Early Access Articles
Early Access articles are new content made available in advance of the final electronic or print versions and result from IEEE's Preprint or Rapid Post processes. Preprint articles are peer-reviewed but not fully edited. Rapid Post articles are peer-reviewed and edited but not paginated. Both these types of Early Access articles are fully citable from the moment they appear in IEEE Xplore.Filter Results
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Conduction mechanisms and breakdown characteristics of Al2O3-doped ZrO2 high-k dielectrics for 3-dimensional stacked metal-insulator-metal capacitors
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PDF (1047 KB)
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Simulation Evaluation of an Implemented Set of Complementary Bulk Built-In Current Sensors with Dynamic Storage Cell
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PDF (376 KB)
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Hamming SEC-DAED and Extended Hamming SEC-DED-TAED codes through selective shortening and bit placement
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PDF (180 KB)
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Using Statistics of Extremes for Electromigration and Time Dependent Dielectric Breakdown
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PDF (904 KB)
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System-level ESD Protection Design using On-Wafer Characterization and Transient Simulations
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PDF (434 KB)
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Analytical/Experimental Hybrid Approach Based on Spectral Power Distribution for Quantitative Degradation Analysis of Phosphor Converted LED
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PDF (702 KB)
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Inverted cone lens encapsulant with gradient surface for Ring remote phosphor structure
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PDF (565 KB)
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Comparison of Reaction-Diffusion and Atomistic Trap-based BTI Models for Logic Gates
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PDF (1317 KB)
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Reliability of Self-Assembly Vertical Interconnects in Magnetically Aligned Anisotropic Conductive Adhesive for Electronic Packaging Applications
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PDF (904 KB)
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Measurement and Analysis of Alpha-Particle-Induced Soft Errors and Multiple Cell Upsets in 10T Subthreshold SRAM
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PDF (366 KB)
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A Layout-Level Approach to Evaluate and Mitigate the Sensitive Areas of Multiple SETs in Combinational Circuits
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PDF (241 KB)
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Mode Mixity Dependence of Interfacial Fracture Toughness in Organic Electronic Structures
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PDF (1715 KB)
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Layout Consideration and Circuit Solution to Prevent EOS Failure Induced by Latchup Test in A High-Voltage Integrated Circuits
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PDF (987 KB)
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Thermo-mechanical Failure Analysis of Through-Silicon Via Interface using a Shear-Lag Model with Cohesive Zone
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PDF (1862 KB)
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Thermal-Stability Comparison of Glass and Silicone Based High-Power Phosphor–Converted White Light-Emitting Diodes under Thermal Aging
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PDF (264 KB)
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A charge transport model for interlevel SiCOH dielectric breakdown in copper interconnects and its applications
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PDF (327 KB)
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Improvement of Electrochemical Migration Resistance by Cu/Sn Inter-Metallic Compound Barrier on Cu in Printed Circuit Board
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PDF (789 KB)
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Thermal Stability of High-Power LEDs Analyzed With Efficient Non-Destructive Methodology
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PDF (552 KB)
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Bump and Underfill Effects on Thermal Behaviors of Flip-Chip LED Packages: Measurement and Modeling
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PDF (960 KB)
Aims & Scope
IEEE Transactions on Device and Materials Reliability provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture.
Meet Our Editors
Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.


