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IEEE Transactions on Nuclear Science

Issue 6 • Dec. 1983

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Displaying Results 1 - 25 of 123
  • [Front cover]

    Publication Year: 1983, Page(s): c1
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  • IEEE Transactions on Nuclear Science

    Publication Year: 1983, Page(s): c2
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  • Table of contents

    Publication Year: 1983, Page(s):4025 - 4029
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  • Summary of 1983 Annual Conference on Nuclear and Space Radiation Effects

    Publication Year: 1983, Page(s): 4030
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  • IEEE Nuclear and Space Radiation Effects Conference Short Course

    Publication Year: 1983, Page(s):4031 - 4034
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  • Editorial Comments

    Publication Year: 1983, Page(s): 4035
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  • IEEE Nuclear and Plasma Sciences Committee Radiation Effects Committee

    Publication Year: 1983, Page(s): 4035
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  • List of Reviewers - 1983 IEEE Papers

    Publication Year: 1983, Page(s): 4036
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  • 1983 Conference Committee

    Publication Year: 1983, Page(s): 4037
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  • Outstanding Conference Paper Award 1983 IEEE Conference on Nuclear and Space Radiation Effects

    Publication Year: 1983, Page(s): 4038
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  • Distinguished Poster Paper Award 1983 IEEE Conference on Nuclear and Space Radiation Effects

    Publication Year: 1983, Page(s): 4039
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  • Reflections on Twenty Years of the NSRE Conference

    Publication Year: 1983, Page(s):4040 - 4048
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (6572 KB)

    The NSRE conference has become an outstanding forum for the exchange of nuclear and space radiation effects information. This paper is a written version of an invited talk that treated some of the social and technical history of the conference. View full abstract»

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  • Hole Trapping, Recombination and Space Charge in Irradiated Sandia Oxides

    Publication Year: 1983, Page(s):4049 - 4053
    Cited by:  Papers (9)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1155 KB)

    A computer model for calculating radiation effects in MOS oxides is presented. Good agreement is obtained between theory and photoconductivity experiments (photo-current and flat band shift as a function of total dose) on Sandia radiation hard oxides. It is also shown that doses above 108 rads (delivered by a focused electron beam) are required to produce a significant number of new defect traps. View full abstract»

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  • Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation

    Publication Year: 1983, Page(s):4054 - 4058
    Cited by:  Papers (70)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (964 KB)

    The effect of gate oxidation temperature on radiation-induced flatband and threshold voltage shifts and interface state buildup for steady-state Co60 irradiation have been studied for poly-Si gate MOS capacitors with pyrogenic and dry gate oxides. The smallest radiation-induced flatband and threshold voltage shifts can be achieved with a pyrogenic oxide grown at 850°C. Total dose effects, applied... View full abstract»

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  • Thermal Annealing of Radiation Induced Defects: A Diffusion-Limited Process?

    Publication Year: 1983, Page(s):4059 - 4063
    Cited by:  Papers (25)
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    Annealing of defects in bulk fused silicas suggests the rate-limiting step is diffusion of molecular species. Evidence that similar processes occur in MOS devices is presented. A systematic dependence on gate size is shown. View full abstract»

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  • Thermally Stimulated Current Measurements on Irradiated MOS Capacitors

    Publication Year: 1983, Page(s):4064 - 4070
    Cited by:  Papers (30)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1385 KB)

    Thermally stimulated current and high frequency C-V measurements have been used to study the properties of hole traps near the Si-SiO2 interface in irradiated silicon MOS capacitors. Pre-irradiation bias-temperature (BT) instabilities, both for negative and positive bias, were observed in non-ion-contaminated samples. The activation energy for BT instabilities for both polarities is ~1.0 eV indepe... View full abstract»

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  • Conduction Processes in Kapton H Irradiated by an Electron Beam

    Publication Year: 1983, Page(s):4071 - 4076
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (886 KB)

    Current conduction in Kapton H films irradiated by a non-penetrating electron beam was studied by comparing the observed current-voltage characteristics with theoretical models. The functional dependence of the current on the electric field was found to be in relatively good agreement with the dependence predicted by the Poole-Frenkel conduction and Schottkey emission model. A beam energy dependen... View full abstract»

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  • The Development of a Radiation Hardened Polymer Dielectric by Chemical Doping

    Publication Year: 1983, Page(s):4077 - 4080
    Cited by:  Papers (5)
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  • Correlation Study of Energetic Ion Induced Optical Absorption and Thermoluminescence in Crystalline LiF and CaF2

    Publication Year: 1983, Page(s):4081 - 4086
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (922 KB)

    The parallel effect of step-wise annealing on induced absorption and thermoluminescence in crystalline LiF and CaF2 irradiated with gamma rays and He+ ions is investigated. The thermoluminescence centers are found to correlate to the entire absorption spectrum rather than to isolated bands. The results also indicate a preferential production of centers of higher thermal stability by the energetic ... View full abstract»

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  • Damage Ranges for Implanted Hydrogen Isotopes in Gallium Arsenide

    Publication Year: 1983, Page(s):4087 - 4089
    Cited by:  Papers (2)
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    Gallium Arsenide has been bombarded with protons and deuterons at a range of energies up to 1MeV. The depth of maximum damage was measured by a cleave and etch method, and was compared with calculated ranges. While proton damage ranges are well in accord with theory and previous reports, deuteron penetration was greater than expected, and not greatly less than for protons. Some results for tritons... View full abstract»

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  • Simulated Space Radiation Effects on Dielectrics and Coatings

    Publication Year: 1983, Page(s):4090 - 4093
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    Simulation tests of space radiation have been performed for specific organic and inorganic materials. The test results for fifteen materials exposed to protons and five exposed to electrons are presented. View full abstract»

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  • Characterization of Annealing of Co60 Gamma-Ray Damage at the Si/Si02 Interface

    Publication Year: 1983, Page(s):4094 - 4099
    Cited by:  Papers (40)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (776 KB)

    The annealing of Co60 gamma-ray damage at the Si/SiO2 interface is a well behaved phenomenon. Based on the characterization of annealing over a temperature range of 25° to 300°C, a physical model is developed. This model suggests that the annealing of the radiation damage occurs in two phases: first, the Qf-like trapped positive charges are converted to acceptor-like fast-states, and second, the... View full abstract»

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  • Irradiated Silicon Gate MOS Device Bias Annealing

    Publication Year: 1983, Page(s):4100 - 4104
    Cited by:  Papers (39)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (858 KB)

    N-channel silicon gate MOS transistors exhibit positive threshold shifts when bias annealed following ionizing irradiation exposure. The threshold shift is probably due to electrons tunneling into the oxide and recombining at trapping centers near the Si/Sio2 interface. The threshold shifts are large enough in some cases to cause functional failures of MOS integrated circuits. View full abstract»

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  • Gamma Total Dose Effects on ALS Bipolar Oxide Sidewall Isolated Devices

    Publication Year: 1983, Page(s):4105 - 4109
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1400 KB)

    Advances in bi-polar technology that increase device performance through the use of oxide sidewall isolation have revived concerns about total dose radiation effects. Extensive Cobalt 60 tests of Texas Instruments ALS devices were conducted and comparative results of "walled" and "nested" emitter devices are included. It was determined that inversion at the Si-SiO2 interface between the isolation ... View full abstract»

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  • Devlopement of a Radiation Hard N-Channel Power MOSFET

    Publication Year: 1983, Page(s):4110 - 4115
    Cited by:  Papers (12)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (940 KB)

    Radiation-hard N-channel power MOSFETs have been manufactured using a "reverse sequence" silicon gate process in which drive-ins and anneals are completed before gate oxidation to minimise subsequent high temperature treatments. Results with initial runs in which a number of process steps were varied confirm that gate threshold shift is affected not only by gate oxidation conditions, but by subseq... View full abstract»

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Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
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