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IEEE Transactions on Nuclear Science

Issue 6  Part I • Date Dec. 1987

 This issue contains several parts.Go to:  Part II 

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  • [Front cover]

    Publication Year: 1987, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1987, Page(s): c2
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  • Table of contents

    Publication Year: 1987, Page(s):nil1 - nil4
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  • Summary of 1987 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1987, Page(s): 1121
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  • 1987 Conference Committee

    Publication Year: 1987, Page(s): 1122
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  • Session Chairmen

    Publication Year: 1987, Page(s): 1122
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  • 1987 NSREC Rocky Mountain Highlights

    Publication Year: 1987, Page(s):1123 - 1125
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  • IEEE Tutorial Short Course on Effects of Radiation on Electronic Devices

    Publication Year: 1987, Page(s):1126 - 1127
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1446 KB)

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  • 1987 Steering Committee

    Publication Year: 1987, Page(s): 1127
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  • Editorial Comments

    Publication Year: 1987, Page(s): 1128
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  • Reviewers for This Issue

    Publication Year: 1987, Page(s):1128 - 1129
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  • Outstanding Conference Paper Award 1987 IEEE Nuclear and Space Radiation Effects Conference

    Publication Year: 1987, Page(s): 1130
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  • Distinguished Poster Paper Award

    Publication Year: 1987, Page(s): 1131
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  • Nominees for 1987 Best Paper Awards

    Publication Year: 1987, Page(s): 1131
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  • Historical Notes and Recollections

    Publication Year: 1987, Page(s): 1132
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (198 KB)

    As the silver anniversary edition of the Nuclear and Space Radiation Effects Conference approaches in 1988, one can't help but pose the following trivia question for Radiation Effects Committee members to ponder: "When did we commence including space radiation effects in the title of the Conference?" Answer: Amazingly early in our long, successful run of Conferences. While the subject of space rad... View full abstract»

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  • Correlation of Particle-Induced Displacement Damage in Silicon

    Publication Year: 1987, Page(s):1133 - 1139
    Cited by:  Papers (75)
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    Correlation is made between the effects of displacement damage caused in several types of silicon bipolar transistors by protons, deuterons, helium ions, and by 1 MeV equivalent neutrons. These measurements are compared to calculations of the nonionizing energy deposition in silicon as a function of particle type and energy. Measurements were made of displacement damage factors for 2N2222A and 2N2... View full abstract»

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  • Comparison of Proton and Neutron Carrier Removal Rates

    Publication Year: 1987, Page(s):1140 - 1146
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1342 KB)

    Displacement damage induced carrier removal rates for proton irradiations in the energy range 10-175 MeV were compared to 1 MeV equivalent neutrons using power MOSFETs as a test vehicle. The results showed that, within experimental error, the degradation mechanisms were qualitatively similar and the ratio of proton to neutron carrier removal rates as a function of proton energy correlate with a ca... View full abstract»

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  • The Nature of the Deep Hole Trap in MOS Oxides

    Publication Year: 1987, Page(s):1147 - 1151
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (673 KB)

    We have investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, we have obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, our results are inconsistent with the... View full abstract»

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  • The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices

    Publication Year: 1987, Page(s):1152 - 1158
    Cited by:  Papers (42)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1893 KB)

    The role of hydrogen in the generation of radiation-induced interface-trap and oxide-trapped charge in MOS polysilicon gate capacitors has been investigated. The concentration of radiation-induced interface-trap and oxide-trapped charge measured both immediately after irradiation and after postirradiation anneal increases if high temperature anneals are performed in hydrogen. We have analyzed thes... View full abstract»

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  • Critical Evaluation of the Midgap-Voltage-Shift Method for Determining Oxide Trapped Charge in Irradiated Mos Devices

    Publication Year: 1987, Page(s):1159 - 1165
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1495 KB)

    The validity of using midgap voltage shifts to determine radiation-induced oxide trapped charge is examined using thermally stimulated current (TSC), conductance, and C-V techniques. The assumption behind the midgap technique that all interface states are amphoteric Pb centers is shown to be not generally valid. Conductance measurements revealed a donor interface state in the upper half of the ban... View full abstract»

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  • Radiation-Induced Interface Traps in Mo/SiO2/Si Capacitors

    Publication Year: 1987, Page(s):1166 - 1171
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1115 KB)

    The radiation induced interface traps in Moly-gate Metal/SiO2/Si (MOS) capacitors over a wide range of radiation doses have been investigated. The gate oxides in these samples were thermally grown in dry O2+ Trichloroethane (TCA). It has been found that: (1) high temperature (900°C) annealing in H2 after Mo deposition increases the radiation sensitivity significantly, especially for dose levels a... View full abstract»

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  • Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent Biases

    Publication Year: 1987, Page(s):1172 - 1177
    Cited by:  Papers (23)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1306 KB)

    Defect growth and annealing mechanisms in MOS devices have been studied. Biases were changed during irradiations. Significant radiation-induced annealing of trapped holes was observed. Apparent room temperature annealing of interface states was also observed. A consistent explanation of this apparent annealing is presented, i.e., an effect of LNU's on the results of the subthreshold analysis techn... View full abstract»

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  • A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors

    Publication Year: 1987, Page(s):1178 - 1183
    Cited by:  Papers (61)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1310 KB)

    The "worst-case" postirradiation response of Sandia hardened n-channel transistors following Co-60 exposure to total dose levels of system interest is demonstrated to occur for zero-volt bias during radiation, and positive bias during a subsequent anneal. This observation is explained in terms of oxide-trapped and interface-state charge buildup and anneal. Additional results are presented which su... View full abstract»

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  • Post-Irradiation Effects in Field-Oxide Isolation Structures

    Publication Year: 1987, Page(s):1184 - 1189
    Cited by:  Papers (51)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1631 KB)

    We have studied experimentally the time dependence of leakage currents in six CMOS (complementary metaloxide semiconductor) processes using LOCOS (local oxidation of silicon) isolation structures. These six process lines represent six different U. S. semiconductor companies. In their radiation response, these processes range from very hard to very soft. In the softer processes, the radiation-induc... View full abstract»

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  • Radiation Response of MOS Capacitors Containing Fluorinated Oxides

    Publication Year: 1987, Page(s):1190 - 1195
    Cited by:  Papers (29)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1239 KB)

    By introducing small amounts of fluorine into the gate oxide, we have been able to significantly alter the radiation response of Metal/SiO2/Si (MOS) capacitors, and their subsequent time dependent behavior. Experimentally we have observed that compared with their control capacitors, which have no fluorine introduced into the oxide, the fluorinated samples exhibit the following major differences: (... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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