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Proceedings of the IEEE

Issue 10 • Date Oct 1992

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Displaying Results 1 - 6 of 6
  • Statistical-model-based speech enhancement systems

    Publication Year: 1992 , Page(s): 1526 - 1555
    Cited by:  Papers (95)  |  Patents (35)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2876 KB)  

    Since the statistics of the speech signal as well as of the noise are not explicitly available, and the most perceptually meaningful distortion measure is not known, model-based approaches have recently been extensively studied and applied to the three basic problems of speech enhancement: signal estimation from a given sample function of noisy speech, signal coding when only noisy speech is avail... View full abstract»

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  • Atomic layer epitaxy of III-V compounds: chemistry and applications

    Publication Year: 1992 , Page(s): 1641 - 1653
    Cited by:  Patents (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1368 KB)  

    Atomic layer epitaxy (ALE) of III-V compounds is addressed, with particular focus on ALE by chloride source gases of group III elements and hybrids of group V elements. A self-limiting growth mechanism in ALE is the most significant advantage over other epitaxial methods. To realize this mechanism, selections of source gases and the reactor gases and the reactor design are described. The chemistry... View full abstract»

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  • Eddy currents: theory and applications

    Publication Year: 1992 , Page(s): 1559 - 1589
    Cited by:  Papers (31)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2620 KB)  

    The theory and applications of eddy currents induced in conducting materials by time-varying magnetic fields are reviewed. The mathematical methods employed in solving the relevant problems are presented. Both analytical and numerical methods are described. Applications based on effects arising from eddy currents are discussed in detail. These applications are to magnetic levitation, electromagnet... View full abstract»

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  • The chemistry of the organometallic vapor-phase epitaxy of mercury cadmium telluride

    Publication Year: 1992 , Page(s): 1625 - 1640
    Cited by:  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1656 KB)  

    This review of the organometallic vapor-phase epitaxy (OMVPE) of mercury cadmium telluride examines the chemistry underlying film growth, film morphology, heteroepitaxy, doping, and reactor design. A key feature of the OMVPE of II-VI compounds, as distinguished from the OMVPE of III-V compounds, is that the intrinsic reaction kinetics control film growth. The rates of surface and gas-phase reactio... View full abstract»

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  • Recent advances in metal-organic vapor phase epitaxy

    Publication Year: 1992 , Page(s): 1609 - 1624
    Cited by:  Patents (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1764 KB)  

    Recent progress in the development and application of metal-organic vapor phase epitaxy (MOVPE) is reviewed. The formation of new and unique materials and structures, including wide-bandgap materials of both III-V and II-VI semiconductors, is discussed. The basic studies of the underlying chemistry and fluid flow behavior in MOVPE reactors and resulting improvements in the control of material prop... View full abstract»

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  • UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications

    Publication Year: 1992 , Page(s): 1592 - 1608
    Cited by:  Papers (26)  |  Patents (12)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1864 KB)  

    The fundamental chemical principles underlying ultra-high-vacuum chemical vapor deposition (UHV CVD) are described in this overview. A variety of unique devices and structures, e.g. high-speed graded-bandgap heterojunction bipolar transistors and n-type resonant tunneling diodes, are discussed. The role of fundamental interface chemistry in making such structures possible is considered View full abstract»

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North Carolina State University