. These problems will grow as wire diameters scale down and the resistance-capacitance product of the interconnect wires increases hyperbolically, which threatens to choke off the computational... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Lithography and Other Patterning Techniques for Future Electronics

    Publication Year: 2008, Page(s):248 - 270
    Cited by:  Papers (136)  |  Patents (52)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2341 KB) | HTML iconHTML

    For all technologies, from flint arrowheads to DNA microarrays, patterning the functional material is crucial. For semiconductor integrated circuits (ICs), it is even more critical than for most technologies because enormous benefits accrue to going smaller, notably higher speed and much less energy consumed per computing function. The consensus is that ICs will continue to be manufactured until a... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies

    Publication Year: 2008, Page(s):271 - 286
    Cited by:  Papers (72)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1807 KB) | HTML iconHTML

    Indium phosphide heterojunction bipolar transistors (HBTs) find applications in very wide-band digital and mixed-signal integrated circuits (ICs). Devices fabricated in high-yield process flows at 500 nm feature size obtain 450 GHz cutoff frequencies and 5 V breakdown and enable high yield fabrication of integrated circuits having more than 3000 transistors. Laboratory devices at 250 nm feature si... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • GaN-Based RF Power Devices and Amplifiers

    Publication Year: 2008, Page(s):287 - 305
    Cited by:  Papers (511)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2190 KB) | HTML iconHTML

    The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processi... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Technologies for Cofabricating MEMS and Electronics

    Publication Year: 2008, Page(s):306 - 322
    Cited by:  Papers (138)  |  Patents (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1917 KB) | HTML iconHTML

    Microfabrication technologies initially developed for integrated electronics have been successfully applied to batch-fabricate a wide variety of micromechanical structures for sensing, actuating, or signal-processing functions such as filters. By appropriately combining the deposition, etching, and lithography steps for microelectromechanical devices with those needed for microelectronic devices, ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Analog-to-Digital Converters: Digitizing the Analog World

    Publication Year: 2008, Page(s):323 - 334
    Cited by:  Papers (41)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1077 KB) | HTML iconHTML

    Challenges in analog-to-digital (A/D) conversion for future scaled complementary metal-oxide-semiconductor (CMOS) technologies are investigated. The analysis of a figure of merit (FOM) that accounts for energy per conversion step indicates that op-amps are one of the most significant performance bottlenecks. New mixed-signal circuit architectures, which are more suitable for A/D conversion in scal... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Towards Quantum Engineering

    Publication Year: 2008, Page(s):335 - 342
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (575 KB) | HTML iconHTML

    Control of material composition at the nanometer and atomic scale dramatically increases electronic device design space due, in part, to quantum effects. New engineering tools are needed to explore this space and ensure that the best, technologically significant device designs are discovered in a most efficient manner. Using a few prototype examples, this paper describes how a methodology for synt... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Digital Circuit Design Challenges and Opportunities in the Era of Nanoscale CMOS

    Publication Year: 2008, Page(s):343 - 365
    Cited by:  Papers (68)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1248 KB) | HTML iconHTML

    Well-designed circuits are one key ldquoinsulatingrdquo layer between the increasingly unruly behavior of scaled complementary metal-oxide-semiconductor devices and the systems we seek to construct from them. As we move forward into the nanoscale regime, circuit design is burdened to ldquohiderdquo more of the problems intrinsic to deeply scaled devices. How this is being accomplished is the subje... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electrical Engineering Hall of Fame: Alfred N. Goldsmith

    Publication Year: 2008, Page(s):366 - 370
    Request permission for commercial reuse | PDF file iconPDF (755 KB) | HTML iconHTML
    Freely Available from IEEE
  • Future Special Issues/Special Sections of the Proceedings

    Publication Year: 2008, Page(s): 371
    Request permission for commercial reuse | PDF file iconPDF (66 KB)
    Freely Available from IEEE
  • Leading the field since 1884 [advertisement]

    Publication Year: 2008, Page(s): 372
    Request permission for commercial reuse | PDF file iconPDF (218 KB)
    Freely Available from IEEE
  • Put your technology leadership in writing

    Publication Year: 2008, Page(s): C3
    Request permission for commercial reuse | PDF file iconPDF (136 KB)
    Freely Available from IEEE
  • [Back cover]

    Publication Year: 2008, Page(s): C4
    Request permission for commercial reuse | PDF file iconPDF (425 KB)
    Freely Available from IEEE

Aims & Scope

The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
H. Joel Trussell
North Carolina State University