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Nuclear Science, IEEE Transactions on

Issue 6 • Date Dec. 1982

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  • [Front cover]

    Publication Year: 1982 , Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1982 , Page(s): c2
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  • Table of contents

    Publication Year: 1982 , Page(s): 1429 - 1433
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  • 1982 NSREC Short Course on Radiation Effects and System Hardening

    Publication Year: 1982 , Page(s): 1434 - 1435
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  • Highlights of the 1982 Nuclear and Space Radiation Effects Conference

    Publication Year: 1982 , Page(s): 1436 - 1437
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  • Summary of 1982 Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1982 , Page(s): 1438
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  • Editorial Comments

    Publication Year: 1982 , Page(s): 1439
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  • IEEE Nuclear and Plasma Sciences Committee Radiation Effects Committee

    Publication Year: 1982 , Page(s): 1439
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  • 1982 Conference Committee

    Publication Year: 1982 , Page(s): 1439 - 1440
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  • Conference Reviewers

    Publication Year: 1982 , Page(s): 1440 - 1441
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  • Outstanding Conference Paper Award 1982 IEEE Conference on Nuclear and Space Radiation Effects

    Publication Year: 1982 , Page(s): 1442
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  • Distinguished Poster Paper Award 1982 IEEE Conference on Nuclear and Space Radiation Effects

    Publication Year: 1982 , Page(s): 1443
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  • Interface-State Generation in Thick SiO2 Layers

    Publication Year: 1982 , Page(s): 1445 - 1451
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1168 KB)  

    Evidence is presented that interface states are produced by radiation in some MOS structures with thick SiO2 layers (e.g., field oxides) by a mechanism different from the slow two-stage process previously identified in thinner radiation-hardened gate oxides. Production of interface states by the new process occurs promptly after irradiation, is independent of oxide field and polarity, and takes pl... View full abstract»

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  • The Characterization of Transistor Electrical Overstress Failure Probability Density Functions

    Publication Year: 1982 , Page(s): 1452 - 1458
    Cited by:  Papers (1)
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    An empirical approach for characterizing transistor emitter-base failure threshold probability density functions is presented. The data analyzed come from a program of experiments designed to test component failures due to electrical overstress transients. First, an empirical distribution is obtained which describes the variation of the relative width of a large set of measured failure threshold d... View full abstract»

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  • Radiation-Induced Paramagnetic Defects in MOS Structures

    Publication Year: 1982 , Page(s): 1459 - 1461
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (545 KB)  

    We have subjected thermally grown films of SiO2 on Si substrates to Co60 gamma irradiation. Using electron spin resonance we observe three radiation-induced paramagnetic defect centers in the structures at room temperature. One resonance appears to be unambiguously associated with trivalent silicon bonded to three other silicons at the Si/SiO2 interface. Two other resonances are very much like res... View full abstract»

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  • Radiation-Induced Defects in SiO2 as Determined with XPS

    Publication Year: 1982 , Page(s): 1462 - 1466
    Cited by:  Papers (48)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1037 KB)  

    Device quality gate oxides (~ 850 Å) grown on Si (100) substrates are irradiated with 0 - 20 eV electrons during in situ XPS measurements. These structures have been thinned stepwise to 25 to 60 Å using a relatively benign wet-chemical depth-profiling procedure. An analytical method based on oxide/substrate intensity ratios is used to deduce the product of the atomic number density (D) and the e... View full abstract»

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  • Hole Trap Creation in SiO2 by Phosphorus Ion Penetration of Polycrystalline Silicon

    Publication Year: 1982 , Page(s): 1467 - 1470
    Cited by:  Papers (13)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (855 KB)  

    Anomalously deep penetration of polycrystalline silicon by high energy phosphorus ions is shown to produce large concentrations of hole traps in MOS devices. In some cases the damage created by the implantations could not be detected in pre-irradiation characteristics. A strong dependence of hole trap concentration on implantation dose was found up to very high doses, and the effects of ion energy... View full abstract»

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  • Generation of Oxide Charge and Interface States by Ionizing Radiation and by Tunnel Injection Experiments

    Publication Year: 1982 , Page(s): 1471 - 1478
    Cited by:  Papers (18)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1426 KB)  

    Results of irradiation and high field tunnel injection experiments on MOS capacitors are discussed. The midgap voltage shift as a function of dose is caused by hole trapping only. In the case of tunnel injection, the generation of electron-hole pairs by impact ionization requires a much larger electron density and high fields. Thus a model of charge build-up is established which takes into account... View full abstract»

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  • Laser Diode-Induced Photobleaching at Low Temperatures in Co-60 Irradiated Fibers

    Publication Year: 1982 , Page(s): 1479 - 1483
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (980 KB)  

    Laser diode (820 nm)-induced photobleaching effects have been studied primarily at -55° C in a variety of fibers including polymer clad pure silica core, fluorosilicate clad pure silica core, and doped core fibers which were exposed to Co-60 irradiation with and without simultaneous CW laser light passing through the fibers. Thermal and laser-induced recovery at -55° C following irradiation was ... View full abstract»

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  • Photobleaching of Radiation-Induced Color Centers in a Germania-Doped Glass Fiber

    Publication Year: 1982 , Page(s): 1484 - 1488
    Cited by:  Papers (3)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1615 KB)  

    Experiments have been performed to measure the effects of photobleaching on radiation-induced absorption in a Corning germania-doped graded-index fiber (type 1506) held at 77 K. Fiber segments 4.6 m long were exposed to radiation pulses of approximately 280 rads(Si) and 24-ns pulsewidth while suspended in a liquid nitrogen bath. Wavelength-dependent absorption measurements and photobleaching were ... View full abstract»

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  • Metal Coated Fibers for Use in the Radiation Environment

    Publication Year: 1982 , Page(s): 1489 - 1492
    Cited by:  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1577 KB)  

    Optical fibers are being considered for uses where they will be subjected to high radiation fields and elevated temperatures simultaneously. This paper describes a fiber which is aluminum jacketed, and may hence be heated to 550°C. When heated to 550°C and subjected to 30 Krads of gamma rays from 60Co, the fiber sustained 1/10 the normal room temperature damage. Thermolumnescence testing and spe... View full abstract»

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  • The Structure of Displacement Cascades in Silicon

    Publication Year: 1982 , Page(s): 1493 - 1497
    Cited by:  Papers (12)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (772 KB)  

    We have extended the work of Mueller and Guenzer on the simulation of damage cascades in silicon. We considered the effects of modifying the energy cutoff and interparticle interaction that they used. We also examined the effect of finite temperature on channeling and of using an amorphous model for the silicon, rather than a crystalline model. An estimate of the maximum size of heavily damaged re... View full abstract»

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  • A Radiation-Hardened Accelerometer Preamplifier for 2 × 108 Rads(Si) Total Dose

    Publication Year: 1982 , Page(s): 1499 - 1507
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2055 KB)  

    The application of a radiation-hardened preamplifier used in a relief-valve monitoring system for nuclear power plants is described. Design objectives and design details are given for the preamplifier, with particular attention directed toward radiation tolerance against the postulated gamma accident dose of 2 × 108 rads(air) for nuclear power plant containment. Data presented from a semiconducto... View full abstract»

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  • Feasibility Study on the Design and Radiation Testing of Complex Functions for 2 × 108 Rads (Si)

    Publication Year: 1982 , Page(s): 1508 - 1511
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    This paper describes the design and testing of digital and analog complex functions to meet the NRC reactor-containment specification of 2 × 108 Rads (Si). The circuits described are for an underwater, radiation-tolerant television camera. View full abstract»

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  • A Systolic Radiation Monitoring System

    Publication Year: 1982 , Page(s): 1512 - 1518
    Cited by:  Papers (1)
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    This paper describes a data acquisition system for radiation monitoring which significantly improves performance over conventional systems by providing higher throughput, elimination of data skew, easier and inexpensive isolation, improved system accuracy, and compact implementation. The novel systolic data acquisition system, including systolic converter, processor and networking was developed to... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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