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IEEE Transactions on Nuclear Science

Issue 6  Part I • Date Dec. 1986

 This issue contains several parts.Go to:  Part II 

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  • [Front cover]

    Publication Year: 1986, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1986
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  • Table of contents

    Publication Year: 1986, Page(s):1157 - 1160
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  • Summary of 1986 IEEE Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1986, Page(s): 1161
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  • 1986 Conference Committee

    Publication Year: 1986, Page(s): 1162
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  • Session Chairmen

    Publication Year: 1986, Page(s): 1162
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  • Awards Committee

    Publication Year: 1986, Page(s): 1162
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  • Strange and Wonderful People Seen in Rhode Island

    Publication Year: 1986, Page(s):1163 - 1165
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  • IEEE Short Course Summary Radiation Effects Testing

    Publication Year: 1986, Page(s):1166 - 1167
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  • Editorial Comments

    Publication Year: 1986, Page(s): 1168
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  • IEEE Nuclear and Plasma Sciences Committee Radiation Effects Committee Steering Group

    Publication Year: 1986, Page(s): 1168
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  • Reviewers for This Issue

    Publication Year: 1986, Page(s): 1169
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  • Outstanding Conference Paper Award

    Publication Year: 1986, Page(s):1170 - 1172
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  • Distinguished Poster Paper Award

    Publication Year: 1986, Page(s): 1173
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  • In memorium: Peter H. Haas, 1921-1986

    Publication Year: 1986
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  • Personal tributes [to Pete Haas]

    Publication Year: 1986
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  • Historical notes and recollections

    Publication Year: 1986, Page(s): 1176
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  • Radiation-Induced Interface-State Generation in MOS Devices

    Publication Year: 1986, Page(s):1177 - 1184
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1446 KB)

    The time dependence of interface-state generation in metal and polysilicon gate MOS devices has been investigated. In contrast to results obtained by previous workers, we find that for metal gate devices there can be a significant "prompt" component of interface-state buildup. This prompt component is accompanied by a slow buildup of interface-states, which is still increasing at 500 sec., and is ... View full abstract»

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  • Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides

    Publication Year: 1986, Page(s):1185 - 1190
    Cited by:  Papers (49)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1192 KB)

    The creation of interface states Dit by ionizing radiation is investigated in MOS capacitors as a function of oxide thickness in the range 6-50 nm. A comparison of the thickness dependence in etchback and asgrown oxides supports the idea that the number of defects at the Si-SiO2 interface increases with oxidation time. For relatively thin oxides (tox<12 nm), the rate of increase in Dit is signific... View full abstract»

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  • Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose

    Publication Year: 1986, Page(s):1191 - 1197
    Cited by:  Papers (64)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1576 KB)

    We present the results of an investigation into the buildup of trapped positive oxide charge responsible for a negative component of radiation-induced threshold voltage shift in both hard and soft metaloxide semiconductor (MOS) gate oxides and the processes which limit this buildup. Hole-trapping effects at doses to 15 Mrad(SiO2) were examined in MOS field-effect transistors (MOSFET's) and MOS cap... View full abstract»

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  • Two Reaction Model of Interface Trap Annealing

    Publication Year: 1986, Page(s):1198 - 1202
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1096 KB)

    Interface trap anneal kinetics have been studied using capacitance - voltage measurements and rapid thermal annealing. Power law kinetics have been obtained for aluminum gate devices. Anneal kinetics have been studied as a function of oxide thickness, anneal ambient, radiation damage, substrate orientation, bulk conductivity type, and temperature. A two - reaction model is proposed to explain the ... View full abstract»

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  • Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing

    Publication Year: 1986, Page(s):1203 - 1209
    Cited by:  Papers (127)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1633 KB)

    Accurate predictions of the post-irradiation response of microelectronic circuits is an important and difficult problem. We present a tunneling model for MOS structures showing how the post-irradiation annealing deviates from a simple ln(t) dependence for a nonuniform spatial trap distribution. This model is applied to our measurements of post-irradiation response to extract spatial trap distribut... View full abstract»

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  • Mechanical Stress Dependence of Radiation Effects in MOS Structures

    Publication Year: 1986, Page(s):1210 - 1215
    Cited by:  Papers (26)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1071 KB)

    The effects of mechanical stress on radiation damage in polycide-gate MOS capacitors have been investigated as a function of gate-oxide thickness and silicide-gate electrode material (TiSi2, MoSi2 and WSi2). It was found that compressive stress on the SiO2/Si interfacial region reduces both positive charge build-up and interface-trap generation. The positive charge build-up exhibits a smaller stre... View full abstract»

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  • Radiation Effects of Double Layer Dielectric Films

    Publication Year: 1986, Page(s):1216 - 1222
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (950 KB)

    Double layer dielectric films are examined for Si surface passivation in a radiation hardened Si device. The double layer dielectric films of Si3N4/SiO2 and PSG/SiO2 are shown to have lower sensitivity to ionizing radiation than a CVD-SiO2/SiO2 film named a double layer SiO2 film. However, the former two dielectric films show much larger initial interface state densities than the latter one. Effec... View full abstract»

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  • Rapid-Thermal Nitridation of SiO2 for Radiation-Hardened MOS Gate Dielectrics

    Publication Year: 1986, Page(s):1223 - 1227
    Cited by:  Papers (8)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (702 KB)

    Nitridation of thin SiO2 layers has been achieved by a rapid thermal process in the presence of ammonia. The pre-and post-radiation performances of transistors with nitridated gate insulators have been presented. Nitridation causes a lowering of threshold voltage and channel mobility. Total dose testing indicates that nitridated gate oxides, under certain conditions, produce lower threshold voltag... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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