Proceedings of the IEEE

Issue 9 • Sept. 2007

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Displaying Results 1 - 23 of 23
  • [Front cover]

    Publication Year: 2007, Page(s): C1
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  • Proceedings of the IEEE publication information

    Publication Year: 2007, Page(s): C2
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  • Table of contents

    Publication Year: 2007, Page(s):1713 - 1714
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  • Prospects for Growth: High-Tech Enterprises in India

    Publication Year: 2007, Page(s):1715 - 1717
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  • Special Issue on Optoelectronic Devices Based on Quantum Dots

    Publication Year: 2007, Page(s):1718 - 1722
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (154 KB) | HTML iconHTML

    The twelve articles in this special issue are devoted to optoelectronc device manufacture based on quantum dot technology. View full abstract»

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  • Quantum-Dot Optoelectronic Devices

    Publication Year: 2007, Page(s):1723 - 1740
    Cited by:  Papers (51)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1729 KB) | HTML iconHTML

    Self-organized In(Ga)As/Ga(Al)As quantum dots have emerged as useful nanostructures that can be epitaxially grown and incorporated in the active region of devices. The near pyramidal dots exhibit properties arising from the three-dimensional quantum confinement and from the coherent built-in strain. The properties and current state-of-the-art characteristics of quantum-dot junction lasers, intersu... View full abstract»

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  • High-Speed Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

    Publication Year: 2007, Page(s):1741 - 1756
    Cited by:  Papers (18)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1351 KB) | HTML iconHTML

    We report on recent progress in high-speed quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs). Advanced types of QD media allow an ultrahigh modal gain, avoid temperature depletion, and gain saturation effects. Temperature robustness up to 100degC for 0.96-1.25 mum range devices is realized in the continuous wave (cw) regime. An open eye 20 Gb/s operation with bit error rates better... View full abstract»

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  • Quantum-Dot Semiconductor Optical Amplifiers

    Publication Year: 2007, Page(s):1757 - 1766
    Cited by:  Papers (131)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1274 KB) | HTML iconHTML

    This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers developed as ultrawideband polarization-insensitive high-power amplifiers, high-speed signal regenerators, and wideband wavelength converters. A semiconductor optical amplifier having a gain of > 25 dB, noise figure of < 5 dB, and 3-dB saturation output power of > 20 dBm, over the record widest bandwidt... View full abstract»

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  • High-Speed Mode-Locked Quantum-Dot Lasers and Optical Amplifiers

    Publication Year: 2007, Page(s):1767 - 1778
    Cited by:  Papers (32)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1048 KB) | HTML iconHTML

    Recent results on GaAs-based high-speed mode-locked quantum-dot (QD) lasers and optical amplifiers with an operation wavelength centered at 1290 nm are reviewed and their complex dependence on device and operating parameters is discussed on the basis of experimental data obtained with integrated fiber-based QD device modules. Hybrid and passive mode locking of QD lasers with repetition frequencies... View full abstract»

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  • InAs/InP Quantum-Dash Lasers and Amplifiers

    Publication Year: 2007, Page(s):1779 - 1790
    Cited by:  Papers (51)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1073 KB) | HTML iconHTML

    InAs quantum-dash structures fabricated by self-assembly growth techniques and based on compound semiconductors lattice matched to InP substrates were used to realize long wavelength lasers and amplifiers for telecom applications. With this new type of laser material special properties of low-dimensional electronic systems can be utilized for device applications, which allow to realize new device ... View full abstract»

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  • InP/GaInP Quantum Dots as Single-Photon Sources for Quantum Information Processing

    Publication Year: 2007, Page(s):1791 - 1804
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1123 KB) | HTML iconHTML

    Many important realizations and proposals for applications in quantum information processing require single photons as carriers of quantum information. Here, we review different demonstrations of quantum applications using a deterministic single-photon source based on InP/GaInP quantum dots. First, the single-photon generation is described and verified by autocorrelation measurements. A modificati... View full abstract»

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  • Quantum-Dot Sources for Single Photons and Entangled Photon Pairs

    Publication Year: 2007, Page(s):1805 - 1814
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (805 KB) | HTML iconHTML

    Quantum dots show excellent promise as triggered sources of both single and polarization entangled photons for quantum information applications. Our recent progress developing nonclassical light sources with single quantum dots is presented in this paper. Following radiative emission of an exciton confined in a quantum dot, there is a finite delay before re-excitation can occur; this results in an... View full abstract»

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  • Quantum-Dot Infrared Photodetectors

    Publication Year: 2007, Page(s):1815 - 1827
    Cited by:  Papers (57)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1199 KB) | HTML iconHTML

    We present a study of a series of n-i-n InAs quantum-dot infrared photodetectors (QDIPs) with unintentionally doped active regions. Different quantum-dot capping layer materials (GaAs, InGaAs, and AlGaAs) are utilized to tune the operating wavelength and modify the QDIP performance. Normal-incidence operation with high detectivity in the mid (3-5 ) and long (8-12 ) wavelength regimes and the poten... View full abstract»

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  • High-Temperature Tunneling Quantum-Dot Intersublevel Detectors for Mid-Infrared to Terahertz Frequencies

    Publication Year: 2007, Page(s):1828 - 1837
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (991 KB) | HTML iconHTML

    Quantum-dot infrared photodetectors have emerged as attractive devices for sensing long wavelength radiation. Their principle of operation is based on absorption of radiation via intersublevel transitions in quantum dots. Multiple layers of self-organized ln(Ga)As/Ga(Al)As quantum dots are generally incorporated in the active region of these devices. Three-dimensional quantum confinement allows no... View full abstract»

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  • Quantum Dot Based Infrared Focal Plane Arrays

    Publication Year: 2007, Page(s):1838 - 1852
    Cited by:  Papers (36)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1791 KB) | HTML iconHTML

    In the past decade, there has been active research on infrared detectors based on intersubband transitions in self-assembled quantum dots (QDs). In the past two years, at least four research groups have independently demonstrated focal plane arrays based on this technology. In this paper, the progress from the first raster scanned image obtained with a QD detector to the demonstration of a 640 512... View full abstract»

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  • Visible InGaN/GaN Quantum-Dot Materials and Devices

    Publication Year: 2007, Page(s):1853 - 1865
    Cited by:  Papers (30)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (867 KB) | HTML iconHTML

    General properties of III-V nitride-based quantum dots (QDs) are presented, with a special emphasis on InGaN/GaN QDs for visible optoelectronic devices. Stranski-Krastanov GaN/AlN dots are first discussed as a prototypical system. It is shown that the optical transition energies are governed by a giant quantum-confined Stark effect, which is the consequence of the presence of a large built-in inte... View full abstract»

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  • Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications

    Publication Year: 2007, Page(s):1866 - 1883
    Cited by:  Papers (85)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1176 KB) | HTML iconHTML

    In recent years, quantum dots have been successfully grown by self-assembling processes. For optoelectronic device applications, the quantum-dot structures have advantages such as reduced phonon scattering, longer carrier lifetime, and lower detector noise due to low-dimensional confinement effect. Comparing to traditional optoelectronic III-V and other materials, self-assembled Ge quantum dots gr... View full abstract»

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  • Electrical Engineering Hall of Fame: John H. Dellinger

    Publication Year: 2007, Page(s):1884 - 1887
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    The IRE awarded its 1938 Medal of Honor to John H. Dellinger for his contributions to the development of radio measurements and standards and for his investigations of natural phenomena affecting radio waves and propagation. A review of his life and work is presented. View full abstract»

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  • Future Special Issues/Special Sections of the Proceedings

    Publication Year: 2007, Page(s):1888 - 1889
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  • Leading the field since 1884 [advertisement]

    Publication Year: 2007, Page(s): 1890
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  • IEEE copyright form

    Publication Year: 2007, Page(s):1891 - 1892
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  • Put your technology leadership in writing

    Publication Year: 2007, Page(s): C3
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  • [Back cover]

    Publication Year: 2007, Page(s): C4
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Meet Our Editors

Editor-in-Chief
H. Joel Trussell
North Carolina State University