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IEEE Transactions on Nuclear Science

Issue 2 • Date April 1982

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Displaying Results 1 - 13 of 13
  • Table of contents

    Publication Year: 1982, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1982, Page(s): c2
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  • The Nucleus

    Publication Year: 1982, Page(s): 1045
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  • Investigation of the Radiation Resistivity of Large Scale Integrated CMOS-RAM's

    Publication Year: 1982, Page(s):1046 - 1050
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (444 KB)

    The investigations we report here were intended to show if LSI-CMOS-RAM's are able to survive the passage through the radiation belt of Jupiter during the fly-by phase of the ISPM-mission. Attempts were made to obtain samples of all the 1024 word ¿¿ 4 Bit and 2048 word ¿¿ 8 Bit RAM's currently on the market. There are still no CMOS-RAM's commercially available that survive this degree of irradiati... View full abstract»

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  • Possible Bio-Medical Applications of Antiprotons I. In-Vivo Direct Density Measurements: Radiography

    Publication Year: 1982, Page(s):1051 - 1057
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2919 KB)

    We show that antiprotons can be used to extract density at any point within a biological medium by measuring the stopping power. There are no theoretical limits to the accuracy of such a measurement, but practical ones come from data collection capabilities. In addition, radiation dosage may result in a limit of ¿¿/¿ = 10-2 when the measurements are taken within a volume of approximately 10-2 c... View full abstract»

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  • Errata

    Publication Year: 1982, Page(s): 1058
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  • Radiation Hardness on Submicron NMOS

    Publication Year: 1982, Page(s):1059 - 1061
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1990 KB)

    We have studied the radiation hardness of the submicron NMOS fabricated by electron-beam lithography. E-beam lithography is known to create neutral traps in the gate oxides of MOS devices. These traps may make the devices more sensitive to radiation. We have developed an e-beam NMOS process, and have investigated the electrical characteristics of these devices before and after various radiation do... View full abstract»

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  • Specification of Bipolar Lsi Device Input States for Latchup Testing

    Publication Year: 1982, Page(s):1062 - 1065
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (492 KB)

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  • Book on Computers in Medicine Published by IEEE

    Publication Year: 1982, Page(s): 1066
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  • Announcement the Fifth International Workshop on HgI2 Jerusalem, Israel, June 7 and 8, 1982

    Publication Year: 1982, Page(s): 1067
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  • [Advertisement]

    Publication Year: 1982, Page(s):1068 - 1068-d
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  • Information for authors

    Publication Year: 1982, Page(s): 1068e
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  • Affiliate Plan of the IEEE Nuclear and Plasma Sciences Society

    Publication Year: 1982, Page(s): 1068-f
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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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