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IEEE Transactions on Nuclear Science

Issue 6 • Date Dec. 1981

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Displaying Results 1 - 25 of 138
  • [Front cover]

    Publication Year: 1981, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1981, Page(s): c2
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  • Table of contents

    Publication Year: 1981, Page(s):3931 - 3935
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  • Photograph Highlights of the 1981 Nuclear and Space Radiation Effects Conference -- Seattle, Washington

    Publication Year: 1981, Page(s):3936 - 3937
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  • Summary of 1981 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1981, Page(s): 3938
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  • Editorial Comments

    Publication Year: 1981, Page(s): 3939
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  • IEEE Nuclear and Plasma Sciences Committee Radiation Effects Committee

    Publication Year: 1981, Page(s): 3939
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  • Conference Committee

    Publication Year: 1981, Page(s): 3940
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  • Reviewers for This Issue

    Publication Year: 1981, Page(s): 3941
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  • Outstanding Conference Paper Award 1981 IEEE Conference on Nuclear and Space Radiation Effects

    Publication Year: 1981, Page(s): 3942
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  • Distinguished Poster Paper Award 1981 IEEE Conference on Nuclear and Space Radiation Effects

    Publication Year: 1981, Page(s): 3943
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  • Cosmic Ray Induced Errors in I2L Microprocessors and Logic Devices

    Publication Year: 1981, Page(s):3945 - 3954
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1608 KB)

    Large scale integrated (LSI) devices fabricated with integrated injection logic (I2L) were studied by both heavy ion experiments asd device analysis to determine the upset threshold, the charge collection volumes and ultimately the probability for upset in the galactic cosmic ray spectrum. The devices studied, the SEP9900A, the SBP9989 and the P-Code generator were fabricated by Texas Instruments,... View full abstract»

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  • Single Event Upsets in NMOS Microprocessors

    Publication Year: 1981, Page(s):3955 - 3958
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (653 KB)

    Three advanced 16-bit NMOS microprocessors have been observed to suffer single event upset at a rate varying between one upset for every 8 × 1010 to one for every 2 × 1012 n/cm2-upset for cyclotron-produced neutrons with an average energy of 14 MeV. These rates are expected to vary, probably upward, with different types of programs. The errors are inferred to occur in memory-like components of t... View full abstract»

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  • A Prediction Model for Bipolar RAMs in a High Energy Ion/Proton Environment

    Publication Year: 1981, Page(s):3959 - 3961
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (406 KB)

    A model has been developed which predicts the relative susceptibility of bipolar RAMs to heavy ion and proton upset. During the course of evaluating this model, physical and electrical variations were also evaluated indicating that the minimum internal signal level is the primary upset susceptibility indicator. Unfortunately, all of the physical and electrical variations expected during a normal p... View full abstract»

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  • CMOS RAM Cosmic-Ray-Induced-Error-Rate Analysis

    Publication Year: 1981, Page(s):3962 - 3967
    Cited by:  Papers (34)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2839 KB)

    The methodology and results are presented for a detailed analysis to predict the galactic cosmic ray induced bit-error rate in three commercially availale CMOS RAM types. A summary of cyclotron simulation data is provided and utilization of the experimental results in the Cosmic Ray Induced Error Rate (CRIER) model is described. View full abstract»

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  • The Search for Neutron-Induced Hard Errors in VLSI Structures

    Publication Year: 1981, Page(s):3968 - 3974
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1507 KB)

    Results of analytical and experimental studies of the mechanisms of neutron effects on VLSI structures are described in this paper. The issue of whether a single neutron-produced defect cluster can produce a significant amount of permanent damage ("hard error") in a VLSI cell is addressed. Properties of average defect clusters in silicon are calculated as a function of neutron energy, including di... View full abstract»

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  • Ionization of SiO2 by Heavy Charged Particles

    Publication Year: 1981, Page(s):3975 - 3980
    Cited by:  Papers (63)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1005 KB)

    Highly ionizing heavy charged particles generate significant charge as they pass through the thin thermally grown gate oxide of a MOSFET device. The amount of charge created by an alpha particle and proton is calculated and the yield of charqes which escape initial recombination is measured. The experimental results are shown to agree with a charge recombination model where an ionization track rad... View full abstract»

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  • Soft Errors Due to Protons in the Radiation Belt

    Publication Year: 1981, Page(s):3981 - 3986
    Cited by:  Papers (43)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1094 KB)

    This paper examines the problem of soft errors in semiconductor devices caused by the protons in the radiation belts. The errors can be produced by a variety of nuclear reactions in silicon. A previous paper presented a calculation of the likelihood of some of these reactions. This information can be combined with knowledge of the proton environment in order to estimate the upset rate for various ... View full abstract»

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  • Reduction of α-particle sensitivity in dynamic semiconductor memories (16K d-RAMs) by neutron irradiation

    Publication Year: 1981, Page(s):3987 - 3993
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1051 KB)

    Trace radioactive impurities found in all semiconductor devices induce soft errors in semiconductor memories by α-particle emission. Data taken on 16K d-RAMs which have been fast neutron irradiated to fluences from 1013 to 1016 n/cm2 show that soft errors in these devices can be significantly reduced while maintaining acceptable device operation. Reduction ... View full abstract»

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  • Upset Events in Josephson Digital Devices under Alpha Particle Irradiation

    Publication Year: 1981, Page(s):3994 - 3997
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (563 KB)

    Preliminary results on the effects of 5 MeV alpha particle irradiation on the electrical characteristics of large area (approximately 60 ¿m2) Josephson Nb-amorphous Si-Nb tunnel devices indicate that these particles are effective in producing upset events when the device is operated in a switching mode. For bias currents very close to the critical current, IC, upset rates are near 0.1 per alpha. ... View full abstract»

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  • Fault Tolerant Memories for Single Particle Radiation Effects

    Publication Year: 1981, Page(s):3998 - 4003
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (933 KB)

    Fault tolerant memory mechanizations are presented in this paper which combine standard Error Detection and Correction (EDAC) techniques with unique memory electrical/spacial organizations and computer protocols which account for single particle radiation effects and significantly reduce their impact on the memory system. The mechanizations also enhance reliability and increase survivability to ma... View full abstract»

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  • Energy Spectra of Heavy Fragments from the Interaction of Protons with Communications Materials

    Publication Year: 1981, Page(s):4004 - 4006
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (477 KB)

    A Monte Carlo computer code is used to calculate the energy spectra of recoil nuclei resulting from interactions of protons with communications materials. Results are presented for 130 MeV and 1 GeV protons incident on O, Si, Ga, As, and Au. The results for 130 MeV protons on Si are compared with previous calculations and measurements. View full abstract»

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  • Proton-Induced Nuclear Reactions in Silicon

    Publication Year: 1981, Page(s):4007 - 4012
    Cited by:  Papers (46)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1047 KB)

    Measurements of the energy deposited in silicon surface-barrier detectors as a result of proton-induced nuclear reactions were carried out at the Harvard Cyclotron for protons with incident energies ranging from 50 to 158 MeV and detectors with thicknesses of 2.5, 4.2, 24.1, 100, and 200 ¿m. The number of events in which a given threshold amount of energy is deposited in a 4.2 ¿m detector varied... View full abstract»

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  • Soft Error Susceptibility of CMOS RAMS: Dependence upon Power Supply Voltage

    Publication Year: 1981, Page(s):4013 - 4016
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (786 KB)

    Two types of a delidded CMOS 1024 × 1 RAM (Harris HM 6508-RH and Sandia TA597) have been tested for susceptibility to soft bit errors caused by 150-MeV krypton ions. Bit-error susceptibility was measured as a function of bias voltage and ion beam angle with respect to the chip-face normal. Comparison of measured bit-error rates and thresholds with those computed by use of a simple device model an... View full abstract»

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  • Use of an Ion Microbeam to Study Single Event Upsets in Microcircuits

    Publication Year: 1981, Page(s):4017 - 4021
    Cited by:  Papers (36)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (986 KB)

    A beam of energetic ions has been used to study the upset sensitivity of various device elements on 16K dynamic RAMs. Small beam defining apertures, ranging in size from 2.5 micrometers in diameter to a 250 by 1100 micrometer rectangular aperture, were used to produce microbeams of protons, helium ions, and nitrogen ions, although most of the work reported here was performed using helium ions. Ups... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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